Table Of ContentVOLUMEONEHUNDRED ANDSEVEN
SEMICONDUCTORS
AND SEMIMETALS
Ultrawide Bandgap Semiconductors
SERIES EDITORS
CHENNUPATI JAGADISH
Distinguished Professor
Department ofElectronic Materials Engineering
Research Schoolof Physicsand Engineering
Australian National University
Canberra,ACT2601, Australia
ZETIAN MI
Professor
Department ofElectrical Engineering andComputer Science
University ofMichigan
1310Beal Avenue
AnnArbor, MI 48109
United Statesof America
VOLUMEONEHUNDRED ANDSEVEN
SEMICONDUCTORS
AND SEMIMETALS
Ultrawide Bandgap Semiconductors
Edited by
YUJI ZHAO
School of Electrical, Computer, and Energy Engineering,
Arizona State University,
Tempe, AZ, United States
ZETIAN MI
DepartmentofElectricalEngineeringandComputerScience,
University of Michigan,
Ann Arbor, MI, United States
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Contents
Contributors ix
Preface xiii
1. Fundamental technologies for gallium oxide transistors 1
MasatakaHigashiwaki
1. Introduction 1
2. LateralFET 3
3. VerticalFET 13
4. Conclusion 18
References 19
2. Advanced concepts in Ga O power and RFdevices 23
2 3
Wenshen Li,DebdeepJena, and HuiliGrace Xing
1. AdvantageofGa O forpowerandRFdevices 23
2 3
2. Practicalmaximumsurfaceelectricfield 25
3. Advanceddeviceconcept1:HighbarrierheightSchottkyjunctions 30
4. Advanceddeviceconcept2:RESURFviatrenchstructures 33
5. Summary 44
References 45
3. β-(Al Ga ) O epitaxial growth,doping andtransport 49
x (12x)2 3
NidhinKurian Kalarickaland SiddharthRajan
1. Thermodynamicsof(AlxGa(1(cid:1)x))2O3 50
2. Molecularbeamepitaxyofβ-(Alx,Ga(1(cid:1)x))2O3 51
3. Metalorganicchemicalvapordepositionof(Al,Ga) O 56
2 3
4. Dopingandtransportin(Alx,Ga(1(cid:1)x))2O3 60
5. Dopingandtransportin(Alx,Ga(1(cid:1)x))2O3/β-Ga2O3heterostructures 61
6. Outlookforfuturework 71
References 72
4. Thermal science andengineering of β-Ga O materials
2 3
anddevices 77
ZheCheng, Jingjing Shi, ChaoYuan,Samuel Kim, andSamuel Graham
1. Crystalstructureandthermalconductivityofbulkβ-Ga O 77
2 3
2. Thermalconductivityofβ-Ga O nanostructures 82
2 3
v
vi Contents
3. Heterogeneousintegrationwithdiamond 85
4. Waferbondingofmonocrystallineβ-Ga O onSiC 89
2 3
5. Device-levelcooling 90
References 96
5. Controlling different phases ofgallium oxide for solar-blind
photodetector application 101
Xiaolong Zhao,MengfanDing, HaidingSun, andShibing Long
1. GrowthofGa O polymorphs 101
2 3
2. PhotodetectorsbasedondifferentGa O polymorphs 113
2 3
3. Ga O photodetectorsbasedoncompositestructure 130
2 3
4. Summary 141
Reference 141
6. Nanoscale AlGaN andBN:Molecularbeamepitaxy, properties,
anddevice applications 153
YuanpengWu, PingWang, Emmanouil Kioupakis, andZetian Mi
1. Introduction 153
2. Epitaxyandcharacterization 155
3. Opticalandexcitonicproperties 166
4. Deviceapplications 171
5. Conclusion 184
Acknowledgments 185
Conflictofinterest 185
References 185
7. High-Al-content heterostructures anddevices 191
RobertKaplar,AlbertBaca,EricaDouglas,BriannaKlein,AndrewAllerman,
MaryCrawford, and ShahedReza
1. Introduction 191
2. PowerswitchingandRFfigures-of-merit 193
3. High-Al-contentAlGaNHEMTsforpowerswitching 196
4. High-Al-contentAlGaNHEMTsforradio-frequencyamplifiers 202
5. Processingandfabricationchallengesforhigh-Al-contentAlGaN
heterostructures 208
6. Summary 217
Acknowledgments 217
References 217
Contents vii
8. AlN nonlinear optics and integrated photonics 223
XianwenLiu, Alexander W.Bruch, andHong. X. Tang
1. Introduction 223
2. Quadraticnonlinearity 228
3. Cubicnonlinearity 246
4. Simultaneouslyquadraticandcubicnonlinearities 261
5. Conclusionandprospects 273
References 274
9. Materialepitaxyof AlN thin films 283
ShangfengLiu and Xinqiang Wang
1. Introduction 283
2. SubstrateselectionforAlNfilmgrowth 285
3. Growthtechniques 293
4. GrowthprocessesforhighcrystallinequalityAlN 299
5. Conclusionandoutlook 306
References 307
10. Development of AlN integratedphotonic platform for octave-
spanningsupercontinuum generation in visible spectrum 313
HongChen, JinganZhou, Houqiang Fu,and YujiZhao
1. Introduction 313
2. Materialcharacterizationsanddevicefabrication 315
3. Numericalmodelingonthewaveguideperformance 322
4. Octave-spanningsupercontinuumgenerationfromAlNwaveguides 329
5. Otheremergingapplicationsandplatforms 338
6. Conclusion 340
Acknowledgment 340
Conflictofinterest 341
References 341
11. AlGaN-based thin-film ultraviolet laser diodes
and light-emitting diodes 345
Haiding Sun,FengWu, JiangnanDai, andChangqing Chen
1. Introductionandsignificanceofultravioletlaserdiodesandlight-emitting
diodes 345
2. State-of-the-artofultravioletlaserdiodes 347
3. State-of-the-artofDUVLEDs 357
References 385
viii Contents
12. Electrical transportproperties of hexagonalboronnitride
epilayers 393
SamuelGrenadier,AvisekMaity,JingLi,JingyuLin,andHongxingJiang
1. Introduction 394
2. Prospectsofn-andp-typedopingofh-BN 400
3. Criteriaofh-BNasthermalneutrondetectormaterials 409
4. Verticalelectricaltransportpropertiesandparameters 420
5. Lateralelectricaltransportpropertiesandparameters 430
6. Dominantnativeandpointdefectsinh-BN 440
7. Concludingremarks 447
Acknowledgments 448
References 448
Index 455
Contributors
AndrewAllerman
SandiaNationalLaboratories,Albuquerque,NM,UnitedStates
AlbertBaca
SandiaNationalLaboratories,Albuquerque,NM,UnitedStates
AlexanderW.Bruch
YaleUniversity,NewHaven,CT,UnitedStates
ChangqingChen
WuhanNationalLaboratoryforOptoelectronics,HuazhongUniversityofScienceand
Technology,Wuhan,People’sRepublicofChina
HongChen
SchoolofElectrical,Computer,andEnergyEngineering,ArizonaStateUniversity,Tempe,
AZ,UnitedStates;NINTdepartment,MaxPlanckInstituteofMicrostructurePhysics,
Halle,Germany
ZheCheng
GeorgeW.WoodruffSchoolofMechanicalEngineering,GeorgiaInstituteofTechnology,
Atlanta,GA,UnitedStates
MaryCrawford
SandiaNationalLaboratories,Albuquerque,NM,UnitedStates
JiangnanDai
WuhanNationalLaboratoryforOptoelectronics,HuazhongUniversityofScienceand
Technology,Wuhan,People’sRepublicofChina
MengfanDing
UniversityofScienceandTechnologyofChina(USTC),Hefei,Anhui,China
EricaDouglas
SandiaNationalLaboratories,Albuquerque,NM,UnitedStates
HouqiangFu
SchoolofElectrical,Computer,andEnergyEngineering,ArizonaStateUniversity,Tempe,
AZ;DepartmentofElectricalandComputerEngineering,IowaStateUniversity,Ames,IA,
UnitedStates
SamuelGraham
GeorgeW.WoodruffSchoolofMechanicalEngineering;SchoolofMaterialsScienceand
Engineering,GeorgiaInstituteofTechnology,Atlanta,GA,UnitedStates
SamuelGrenadier
DepartmentofElectricalandComputerEngineering,TexasTechUniversity,Lubbock,TX,
UnitedStates
MasatakaHigashiwaki
NationalInstituteofInformationandCommunicationsTechnology,Koganei,Tokyo,Japan
ix
