Strippers

178 Pages·2013·13.41 MB·English

Volume 19 Issue 6 2013 @compoundsemi www.compoundsemiconductor.net
Better electron
blocking in UV LEDs
Bismuth promises
ultra-cool lasers
In-situ monitoring
aids cell growth
Full-colour lamps
with violet LEDs
Strippers
Combining speed with
green credentials
A third way for
MOCVD design
News Review, News Analysis, Features, Research Review and much more.
Free Weekly E News round up , go to www.compoundsemiconductor.net
Front Cover CS v3RS.indd 1 28/08/2013 15:47
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AIXTRON SE · [email protected] · www.aixtron.com
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editorial view
by Dr Richard Stevenson, Editor
Transforming telecom lasers
THERE ARE MANY PATHS you can go down when striving to
improve device performance.
One option is to keep it simple and try to improve the quality
of the production processes, such as optimising the growth of
the epiwafer. This can pay dividends, particularly if the class of
device is not well established.
If you are up for more of a challenge, you can try to boost
performance by altering chip design. Such an effort, which can
be supported by simulations, could involve modifying the device
architecture, such as increasing the doping in one layer.
But by far the most radical route is to dispense with a mature
material system, and adopt one that is yet to be tried and
tested. That’s what a team of European researchers is doing,
developing telecom lasers based on bismuth alloys, rather than
InP. This effort has had to start from scratch, developing models 10 percent. The promise of telecom lasers that are free from
to understand device behaviour and establishing appropriate cooling is incredibly appealing. It’s not just the potential to cut
growth conditions before it is even possible to try and fabricate costs by eliminating the need for coolers – it’s the substantial
the first devices (see feature on p53 for details). energy savings that could result.
The rewards for these trailblazing researchers could be huge. That’s because internet traffic is rocketing, due to uptake of
InP laser efficiency is impaired by Auger recombination, and smartphones and internet TV, and if energy-saving measures
this inherent interaction generates lots of heat. But with bismuth are not introduced, this traffic could start to be responsible for
alloys, the spin-off splitting energy can rule out the possibility of a significant proportion of the world’s carbon footprint. So I, for
Auger recombination if the bismuth content in the alloy exceeds one, hope that this group of pioneers succeed in their efforts.
Editor Dr Richard Stevenson [email protected] Circulation & Subscriptions Assistant Annette Weatherilt [email protected]
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August / September 2013 www.compoundsemiconductor.net 3
Editorial View v4RS.indd 3 28/08/2013 15:48
contents
ConneCting the CoMPoUnD SeMiConDUCtor CoMMUnity Volume 19 issue 06 2013
features
36
53
44
48
4 www.compoundsemiconductor.net August / September 2013
Contents CS v1.indd 4 29/08/2013 14:35
27
Replacing halogen lamps
Inferior light quality holds back the sales of most LED- 18
based replacements for halogen lamps in casinos,
hotels, high-end retailers and cruise ships. But that’s
not the case for Soraa’s lighting products, which
produce full-spectrum emission with a violet LED
exciting red, green and blue phosphors.
30
Simplify air quality monitoring
Conventional sensors for assessing the air quality in
buildings are wired into the mains, making them
expensive to install and reposition. But portability and
battery powering is possible with Gas Sensing Solutions’
modules that feature mid-infrared LEDs and
photodetectors.
36
Building brighter, cheaper LEDs
The gases and chemicals that are consumed during
the manufacturing of LEDs make a considerable
contribution to device costs. But savings are possible by news analysis
switching to a new MOCVD design with a flared chamber 18 Eastern promise?
profile that not only trims gas consumption by up to
20 The rise and rise of Infinera
40 percent but also shortens the growth interruption
between layers, leading to improved multiple quantum 22 Sapphire substrates to lead future LED markets
well quality. 24 Plessey thrusts LEDs into the market
44
Boosting triple-junction yield
research review
with in-situ monitoring
59 Better electron blocking boosts UV efficiency
In-situ monitoring provides a great deal of valuable 60 Heavily doped silicon enables chemical lift off
information for developers and producers of
61 Exposing anti-phase profiles in GaP-on-silicon
multi-junction solar cells. It can determine interface
quality; the thickness, doping level and composition of
every layer; and wafer bow.
news
48 Water-based strippers tread 06 IHS: LED manufacturers to continue oversupplying
07 IQE qualifies its CPV epiwafers 08 Doped tungsten
lightly on the environment
doubles lifetime in sapphire growth 10 Raw material global
A novel, water-based stripper offers a fast,
environmentally friendly approach to high quality demand doubles as LED market booms 11 Alta Devices
removal of photoresist and the carrying out of metal enables unmanned aircrafts to fly in the sun 12 Scientists
lift-off. make progress toward quantum dot solar cell 14 Saelig
samples Plessey LEDs 15 Cree introduces $99 LED street
53
An elemental change to light 16 GaN-on-silicon LEDs are catching incumbents
laser design 17 First Solar sells CdTe Canadian power plants
Today’s telecom lasers are plagued with Auger-related
losses, which drive down efficiency and make device
cooling mandatory. The solution: Switch to an active
region with alloys featuring a bismuth content of more BbVelootltcuemkri nee g1le9 ic n It sUrsouVne L 6E 2D0s13 @compoundsemi www.compoundsemiconductor.net
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Front Cover CS v3RS.indd 1 28/08/2013 15:47
August / September 2013 www.compoundsemiconductor.net 5
Contents CS v1.indd 5 29/08/2013 14:35
NEWS REVIEW
IHS: LED manufacturers to continue
oversupplying
Despite a major surplus in the of utilisation rates alike are occurring
leD market, top suppliers are increasing despite a glut of supply that has plagued
their capital spending and production. the market since 2010. the surplus
that’s because of government incentives started when leD suppliers made
enabling firms to cash in on an expected major investments in capacity in 2010
boom in the lighting business. and 2011, stemming from the efforts of
local governments in China to subsidize
Global shipments of moCVD, tools that moCVD purchasing.
are essential for leD manufacturing are
expected to rise by 17 percent in 2013, Governments are helping fund the
according to alice tao, senior analyst, procurement of moCVD by to 80 percent
leDs and lighting for iHs. of the total price of the equipment.
many of these companies also are
this will be the first annual growth for increasing production in the belief that
the moCVD market since 2011, and will they can capitalize on upcoming fast
represent a major turnaround from the growth in the market for leDs used in the supply of leDs, measured in terms
70 percent plunge of 2012. lighting. of manufactured die, is expected to
exceed demand by 69 percent in 2013
at the same time that growth is being “the global market for leD lighting is and in 2014. the glut will decline slightly
projected, factory utilisation rates are expected to double during the next three to 61 percent in 2015 and then to 40
increasing for major leD companies years,” noted tao. “the prospect of this percent in 2016.
in asia. in south Korea, for instance, massive growth is irresistible to leD
utilisation rose to about 75 percent in suppliers, who don’t want to be caught major leD suppliers include san’an,
the second quarter, up from 60 percent short of supply during this expected elec-tech of China, samsung and seoul
in 2012. meanwhile, utilisation for some boom. But given the rising investments semiconductor of south Korea, epistar of
taiwanese and Chinese companies in manufacturing equipment, the acute taiwan, and other companies including
reached 90 percent in the second leD oversupply already in existence is philips lumileds of the united states and
quarter. the spending and boosting expected to continue through 2016.” German firm osram.
Natural disasters cause GaAs substrate market to flounder
slow GrowtH in the Gaas device conspired to reduce Gaas bulk substrate
market in 2012, coupled with new demand”, notes eric Higham, Director
developments and competitive of the strategy analytics Gaas and
technologies in cellular power amplifiers Compound semiconductor technologies
dropped demand for semi-insulating service (Gaas).
Gaas bulk substrates.
He adds, “as multi-band pa architectures
wafer pricing is returning to normal become even more prevalent in
levels after a pricing spike caused by the cellular architectures and silicon-based
2011 earthquake and tsunami in japan. technologies continue to gain market
this, coupled with falling demand drove the report estimates that this demand share, this segment will be challenged to
market revenue to double digit declines. resulted in roughly $193 million in find growth.”
revenues in 2012. the forecast indicates
the recently released strategy analytics demand will return to slow growth and asif anwar, Director in the strategy
Gaas and Compound semiconductor reach nearly 32300 ksi in 2017. the analytics strategic technologies practice
technologies service (Gaas) spread slow growth in demand, coupled with (stp) continues, “the disruptions in the
sheet model and Forecast and outlook substrate pricing dropping to more Gaas bulk substrate supply chain caused
report, “semi-insulating Gaas substrate normal pricing profiles will cause revenue by the japanese earthquake and tsunami
markets: 2012-2017”, forecasts that total to decline to an estimated $189 million in 2011 seem to be working their way out
demand for semi-insulating (si) Gaas in 2017. of the system. while this is good for the
bulk substrates from manufacturers companies involved, the effect has been
such as Freiberger Compound materials “the Gaas device market struggled to a to drop substrate pricing back to pre-
(FCm), Hitachi Cable, aXt, sumitomo small gain in 2012. this and the on going earthquake levels and this, coupled with
and Dowa fell by nearly 10 percent from conversion to multi-band cellular pas that lower demand has decreased substrate
2011 levels. replace several single-band devices both revenue substantially.”
6 www.compoundsemiconductor.net August / September 2013
News CS v1.indd 6 28/08/2013 16:04
AES-F-22059N CoEmWpSeSm i_RAEES-VF-I2E20W59 CompSemi 2/15/12 2:44 PM Page 1
IQE qualifies its CPV
epiwafers
iQe’s material has been qualified initial deployment will be in southwestern
for production-ready, high-volume u.s., southern europe around the
manufacturing by its strategic partner mediterranean, middle east and Northern
solar junction. solar junction, a africa (meNa), southern africa, Chile,
developer of high efficiency multi- australia and China. Vijit sabnis, Chief
junction solar energy cells for the CpV executive of solar junction said: “the
market, has successfully completed the successful qualification is attributable
process transfer and full qualification of to the close partnership of the team
iQe’s epitaxial materials for high-volume responsible, from solar junction and
manufacturing. iQe, over the past twelve months.
this qualification is a major milestone “the iQe epitaxial materials are
which has required extensive validation fabricated at solar junction’s 4-inch
of iQe’s manufacturing processes, and 6-inch production facility, partially
product quality and reliability in funded by the u.s. Department of
delivering material with cutting edge energy suNpatH contract, in silicon
solar efficiency. Valley. solar cells are currently out
for independent third-party verification
solar junction is now production-ready of efficiency results with performance
and at an advanced stage in qualifying anticipated to be equivalent to that
its cells with the leading global CpV produced by our internal pilot line.”
systems manufacturers. solar junction
expects to receive initial high-volume solar junction’s successful qualification
orders over the coming months. continues to demonstrate the value of its
as a result of the joint development dilute nitride materials, which uniquely
agreement in February between provides CpV system manufacturers
amonix and solar junction, amonix, the foundation to deliver the most
worldwide installer of CpV systems, is efficient conversion of solar to electrical
already testing solar cells produced with energy.
iQe epitaxy and observing improved
performance. in october 2012, solar junction achieved
a world record 44 percent efficiency for
jeff allen, Vice president of Business a standard 3j cell at a concentration of
Development at solar junction, said: 942 suns.
“the qualification of our production-
ready 42 percent median efficiency solar Drew Nelson, iQe Chief executive,
Proprietary technologies serving
cells produced by iQe and our new said: “the successful qualification of
fabrication line could not have come at iQe’s production scale epiwafers for the revolution in semiconductor
a better time for solar junction and the CpV marks a key milestone in bringing
CpV market. solar junction’s advanced technology and LED manufacturing.
to market. what has been particularly
“solar junction’s key customers are impressive is that median efficiencies
highly impressed with the 2+ percent from our large volume 4-inch and 6-inch • High Flow Gas
cell efficiency advantage over our platforms are at least as good as having Delivery Systems
competitor’s cells, which translates to an been previously achieved in small scale
estimated reduction in total installed CpV demonstrations. • Gas Blenders & Mixers
system cost of approximately 5 percent.
• Gas Distribution Systems
“the performance and manufacturing
“the rapid adoption of our technology advantages of solar junction’s 3j solar • Custom Gas Equipment
in the u.s., China and middle east cell technology will accelerate adoption
will propel solar junction to market of CpV and position iQe to become the
leadership in CpV.” key epiwafer supplier to the global utility
scale CpV solar market.
a recent independent industry report 180 Quaker Lane,Malvern,PA 19355
estimates the target market for CpV is “these achievements demonstrate the T:610-647-8744 F:610-640-4548
expected to exceed 5Gw over the next success of our strategy to invest in solar email:[email protected]
few years, with more than 750mw to be junction and enter into an exclusive,
installed by 2015. worldwide license for the technology.” www.SEMI-GAS.com
August / September 2013 www.compoundsemiconductor.net 7
News CS v1.indd 7 27/08/2013 14:20
NEWS REVIEW
Doped tungsten doubles
We bring quality to light.
lifetime in sapphire growth
plaNsee uses the tungsten. this is because
creep-resistant tungsten potassium leads to a
material ‘wVm’ to more stable and coarser
manufacture heaters crystalline structure
for sapphire growth. than pure tungsten. this
these have more than property also has a positive
twice the service life of influence on the material’s
conventional tungsten creep resistance.
heaters. the graph below compares
the sag for pure tungsten
sapphire growth and wVm.
takes place at high
temperatures of samples used in the
approximately 2100 analysis obtained from the
°C. in the Kyropoulos graph above were tested at
process, rod heaters 2100 °C, for 6 hours with a
made from pure tungsten bending stress of 22 mpa.
are generally used.
LED test &
these often have to be plansee says rod heaters,
measurement replaced after just a few cycles. this is mesh heaters, and sheet heaters made
due to the high level of embrittlement from wVm provide excellent dimensional
and deformation. it can sometimes be so stability, especially when it comes to
Solutions from the world extreme that the heater rods touch the high-temperature processes such as
leader shielding and cause short-circuits. sapphire growth.
to meet the needs of single crystal
Instrument Systems continues
growth applications, plansee has while conventional tungsten heaters
to set the benchmark in LED
further developed a material that has have to be replaced after just a few
metrology. Whether testing
individual LEDs (standard or already earned the plaudits of the cycles, wVm heaters are claimed to
high-power), LED modules, or lighting industry for its behaviour at high easily last for 2 to 3 times as long.
OLEDs – the global LED industry temperatures.
relies on us to engineer superior rod type heater used in sapphire growth
measurement equipment for the material consists of pure tungsten at 99.97 percent, the purity of wVm
high-speed production testing with very low quantities (30-70 ppm) is the same as that of pure plansee
and high-performance R&D and of potassium. the creep resistance of tungsten. the potassium content in
QC applications. this material is several times better than wVm is firmly bound in the material. as a
that of pure tungsten. this capability result, it will not contaminate the furnace
was recently confirmed by a sag test atmosphere. the material is suitable for
performed by plansee’s materials use in extremely sensitive high-vacuum
engineers. processes in the same way as pure
tungsten.
the scientists at plansee simulated
the use of its novel material at high But when it comes to sapphire growth,
temperatures and under various plansee believes it is able to offer more
mechanical loads. the sag test proved than hot zones with particularly durable
that wVm sags four times less than pure heaters. the company also produces the
corresponding pressed-sintered tungsten
crucibles. these high purity crucibles
have an ultra-smooth surface.
the sapphire can be extracted without
difficulty from the crucible without any
damage to the crucible surface. and the
smooth surface is less susceptible to
corrosion in contact with the sapphire
melt. with their high and homogenous
light measurement
density of over 93 % the crucibles are
www.instrumentsystems.com non-deformable even at high and rapidly
changing temperatures.
8 www.compoundsemiconductor.net August / September 2013
IS_Ad_Image blau_58x247.indd 1 07.02.13 13:10
News CS v1.indd 8 27/08/2013 14:20
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temperature capabilities with low outgassing.
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NEWS REVIEW
Raw material global demand doubles
as LED market booms
Global demand for precursor, a The market for precursor used in the moCVd as the led lighting market
material used in manufacturing of leds, metal-organic chemical vapour deposition grows,” said Richard Son, senior led
is set to more than double from 2012 (moCVd) manufacturing process for analyst at IHS.
to 2016, as the market for led lighting making leds will rise to 69 tons in 2016,
booms, according to a new report up a notable 114 percent from 32 tons in Precursor is a core material that ensures
entitled “Precursor for led moCVd– 2012, as presented in the figure. the optimal light efficiency for each
market and Industry analysis,” from “The boom in the precursor market led epi layer. It is used in the moCVd
displaybank, now part of IHS. reflects the rising operating rate of process, which is the most important
process in manufacturing led chips.
major precursors include trimethylgallium
(TmGa), trimethylindium (TmIn), trimethyl
aluminum (Tma), triethylgallium (TeGa)
and C2mg2. among these, TmGa is the
most widely used and commands about
94 percent of total demand.
Global shipments of moCVd equipment
are on the rise, with shipments expected
to climb by 17 percent in 2013. The
largest buyers of moCVd equipment—
South Korea, Taiwan and China—
account for about 80 percent of the
global demand of precursors.
China, which is generating the highest
growth in installation of moCVd
equipment among the three countries, is
expected to make up 45 percent of the
global demand of precursors in 2016.
In the nascent stage of the led market,
dow Chemical Co. was the unrivalled
leader in the precursor market.
However, with the recent growth in
precursor demand, new players have
been investing in R&d and manufacturing
facilities while aggressively breaking into
the market with low prices for similar-
quality product.
Such developments will intensify
competition further among precursor
makers.
Untitled-2 1 13/08/2013 11:47
10 www.compoundsemiconductor.net August / September 2013
News CS v1.indd 10 27/08/2013 14:20