Semiconductor-Diode Parametric Amplifiers

216 Pages·2012·35.44 MB·English

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Semiconductor-Diode
Parametric Amplifiers
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PRENTICE-HALL INTERNATIONAL SERIES IN ENGINEERING
BLACKWELL AND KOTZEBUE Semiconductor-Diode Parametric Amplifiers
DBESHER Games of Strategy: Theory and Application
EDMUNDSON, ED. Proceedings of the National Symposium on Machine Translation
KOLK Modern Flight Dynamics
STANTON Numerical Methods for Science and Engineering
PRENTICE-HALL, INC.
PRENTICE-HALL INTERNATIONAL, INC., UNITED KINGDOM AND EIRE
PRENTICE-HALL OF CANADA, LTD., CANADA
BERLINER UNION, WEST GERMANY AND AUSTRIA
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Semiconductor-Diode
Parametric Amplifiers
LAWRENCE A. BLACKWELL
Texas Instruments, Inc.
KENNETH L. KOTZEBUE
Watkins-Johnson Co.
Prentice-Hall, Inc., Englewood Cliffs, N. J.
1961
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Preface
The tempo of technological progress today is undeniably swift and at
times rather startling. Often, before we are fully able to grasp the conse-
quences of one development, another has made its appearance. The
progress made in recent years on the achievement of low-noise amplifica-
tion at microwave frequencies is certainly a good example. Up to a few
years ago, it was largely a struggle for one tenth-decibel improvement in
noise figure here and another there. Then, almost without warning, a
deluge of low-noise devices was upon us. The "old" traveling-wave tube
began to achieve noise figures comparable with the best resistive mixers,
and soon achieved noise figures well below the supposed theoretical
minimum. Quantum mechanics became a must for the aspiring elec-
trical engineer with the introduction of "microwave amplification by
stimulated emission"—the maser. Here was a device with a noise
figure so low that it was some time before this quantity could even be
measured! Close on the heels of the maser came the parametric
amplifier. Not as low in noise as the maser, the parametric amplifier
nevertheless quickly achieved a position of prominence—mainly because
of its rather unbelievable simplicity.
The writing of a book in such an atmosphere of swift and unyielding
progress is certainly not without its hazards. A "comprehensive" book is
out of the question. A compilation of all the current literature runs the
risk of having significant omissions by the time of publication. Today's
statements of finality can become tomorrow merely historical curiosities.
The present book will make no pretense as to completeness. The empha-
sis instead will be on the presentation of such basic information as will
be of interest to the average design engineer who wants to know how and
why parametric amplifiers work, and when they can be employed to ad-
vantage.
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Vi Preface
Further boundaries to the discussion can be summed up by the fol-
lowing three phrases: (1) semiconductor diodes; (2) low noise; and (3)
microwave devices. Parametric devices can be based on electron beam
and ferrite phenomena. Other embodiments will, no doubt, be forth-
coming. The semiconductor-diode parametric amplifier, however, has
the advantage of being the simplest device both in concept and construc-
tion, and currently is the most popular form of parametric amplifier.
Many of the concepts presented here are by no means limited to diode
devices: the concepts of energy transfer and general noise properties are,
for example, of universal application. The emphasis on the low-noise
aspects of these devices is mainly dictated by the fact that this charac-
teristic is the major reason for the employment of parametric amplifiers.
Because of this, and because of some confusion regarding the peculiar
noise properties of parametric amplifiers, a fairly complete discussion of
noise is incorporated. Finally, since it is largely in the microwave re-
gion that low-noise performance is both very useful and very difficult
to obtain, whenever reference is made to actual devices, it will be
made in the context of microwave devices.
The authors would like to express their sincere appreciation for the
assistance and encouragement provided by Texas Instruments Incorpo-
rated during the writing of this book. We wish to especially thank Dr.
J. R. Baird, T. M. Hyltin, and B. T. Vincent, Jr. for many helpful dis-
cussions and suggestions. It is also a pleasure to acknowledge the help of
R. E. Allan, T. Pedersen, and Mrs. Betty Chupik for much of the com-
putational work. Special thanks are also due Dr. J. J. Spilker, Jr. for
his assistance in the analysis of the noise characteristics of degenerate
parametric amplifiers.
L. A. Blackwell
K. L. Kotzebue
Los Angeles, California
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