OPAx836 Very-Low-Power, Rail-to-Rail Out, Negative-Rail In, VFB Op Amps

57 Pages·2015·2.11 MB·English

Product Sample & Technical Tools & Support & Reference
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OPA836,OPA2836
SLOS712G–JANUARY2011–REVISEDOCTOBER2015
OPAx836 Very-Low-Power, Rail-to-Rail Out, Negative-Rail In, Voltage-Feedback
Operational Amplifiers
1 Features For battery-powered, portable applications where
power is a key importance, the low power
• LowPower:
1 consumption and high-frequency performance of the
– SupplyVoltage:2.5Vto5.5V OPA836 and OPA2836 devices offer designers
– QuiescentCurrent:1mA(Typ) performance versus power that is not attainable in
other devices. Coupled with a power-saving mode
– PowerDownMode:0.5 µATyp)
that reduces current to less than 1.5 μA, these
• Bandwidth:205MHz devices offer an attractive solution for high-frequency
• SlewRate:560V/µs amplifiersinbattery-poweredapplications.
• RiseTime:3ns(2VSTEP) The OPA836 RUN package option includes
• SettlingTime(0.1%):22ns(2V ) integrated gain-setting resistors for the smallest
STEP
possible footprint on a printed circuit board
• OverdriveRecoveryTime:60ns
(approximately 2 mm × 2 mm). By adding circuit
• SNR: 0.00013% (–117.6dBc)at1kHz(1V )
RMS traces on the PCB, gains of +1, –1, –1.33, +2, +2.33,
• THD: 0.00003% (–130dBc)at1kHz(1V ) –3, +4, –4, +5, –5.33, +6.33, –7, +8 and inverting
RMS
attenuations of –0.1429, –0.1875, –0.25, –0.33, –0.75
• HD /HD :–85dBc/–105dBcat1MHz(2V )
2 3 PP
canbeachieved. SeeTable3andTable4fordetails.
• InputVoltageNoise:4.6nV/√Hz(f=100kHz)
The OPA836 and OPA2836 devices are
• InputOffsetVoltage:65 µV(±400-µVMax)
characterized for operation over the extended
• CMRR:116dB
industrialtemperaturerangeof –40°Cto125°C.
• Output CurrentDrive:50mA
• RRO:Rail-to-RailOutput DeviceInformation(1)
• InputVoltageRange:–0.2Vto+3.9V PARTNUMBER PACKAGE BODYSIZE(NOM)
(5-VSupply) SOT-23(6) 2.90mm×1.60mm
OPA836
• OperatingTemperatureRange: WQFN(10) 2.00mm×2.00mm
–40°Cto+125°C SOIC(8) 4.90mm×3.91mm
VSSOP(10) 3.00mm×3.00mm
2 Applications OPA2836
UQFN(10) 2.00mm×2.00mm
• Low-PowerSignalConditioning WQFN(10) 2.00mm×2.00mm
• AudioADCInputBuffers (1) Forallavailablepackages,seethepackageoptionaddendum
attheendofthedatasheet.
• Low-PowerSARandΔΣ ADCDrivers
• PortableSystems HarmonicDistortionvsFrequency
• Low-PowerSystems
-40
• High-DensitySystems VS= 2.7 V,
-50 G = 1,
VOUT= 1 Vpp,
3 Description -60 RF= 0W,
The OPA836 and OPA2836 devices are single- and dBc -70 RL= 1 kW
dual-channel, ultralow power, rail-to-rail output, on - -80
naemgpalitfiiveers-radilesiginnpeudt,tovooplteargaete-feoevdebracakpoowpeerr-asutiopnpalyl Distorti -90 HD2
range of 2.5 V to 5.5 V (single supply), or ±1.25 V to nic -100
o
±2.75 V (dual supply). Consuming only 1 mA per arm -110
channel and a unity gain bandwidth of 205 MHz, H
-120 HD3
these amplifiers set an industry-leading power-to-
performanceratioforrail-to-railamplifiers. -130
-140
10k 100k 1M 10M
f - Frequency - Hz
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.
OPA836,OPA2836
SLOS712G–JANUARY2011–REVISEDOCTOBER2015 www.ti.com
Table of Contents
1 Features.................................................................. 1 8.3 FeatureDescription.................................................24
2 Applications........................................................... 1 8.4 DeviceFunctionalModes........................................27
3 Description............................................................. 1 9 ApplicationandImplementation........................ 30
4 RevisionHistory..................................................... 2 9.1 ApplicationInformation............................................30
9.2 TypicalApplications................................................36
5 OPA836-RelatedDevices...................................... 4
10 PowerSupplyRecommendations..................... 40
6 PinConfigurationandFunctions......................... 4
11 Layout................................................................... 40
7 Specifications......................................................... 6
11.1 LayoutGuidelines.................................................40
7.1 AbsoluteMaximumRatings......................................6
11.2 LayoutExample....................................................41
7.2 ESDRatings..............................................................6
12 DeviceandDocumentationSupport................. 42
7.3 RecommendedOperatingConditions.......................6
7.4 ThermalInformation:OPA836..................................6 12.1 DeviceSupport ....................................................42
7.5 ThermalInformation:OPA2836................................7 12.2 RelatedLinks........................................................42
7.6 ElectricalCharacteristics:V =2.7V........................7 12.3 CommunityResources..........................................42
S
7.7 ElectricalCharacteristics:V =5V...........................9 12.4 Trademarks...........................................................42
S
7.8 TypicalCharacteristics............................................12 12.5 ElectrostaticDischargeCaution............................42
12.6 Glossary................................................................42
8 DetailedDescription............................................ 24
13 Mechanical,Packaging,andOrderable
8.1 Overview.................................................................24
Information........................................................... 42
8.2 FunctionalBlockDiagrams.....................................24
4 Revision History
ChangesfromRevisionF(June2015)toRevisionG Page
• ChangedtextinfirstparagraphofPower-DownOperationsection..................................................................................... 25
ChangesfromRevisionE(September2013)toRevisionF Page
• ChangedFeaturessection..................................................................................................................................................... 1
• AddedPinConfigurationandFunctionssection,ESDRatingstable,FeatureDescriptionsection,DeviceFunctional
Modes,ApplicationandImplementationsection,PowerSupplyRecommendationssection,Layoutsection,Device
andDocumentationSupportsection,andMechanical,Packaging,andOrderableInformationsection .............................. 1
• ChangedDeviceComparisonTable....................................................................................................................................... 4
• ChangedPinFunctionstable................................................................................................................................................. 5
• ChangedOpenLoopGainvsFrequencygraph................................................................................................................... 15
• ChangedInputReferredNoisevsFrequencygraph ........................................................................................................... 15
• ChangedOpenLoopGainvsFrequencygraph ................................................................................................................. 21
• ChangedInputReferredNoisevsFrequencygraph............................................................................................................ 21
ChangesfromRevisionD(October2011)toRevisionE Page
• AddedOPA2836RMCpackagetodocument........................................................................................................................ 1
• AddedRMCpindefinitionstoPinFunctionstable................................................................................................................. 5
• DeletedPackaging/OrderingInformationtable,leavingonlynotetoPOA............................................................................. 6
• AddedOPA2836RMCpackagetoThermalInformationtable............................................................................................... 7
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ChangesfromRevisionC(September2011)toRevisionD Page
• RemovedProductPreviewfromOPA835IRUNTandOPA835IRUNR.................................................................................. 4
• RemovedProductPreviewfromOPA836IRUNTandOPA836IRUNR.................................................................................. 6
• ChangedResistorTemperatureCoefficientTypvalueFrom:TBDTo:<10.......................................................................... 9
• ChangedQuiescentoperatingcurrentTo:Quiescentoperatingcurrentperamplifier........................................................... 9
• ChangedResistorTemperatureCoefficientTypvalueFrom:TBDTo:<10........................................................................ 11
• ChangedQuiescentoperatingcurrentTo:Quiescentoperatingcurrentperamplifier......................................................... 11
ChangesfromRevisionB(May2011)toRevisionC Page
• Addedthe"TheOPA836RUNpackage..."texttotheDescription........................................................................................ 1
• RemovedProductPreviewfromalldevicesexceptOPA835IRUNTandOPA835IRUNR.................................................... 4
• RemovedProductPreviewfromalldevicesexceptOPA836IRUNTandOPA836IRUNR.................................................... 6
• Changed-Channeltochannelcrosstalk(OPA2836)TypvalueFrom:TBDTo:–120dB.................................................... 8
• ChangedtheCommon-moderejectionratioMinvalueFrom:94dBTo:91dB.................................................................... 8
• AddedGAINSETTINGRESISTORS(OPA836IRUNONLY)................................................................................................ 9
• ChangedtheQuiescentoperatingcurrent(T =25°C)MinvalueFrom:0.8mATo:0.7mA................................................ 9
A
• ChangedthePowersupplyrejection(±PSRR)MinvalueFrom:95dBTo:91dB................................................................ 9
• ChangedthePower-downpinbiascurrentCONDITIONSFrom:PD=0.7VTo:PD=0.5V............................................... 9
• ChangedthePower-downquiescentcurrentCONDITIONSFrom:PD=0.7VTo:PD=0.5V............................................ 9
• Changed-Channeltochannelcrosstalk(OPA2836)TypvalueFrom:TBDTo:–120dB.................................................. 10
• ChangedtheCommon-moderejectionratioMinvalueFrom:97dBTo:94dB.................................................................. 11
• AddedGAINSETTINGRESISTORS(OPA836IRUNONLY)............................................................................................. 11
• ChangedtheQuiescentoperatingcurrent(T =25°C)MinvalueFrom:0.9mATo:0.8mA.............................................. 11
A
• ChangedthePowersupplyrejection(±PSRR)MinvalueFrom:97dBTo:94dB.............................................................. 11
• ChangedthePower-downquiescentcurrentCONDITIONSFrom:PD=0.7VTo:PD=0.5V......................................... 11
• ChangedthePower-downquiescentcurrentConditionsFrom:PD=0.7VTo:PD=0.5V............................................... 11
• AddedFigureCrosstalkvsFrequency................................................................................................................................. 16
• AddedFigureCrosstalkvsFrequency................................................................................................................................. 22
• AddedsectionSingleEndedtoDifferentialAmplifier........................................................................................................... 31
ChangesfromRevisionA(March2011)toRevisionB Page
• ChangedOPA836fromproductpreviewtoproductiondata.................................................................................................. 1
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5 OPA836-Related Devices
DEVICE BW(AV=1) SLEWRATE Iq(+5V) INPUTNOISE RAIL-TO-RAILIN/OUT DUALS
(MHz) (V/µs) (mA) (nV/√Hz)
OPA836 205 560 1 4.6 –VS/Out OPA2836
OPA835 30 110 0.25 9.3 –VS/Out OPA2835
OPA365 50 25 5 4.5 In/Out OPA2365
THS4281 95 35 0.75 12.5 In/Out
LMH6618 140 45 1.25 10 In/Out LMH6619
OPA830 310 600 3.9 9.5 –VS/Out OPA2830
ForacompleteselectionofTIHighSpeedAmplifiers,visitti.com.
6 Pin Configuration and Functions
OPA836DBVPackage
6-PinSOT-23 OPA2836DPackage
TopView 8-PinSOIC
TopView
VOUT 1 6 VS+ VOUT1 1 8 VS+
VS- 2 + - 5 PD VIN1- 2 - 7 VOUT2
V 3 4 V +
IN+ IN- V 3 6 V
IN1+ - IN2-
+
V 4 5 V
S- IN2+
OPA836RUNPackage
10-PinWQFN
TopView
OPA2836DGSPackage
V 10-PinVSSOP
S+
TopView
VOUT 1 10 9 FB1
1.6k VOUT1 1 10 VS+
- +
VIN- 2 8 FB2 VIN1- 2 - 9 VOUT2
1.2k +
VIN+ 3 7 FB3 VIN1+ 3 - 8 VIN2-
400 VS- 4 + 7 VIN2+
FB
PD 4 5 6 4 PD1 5 6 PD2
V
S-
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OPA2836RUN,RMCPackages
10-PinWQFN,UQFN
TopView
V
S+
VOUT1 1 10 9 VOUT2
- + + -
V 2 8 V
IN1- IN2-
VIN1+ 3 7 VIN2+
PD1 4 6 PD2
5
V
S-
PinFunctions
PIN
OPA836 OPA2836
TYPE DESCRIPTION
NAME WQFN,
SOT-23 WQFN SOIC VSSOP
UQFN
FB 9 I/O Connectiontotopof2.4-kΩinternalgainsettingresistors
1
Connectiontojunctionof1.8-kΩand2.4-kΩinternalgain
FB 8 I/O
2 settingresistors
—
Connectiontojunctionof600-Ωand1.8-kΩinternalgain
FB 7 — — I/O
3 settingresistors
FB 6 I/O Connectiontobottomof600-Ωinternalgainsettingresistors
4
AmplifierPowerDown,low=low-powermode,
PD 5 4 — I
high=normaloperation(pinmustbedriven)
Amplifier1PowerDown,low=low-powermode,
PD1 5 4 I
high=normaloperation(pinmustbedriven)
— —
Amplifier2PowerDown,low=low-powermode,
PD2 6 6 I
high=normaloperation(pinmustbedriven)
V 3 3 I Amplifiernoninvertinginput
IN+
— —
V 4 2 I Amplifierinvertinginput
IN–
V 3 3 3 I Amplifier1noninvertinginput
IN1+
V 2 2 2 I Amplifier1invertinginput
IN1–
— —
V 5 7 7 I Amplifier2noninvertinginput
IN2+
V 6 8 8 I Amplifier2invertinginput
IN2–
V 1 1 — — — O Amplifieroutput
OUT
V 1 1 1 O Amplifier1output
OUT1
— —
V 7 9 9 O Amplifier2output
OUT2
V 6 10 8 10 10 POW Positivepowersupplyinput
S+
V 2 5 4 4 5 POW Negativepowersupplyinput
S–
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7 Specifications
7.1 Absolute Maximum Ratings
overoperatingfree-airtemperaturerange(unlessotherwisenoted)(1)
MIN MAX UNIT
V toV Supplyvoltage 5.5 V
S– S+
V Inputvoltage V –0.7 V +0.7 V
I S– S+
V Differentialinputvoltage 1 V
ID
I Continuousinputcurrent 0.85 mA
I
I Continuousoutputcurrent 60 mA
O
SeeThermalInformation:OPA836
Continuouspowerdissipation and
ThermalInformation:OPA2836
T Maximumjunctiontemperature 150 °C
J
T Operatingfree-airtemperature –40 125 °C
A
T Storagetemperature –65 150 °C
stg
(1) StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestressratings
only,whichdonotimplyfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunderRecommended
OperatingConditions.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.
7.2 ESD Ratings
VALUE UNIT
Humanbodymodel(HBM),perANSI/ESDA/JEDECJS-001(1) ±6000
V Electrostaticdischarge Charged-devicemodel(CDM),perJEDECspecificationJESD22-C101(2) ±1000 V
(ESD)
Machinemodel ±200
(1) JEDECdocumentJEP155statesthat500-VHBMallowssafemanufacturingwithastandardESDcontrolprocess.
(2) JEDECdocumentJEP157statesthat250-VCDMallowssafemanufacturingwithastandardESDcontrolprocess.
7.3 Recommended Operating Conditions
overoperatingfree-airtemperaturerange(unlessotherwisenoted)
MIN NOM MAX UNIT
V Singlesupplyvoltage 2.5 5 5.5 V
S+
T Ambienttemperature –40 25 125 °C
A
7.4 Thermal Information: OPA836
OPA836
THERMALMETRIC(1) SOT23-6 WQFN-10 UNIT
(DBV) (RUN)
6PINS 10PINS
R Junction-to-ambientthermalresistance 194 145.8 °C/W
θJA
R Junction-to-case(top)thermalresistance 129.2 75.1 °C/W
θJC(top)
R Junction-to-boardthermalresistance 39.4 38.9 °C/W
θJB
ψ Junction-to-topcharacterizationparameter 25.6 13.5 °C/W
JT
ψ Junction-to-boardcharacterizationparameter 38.9 104.5 °C/W
JB
(1) Formoreinformationabouttraditionalandnewthermalmetrics,seetheSemiconductorandICPackageThermalMetricsapplication
report,SPRA953.
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7.5 Thermal Information: OPA2836
OPA2836
VSSOP
THERMALMETRIC(1) SOIC-8 MSOP-10 WQFN-10 UQFN-10 UNIT
(D) (RUN) (RMC)
(DGS)
8PINS 10PINS 10PINS 10PINS
R Junction-to-ambientthermalresistance 150.1 206 145.8 143.2 °C/W
θJA
R Junction-to-case(top)thermalresistance 83.8 75.3 75.1 49.0 °C/W
θJCtop
R Junction-to-boardthermalresistance 68.4 96.2 38.9 61.9 °C/W
θJB
ψ Junction-to-topcharacterizationparameter 33.0 12.9 13.5 3.3 °C/W
JT
ψ Junction-to-boardcharacterizationparameter 67.9 94.6 104.5 61.9 °C/W
JB
(1) Formoreinformationabouttraditionalandnewthermalmetrics,seetheSemiconductorandICPackageThermalMetricsapplication
report,SPRA953.
7.6 Electrical Characteristics: V = 2.7 V
S
Testconditionsunlessotherwisenoted:V =+2.7V,V =0V,V =1V ,R =0Ω,R =2kΩ,G=1V/V,inputand
S+ S– OUT PP F L
outputreferencedtomid-supply,V =mid-supply–0.5V.T =25°C,unlessotherwisenoted.
IN_CM A
TEST
PARAMETER TESTCONDITIONS MIN TYP MAX UNIT LEVEL(1)
ACPERFORMANCE
VOUT=100mVPP,G=1 200
VOUT=100mVPP,G=2 100
Small-signalbandwidth MHz C
VOUT=100mVPP,G=5 26
VOUT=100mVPP,G=10 11
Gain-bandwidthproduct VOUT=100mVPP,G=10 110 MHz C
Large-signalbandwidth VOUT=1VPP,G=2 60 MHz C
Bandwidthfor0.1-dBflatness VOUT=1VPP,G=2 25 MHz C
Slewrate,rise VOUT=1VSTEP,G=2 260 V/µs C
Slewrate,fall VOUT=1VSTEP,G=2 240 V/µs C
Risetime VOUT=1VSTEP,G=2 4 ns C
Falltime VOUT=1VSTEP,G=2 4.5 ns C
Settlingtimeto1%,rise VOUT=1VSTEP,G=2 15 ns C
Settlingtimeto1%,fall VOUT=1VSTEP,G=2 15 ns C
Settlingtimeto0.1%,rise VOUT=1VSTEP,G=2 30 ns C
Settlingtimeto0.1%,fall VOUT=1VSTEP,G=2 25 ns C
Settlingtimeto0.01%,rise VOUT=1VSTEP,G=2 50 ns C
Settlingtimeto0.01%,fall VOUT=1VSTEP,G=2 45 ns C
Overshoot/Undershoot VOUT=1VSTEP,G=2 5%/3% C
f=10kHz,VIN_CM=mid-supply–0.5V –133 C
Second-orderharmonicdistortion f=100kHz,VIN_CM=mid-supply–0.5V –120 dBc C
f=1MHz,VIN_CM=mid-supply–0.5V –84 C
f=10kHz,VIN_CM=mid-supply–0.5V –137 C
Third-orderharmonicdistortion f=100kHz,VIN_CM=mid-supply–0.5V –130 dBc C
f=1MHz,VIN_CM=mid-supply–0.5V –105 C
f=1MHz,200-kHzToneSpacing,
Second-orderintermodulationdistortion VOUTEnvelope=1VPP, –90 dBc C
VIN_CM=mid-supply–0.5V
f=1MHz,200-kHzToneSpacing,
Third-orderintermodulationdistortion VOUTEnvelope=1VPP, –90 dBc C
VIN_CM=mid-supply–0.5V
Inputvoltagenoise f=100KHz 4.6 nV/√Hz C
Voltagenoise1/fcornerfrequency 215 Hz C
Inputcurrentnoise f=1MHz 0.75 pA/√Hz C
(1) Testlevels(allvaluessetbycharacterizationandsimulation):(A)100%testedat25°C;overtemperaturelimitsbycharacterizationand
simulation.(B)Nottestedinproduction;limitssetbycharacterizationandsimulation.(C)Typicalvalueonlyforinformation.
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Electrical Characteristics: V = 2.7 V (continued)
S
Testconditionsunlessotherwisenoted:V =+2.7V,V =0V,V =1V ,R =0Ω,R =2kΩ,G=1V/V,inputand
S+ S– OUT PP F L
outputreferencedtomid-supply,V =mid-supply–0.5V.T =25°C,unlessotherwisenoted.
IN_CM A
TEST
PARAMETER TESTCONDITIONS MIN TYP MAX UNIT LEVEL(1)
ACPERFORMANCE(continued)
Currentnoise1/fcornerfrequency 31.7 kHz C
Overdriverecoverytime,over/under Overdrive=0.5V 55/60 ns C
Closed-loopoutputimpedance f=100kHz 0.02 Ω C
Channel-to-channelcrosstalk(OPA2836) f=10kHz –120 dB C
DCPERFORMANCE
Open-loopvoltagegain(AOL) 100 125 dB A
TA=25°C –400 ±65 400 A
TA=0°Cto70°C –680 680
Inputreferredoffsetvoltage µV
TA=–40°Cto85°C –760 760 B
TA=–40°Cto125°C –1060 1060
TA=0°Cto70°C –6.2 ±1 6.2
Inputoffsetvoltagedrift(2) TA=–40°Cto85°C –6 ±1 6 µV/°C B
TA=–40°Cto125°C –6.6 ±1.1 6.6
TA=25°C 300 650 1000 A
Inputbiascurrent(3) TA=0°Cto70°C 190 1400 nA
TA=–40°Cto85°C 120 1500 B
TA=–40°Cto125°C 120 1800
TA=0°Cto70°C –2 ±0.33 2
Inputbiascurrentdrift(2) TA=–40°Cto85°C –1.9 ±0.32 1.9 nA/°C B
TA=–40°Cto125°C –2.1 ±0.37 2.1
TA=25°C –180 ±30 180 A
TA=0°Cto70°C –200 ±30 200
Inputoffsetcurrent nA
TA=–40°Cto85°C –215 ±30 215 B
TA=–40°Cto125°C –240 ±30 240
TA=0°Cto70°C –460 ±77 460
Inputoffsetcurrentdrift(2) TA=–40°Cto85°C –575 ±95 575 pA/°C B
TA=–40°Cto125°C –600 ±100 600
INPUT
TA=25°C, –0.2 0 V A
<3-dBdegradationinCMRRlimit
Common-modeinputrangelow
TA=–40°Cto125°C, –0.2 0 V B
<3-dBdegradationinCMRRlimit
TA=25°C, 1.5 1.6 V A
<3-dBdegradationinCMRRlimit
Common-modeinputrangehigh
TA=–40°Cto125°C, 1.5 1.6 V B
<3-dBdegradationinCMRRlimit
Inputlinearoperatingvoltagerange TA=25°C, –0.3to V C
<6-dBdegradationinTHD 1.75
Common-moderejectionratio 91 114 dB A
Inputimpedancecommonmode 200||1.2 kΩ||pF C
Inputimpedancedifferentialmode 200||1 kΩ||pF C
(2) InputOffsetVoltageDrift,InputBiasCurrentDrift,andInputOffsetCurrentDriftareaveragevaluescalculatedbytakingdataattheend
points,computingthedifference,anddividingbythetemperaturerange.
(3) Currentisconsideredpositiveoutofthepin.
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Electrical Characteristics: V = 2.7 V (continued)
S
Testconditionsunlessotherwisenoted:V =+2.7V,V =0V,V =1V ,R =0Ω,R =2kΩ,G=1V/V,inputand
S+ S– OUT PP F L
outputreferencedtomid-supply,V =mid-supply–0.5V.T =25°C,unlessotherwisenoted.
IN_CM A
TEST
PARAMETER TESTCONDITIONS MIN TYP MAX UNIT LEVEL(1)
OUTPUT
TA=25°C,G=5 0.15 0.2 V A
Linearoutputvoltagelow
TA=–40°Cto125°C,G=5 0.15 0.2 V B
TA=25°C,G=5 2.45 2.5 V A
Linearoutputvoltagehigh
TA=–40°Cto125°C,G=5 2.45 2.5 V B
Outputsaturationvoltage,high/low TA=25°C,G=5 80/40 mV C
TA=25°C ±40 ±45 mA A
Linearoutputcurrentdrive
TA=–40°Cto125°C ±40 ±45 mA B
GAINSETTINGRESISTORS(OPA836IRUNONLY)
ResistorFB1toFB2 DCresistance 1584 1600 1616 Ω A
ResistorFB2toFB3 DCresistance 1188 1200 1212 Ω A
ResistorFB3toFB4 DCresistance 396 400 404 Ω A
Resistortolerance DCresistance –1% 1% A
Resistortemperaturecoefficient DCresistance <10 PPM C
POWERSUPPLY
Specifiedoperatingvoltage 2.5 5.5 V B
TA=25°C 0.7 0.95 1.15 mA A
Quiescentoperatingcurrentperamplifier
TA=–40°Cto125°C 0.6 1.4 mA B
Powersupplyrejection(±PSRR) 91 108 dB A
POWERDOWN
Enablevoltagethreshold Specified"on"aboveVS–+2.1V 2.1 V A
Disablevoltagethreshold Specified"off"belowVS–+0.7V 0.7 V A
Power-downpinbiascurrent PD=0.5V 20 500 nA A
Power-downquiescentcurrent PD=0.5V 0.5 1.5 µA A
Turnontimedelay TimefromPD=hightoVOUT=90%offinal 200 ns C
value
Turnofftimedelay TimefromPD=lowtoVOUT=10%oforiginal 25 ns C
value
7.7 Electrical Characteristics: V = 5 V
S
Testconditionsunlessotherwisenoted:V =+5V,V =0V,V =2V ,R =0Ω,R =1kΩ,G=1V/V,inputandoutput
S+ S– OUT PP F L
referencedtomid-supply.T =25°C,unlessotherwisenoted.
A
TEST
PARAMETER TESTCONDITIONS MIN TYP MAX UNIT LEVEL(1)
ACPERFORMANCE
VOUT=100mVPP,G=1 205
VOUT=100mVPP,G=2 100
Small-signalbandwidth MHz C
VOUT=100mVPP,G=5 28
VOUT=100mVPP,G=10 11.8
Gain-bandwidthproduct VOUT=100mVPP,G=10 118 MHz C
Large-signalbandwidth VOUT=2VPP,G=2 87 MHz C
Bandwidthfor0.1-dBflatness VOUT=2VPP,G=2 29 MHz C
Slewrate,rise VOUT=2-VStep,G=2 560 V/µs C
Slewrate,fall VOUT=2-VStep,G=2 580 V/µs C
Risetime VOUT=2-VStep,G=2 3 ns C
Falltime VOUT=2-VStep,G=2 3 ns C
(1) Testlevels(allvaluessetbycharacterizationandsimulation):(A)100%testedat25°C;overtemperaturelimitsbycharacterizationand
simulation.(B)Nottestedinproduction;limitssetbycharacterizationandsimulation.(C)Typicalvalueonlyforinformation.
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Electrical Characteristics: V = 5 V (continued)
S
Testconditionsunlessotherwisenoted:V =+5V,V =0V,V =2V ,R =0Ω,R =1kΩ,G=1V/V,inputandoutput
S+ S– OUT PP F L
referencedtomid-supply.T =25°C,unlessotherwisenoted.
A
TEST
PARAMETER TESTCONDITIONS MIN TYP MAX UNIT LEVEL(1)
ACPERFORMANCE(continued)
Settlingtimeto1%,rise VOUT=2-VStep,G=2 22 ns C
Settlingtimeto1%,fall VOUT=2-VStep,G=2 22 ns C
Settlingtimeto0.1%,rise VOUT=2-VStep,G=2 30 ns C
Settlingtimeto0.1%,fall VOUT=2-VStep,G=2 30 ns C
Settlingtimeto0.01%,rise VOUT=2-VStep,G=2 40 ns C
Settlingtimeto0.01%,fall VOUT=2-VStep,G=2 45 ns C
Overshoot/Undershoot VOUT=2-VStep,G=2 7.5%/5% C
f=10kHz –133
Second-orderharmonicdistortion f=100kHz –120 dBc C
f=1MHz –85
f=10kHz –140
Third-orderharmonicdistortion f=100kHz –130 dBc C
f=1MHz –105
f=1MHz,200kHzToneSpacing,
Second-orderintermodulationdistortion –79 dBc C
VOUTEnvelope=2VPP
f=1MHz,200kHzToneSpacing,
Third-orderintermodulationdistortion –91 dBc C
VOUTEnvelope=2VPP
Signal-to-noiseratio,SNR f=1kHz,VOUT=1VRMS, 0.00013% C
22kHzbandwidth –117.6 dBc
0.00003%
Totalharmonicdistortion,THD f=1kHz,VOUT=1VRMS C
–130 dBc
Inputvoltagenoise f=100KHz 4.6 nV/√Hz C
Voltagenoise1/fcornerfrequency 215 Hz C
Inputcurrentnoise f>1MHz 0.75 pA/√Hz C
Currentnoise1/fcornerfrequency 31.7 kHz C
Overdriverecoverytime,over/under Overdrive=0.5V 55/60 ns C
Closed-loopoutputimpedance f=100kHz 0.02 Ω C
Channeltochannelcrosstalk(OPA2836) f=10kHz –120 dB C
DCPERFORMANCE
Open-loopvoltagegain(AOL) 100 122 dB A
TA=25°C –400 ±65 400 A
TA=0°Cto70°C –685 685
Inputreferredoffsetvoltage µV
TA=–40°Cto85°C –765 765 B
TA=–40°Cto125°C –1080 1080
TA=0°Cto70°C –6.3 ±1.05 6.3
Inputoffsetvoltagedrift(2) TA=–40°Cto85°C –6.1 ±1 6.1 µV/°C B
TA=–40°Cto125°C –6.8 ±1.1 6.8
TA=25°C 300 650 1000 A
Inputbiascurrent(3) TA=0°Cto70°C 190 1400 nA
TA=–40°Cto85°C 120 1550 B
TA=–40°Cto125°C 120 1850
TA=0°Cto70°C ±0.34 ±2
Inputbiascurrentdrift(2) TA=–40°Cto85°C ±0.34 ±2 nA/°C B
TA=–40°Cto125°C ±0.38 ±2.3
(2) InputOffsetVoltageDrift,InputBiasCurrentDrift,andInputOffsetCurrentDriftareaveragevaluescalculatedbytakingdataattheend
points,computingthedifference,anddividingbythetemperaturerange.
(3) Currentisconsideredpositiveoutofthepin.
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