Nanoelectronics for Next-Generation Integrated Circuits

299 Pages·2023·43.512 MB·English

by  Rohit Dhiman

Nanoelectronics for
Next-Generation Integrated
Circuits
The incessant scaling of complementary metal-oxide semiconductor (CMOS) tech-
nology has resulted in significant performance improvements in very-large-scale inte-
gration (VLSI) design techniques and system architectures. This trend is expected to
continue in the future, but this requires breakthroughs in the design of nano-CMOS
and post-CMOS technologies. Nanoelectronics refers to the possible future technolo-
gies beyond conventional CMOS scaling limits. This volume addresses the current
state-of-the-art nanoelectronic technologies and presents potential options for next-
generation integrated circuits.
Nanoelectronics for Next-Generation Integrated Circuits is a useful reference
guide for researchers, engineers, and advanced students working on the frontier of
the design and modeling of nanoelectronic devices and their integration aspects with
future CMOS circuits. This comprehensive volume eloquently presents the design
methodologies for spintronics memories, quantum-dot cellular automata, and post-
CMOS FETs, including applications in emerging integrated circuit technologies.

Nanoelectronics for
Next-Generation Integrated
Circuits
Edited by
Rohit Dhiman
Front cover image: sdecoret/Shutterstock
First edition published 2023
by CRC Press
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ISBN: 978-0-367-72652-2 (HBK)
ISBN: 978-0-367-72656-0 (PBK)
ISBN: 978-1-003-15575-1 (EBK)
DOI: 10.1201/9781003155751
Typeset in Times
by Deanta Global Publishing Services, Chennai, India
To my respected Parents for their affection and untiring efforts
in my upbringing; my loving family, Anjali, and our loving
daughter, Shipra Dhiman, for their precious time and patience.
–Rohit Dhiman

Contents
Preface.......................................................................................................................ix
Acknowledgments ..................................................................................................xiii
List of Contributors ..................................................................................................xv
About the Editor ......................................................................................................xix
Chapter 1 Emerging Graphene-Based Electronics: Properties to Potentials ........1
Sanghamitra Debroy, Santhosh Sivasubramani,
Swati Ghosh Acharyya, and Amit Acharyya
Chapter 2 Models for Modern Spintronics Memories with Layered
Magnetic Interfaces ............................................................................13
Divyansh Jain and Aniket Singha
Chapter 3 Evaluation of Magnetic Anisotropy via Intrinsic Spin Infusion ........37
Divyansh Jain and Aniket Singha
Chapter 4 Quantum-Dot Cellular Automata (QCA) Nanotechnology for
Next-Generation Systems ...................................................................57
Vijay Kumar Sharma
Chapter 5 An Overview of Nanowire Field-Effect Transistors for Future
Nanoscale Integrated Circuits ............................................................81
J. Ajayan, D. Nirmal, P. Mohankumar, and Shubham Tayal
Chapter 6 Investigation of Tunnel Field-Effect Transistors (TFETs) for
Label-Free Biosensing ......................................................................115
Suneet Kumar Agnihotri, Chithraja Rajan, Anil Lodhi,
and Dip Prakash Samajdar
Chapter 7 Analog and Linearity Analysis of Vertical Nanowire TFET ...........127
Sahil Sankhyan and Tarun Chaudhary
vii
viii Contents
Chapter 8 Effects of Variation in Gate Material on Enhancement Mode
P-GaN AlGaN/GaN HEMTs ...........................................................137
Shamshad Alam, Mamta Khosla, Ashish Raman, and Ravi Ranjan
Chapter 9 Electrical Modeling of One Selector-One Resistor (1S-1R) for
Mitigating the Sneak-Path Current in a Nano-Crossbar Array ........147
J. Arya Lekshmi, T. Nandha Kumar, A. F Haider, and K.B. Jinesh
Chapter 10 SRAM: An Essential Part of Integrated Circuits .............................175
Vishal Sharma and Shivani Godha
Chapter 11 Implementation of 512-bit SRAM Tile Using the Lector
Technique for Leakage Power Reduction .........................................199
Rajeevan Chandel, K Madhu Kiran, and Rohit Dhiman
Chapter 12 Characterization of Stochastic Process Variability Effects on
Nano-Scale Analog Circuits .............................................................223
Soumya Pandit
Chapter 13 Versatile Single Input Single Output Filter Topology Suitable
for Integrated Circuits ......................................................................241
Bhartendu Chaturvedi, Jitendra Mohan, and Jitender
Chapter 14 Secured Integrated Circuit (IC/IP) Design Flow .............................257
Rahul Chaurasia, Anirban Sengupta, and
Prasad Pradeeprao Kanhegaonkar
Index ......................................................................................................................275
Preface
The continuous scaling of complementary metal-oxide semiconductor (CMOS)
technology has resulted in significant performance improvements in very-large-
scale integration (VLSI) circuit design techniques and system architectures. In 1965,
Gordon Moore, one of the eminent scientists in Silicon Valley and co-founder of the
Intel Corporation, anticipated the growing trend of transistors in integrated circuits
(ICs). He speculated that the active transistor count in IC would be magnified twice
every 18–24 months. Since then, the number of transistors has risen dramatically in
an IC according to Moore’s trend, and tremendous growth has been seen wherein
the technology has escalated from small scale to large, ultra-large, and eventually
to the giga-scale integration. In order to develop more compressed, budget-friendly,
and sophisticated ICs, ‘More Moore’ (M ) and ‘More than Moore’ (M ) concepts
m tm
have evolved in the past few years. To construct advanced CMOS technologies and
scale numerous digital functions, the M concept is utilized. M largely empha-
m tm
sizes non-digital functions via heterogeneous system integration. According to the
International Technology Roadmap for Semiconductors, Intel’s next-generation bil-
lion transistor processors have set out to achieve industry leading performance in the
order of GHz. This trend is expected to continue in the future, but this will require
breakthroughs in the design of VLSI technologies, generally known as nanoelec-
tronics. With the development of novel materials and nano-scale devices, research
is being directed to gain better physical insights into the parameters that influence
device, circuit, and system characteristics. This book, Nanoelectronics for Next-
Generation Integrated Circuits, is written by researchers in the respective areas of
nanoelectronics, such as graphene-based electronics, spintronics, quantum-dot cellu-
lar automata (QCA), NWFETs, and other relevant areas. The 14 chapters of the book
are classified under four sections that cover modeling, simulation, and applications
of electronic, magnetic, and compound semiconductors in nanoelectronic devices,
circuits, and systems. This comprehensive volume eloquently presents the design
methodologies for spintronics memories, quantum-dot cellular automata, potential
NWFETs, TFETs, and their applications from the viewpoint of nano-scale ICs and
their application. The book shall serve as an invaluable reference for graduate stu-
dents, Ph.D./M.S./M.Tech. scholars, researchers, and practicing engineers working
on the frontier of nano-scale VLSI designs, circuits, systems, and their applications.
The first section of the book provides an overview and emphasizes the trends of
nanoelectronics. Chapter 1: ‘Emerging Graphene-Based Electronics: Properties to
Potentials’ deals with the self-healing phenomenon in graphene and its correspond-
ing applications in the phenomenon of sub-nano sensor design. The chapter gives
an overview of the interesting phenomenon of magnetic phase transitions (MPTs)
detected under the collective impact of an electric field and temperature leading
to the thermo-electromagnetic effect and provides insights into the intrinsic MPTs
in graphene. The chapter also gives an overview of such emerging applications of
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