Microwave Active Devices and Circuits for Communication

700 Pages·2019·24.94 MB·English

by  Subhash Chandra Bera

Lecture Notes in Electrical Engineering 533
Subhash Chandra Bera
Microwave
Active Devices
and Circuits for
Communication
Lecture Notes in Electrical Engineering
Volume 533
Board of Series editors
Leopoldo Angrisani, Napoli, Italy
Marco Arteaga, Coyoacán, México
Bijaya Ketan Panigrahi, New Delhi, India
Samarjit Chakraborty, München, Germany
Jiming Chen, Hangzhou, P.R. China
Shanben Chen, Shanghai, China
Tan Kay Chen, Singapore, Singapore
Ruediger Dillmann, Karlsruhe, Germany
Haibin Duan, Beijing, China
Gianluigi Ferrari, Parma, Italy
Manuel Ferre, Madrid, Spain
Sandra Hirche, München, Germany
Faryar Jabbari, Irvine, USA
Limin Jia, Beijing, China
Janusz Kacprzyk, Warsaw, Poland
Alaa Khamis, New Cairo City, Egypt
Torsten Kroeger, Stanford, USA
Qilian Liang, Arlington, USA
Tan Cher Ming, Singapore, Singapore
Wolfgang Minker, Ulm, Germany
Pradeep Misra, Dayton, USA
Sebastian Möller, Berlin, Germany
Subhas Mukhopadhyay, Palmerston North, New Zealand
Cun-Zheng Ning, Tempe, USA
Toyoaki Nishida, Kyoto, Japan
Federica Pascucci, Roma, Italy
Yong Qin, Beijing, China
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Germano Veiga, Porto, Portugal
Haitao Wu, Beijing, China
Junjie James Zhang, Charlotte, USA
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Subhash Chandra Bera
Microwave Active Devices
and Circuits
for Communication
123
SubhashChandra Bera
Space Applications Centre
IndianSpaceResearchOrganization(ISRO)
Ahmedabad, Gujarat, India
ISSN 1876-1100 ISSN 1876-1119 (electronic)
Lecture Notesin Electrical Engineering
ISBN978-981-13-3003-2 ISBN978-981-13-3004-9 (eBook)
https://doi.org/10.1007/978-981-13-3004-9
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To Him
who gives me inspiration and patience
Foreword
Ithasbeenapleasureformetoseethisbooktitled‘MicrowaveActiveDevicesand
Circuits for Communication’ written by Subhash Chandra Bera based on his long
experienceonthedesignanddevelopmentofon-boardcommunicationcircuitsand
systems at Space Applications Centre, ISRO, Ahmedabad.
Thisbookprovidesextensivecoverageinthefieldofmicrowaveengineeringfor
graduatestudents,practicalcircuitdesignersandresearchers.Thisbookbeginswith
basics of device physics and ends with the design of microwave communication
systems through detailed design, analysis and realization of different circuits and
systems. Apart from classical topics in microwave active devices such as p-i-n
diode, Schottky diode, step recovery diode, BJT, HBT, MESFET, HFET and
various microwave circuits such as switch, phase shifter, attenuator, amplifier,
multiplier, mixer, the coverage extends to some modern topics such as Class-F
power amplifier, direct frequency modulator, linearizer, equalizer. The written text
ofeachtopicissupplementedwithsuitablediagrams,andeachchapterhasvarious
types of solved problems for clear understanding.
It is hoped that this book will be very useful for graduate students, circuit
designers and researchers.
Ahmedabad, India Tapan Misra
May 2018 Distinguished Scientist
Director, Space Applications
Centre (ISRO)
vii
Preface
This book is about active devices and circuits for microwave communications
appropriateforundergraduateandpostgraduatestudents,practicalcircuitdesigners
and researchers in the field of electronics and communication engineering. It pre-
sentsthedesignandanalysisofvariouslinearandnonlinearcircuitsformicrowave
communication systems after discussing the working principle and behaviour of
microwave diodes and transistors. This book begins with the basics of device
physics and ends with the design of microwave communication systems through
detailed design, analysis and realization of different circuits and systems. Though
this bookiswrittenfocusingon microwavecommunications,much ofthematerial
ofthisbookisentirelygenericandwillbeusefulforothermicrowaveapplications.
This book starts with describing the diodes which are omnipresent in all
solid-statecircuitsacrossallthefrequencyrangesstartingfromDCtoterahertzeven
extending to optical frequency range as an isolated diode or as a part of other
devices. Proper understanding about diodes leads to ease of understanding about
other devices such as different types of bipolar and unipolar transistors in their
homo-junction and hetero-junction structures which are discussed subsequently.
Schottky, p-i-n, step recovery and tunnel diodes are popularly used in linear and
nonlinear microwave communication circuits such as variable attenuator, power
limiter,phaseshifter,linearizer,frequencymultiplier,mixerfortheirhigh-frequency
performance and simplicity in operation. With the advancement of material tech-
nologies, there are various modern transistors such as hetero-junction bipolar and
field effect transistors based on GaAs, InP and GaN technologies. These devices
offer very high-frequency performance with low noise figure and high-power-
handlingcapabilitieswithdifferentdevicestructuresandcircuitconfigurations.DC
biasingcircuitsforthediodesandtransistorsareveryrelevantwhichdeterminethe
RF performance including temperature behaviour of the circuits. This book also
addresses the temperature behaviour and compensation mechanism of the micro-
wave circuits for practical applications.
ix
x Preface
Thisbookhasevolvedfromtheauthor’sdesignanddevelopmentexperienceon
microwavecircuitsandsystemsforIndiannationalsatellitecommunicationsystems
at Space Applications Center, Indian Space Research Organization (ISRO), India.
This book is believed to be a useful one for students and microwave circuit
designers. Any suggestions for improvement of the quality of this book would be
highly appreciated.
Ahmedabad, India Subhash Chandra Bera
Contents
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 Microwave Communications . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.2 Microwave Active Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.3 Microwave Active Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
1.4 Microwave Circuit Analysis and Measurements . . . . . . . . . . . . 9
1.5 Book Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2 P-I-N Diode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.2 Basics of P-I-N Diode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2.3 P-I-N Diode Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.4 Nonlinearity of P-I-N Diode . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2.5 Temperature Behaviour of P-I-N Diode . . . . . . . . . . . . . . . . . . 20
2.6 Temperature-Invariant RF Resistance of P-I-N Diode . . . . . . . . 22
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3 Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
3.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
3.2 Basics of Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
3.3 Schottky Diode Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 36
3.4 Temperature Behaviour of Schottky Diodes . . . . . . . . . . . . . . . 39
3.5 Temperature Invariant RF Resistance. . . . . . . . . . . . . . . . . . . . 41
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
4 Special Microwave Diodes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
4.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
4.2 Step Recovery Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
4.2.1 Characteristic of SRD. . . . . . . . . . . . . . . . . . . . . . . . . 49
xi