L:\datasheet release\Apm\Apm491

14 Pages·2006·0.25 MB·English

APM4910K
Dual N-Channel Enhancement Mode MOSFET
Features Pin Description
• Channel 1
30V/7A,
R = 22mW (typ.) @ V = 10V
DS(ON) GS
R = 26mW (typ.) @ V = 4.5V
DS(ON) GS
• Channel 2
30V/10A, Top View of SOP - 8
R = 12mW (typ.) @ V =10V
DS(ON) GS
R = 16mW (typ.) @ V =4.5V D1 S1/D2
DS(ON) GS (1)(2) (5)(6)(7)
• Super High Dense Cell Design
• Reliable and Rugged
G1(8)
• Lead Free Available (RoHS Compliant)
G2
Applications (3)
•
Power Management in Notebook Computer,
S2(4)
Portable Equipment and Battery Powered
N-Channel MOSFET
Systems
Ordering and Marking Information
Package Code
APM4910
K : SOP-8
Lead Free Code Operating Junction Temp. Range
(cid:176)
C : -55 to 150 C
Handling Code
Handling Code
Temp. Range TU : Tube TR : Tape & Reel
Package Code Lead Free Code
L : Lead Free Device
APM4910 K : APM4910
XXXXX - Date Code
XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ª ANPEC Electronics Corp. 1 www.anpec.com.tw
Rev. A.1 - Oct., 2006
APM4910K
Absolute Maximum Ratings (T = 25(cid:176) C unless otherwise noted)
A
Symbol Parameter Channel 1 Channel 2 Unit
V Drain-Source Voltage 30 30
DSS
V
V Gate-Source Voltage ±16 ±20
GSS
I * Continuous Drain Current 7 10
D
A
I * Pulsed Drain Current 25 35
DM
I * Diode Continuous Forward Current 2.5 3 A
S
T Maximum Junction Temperature 150
J
°C
T Storage Temperature Range -55 to 150
STG
T =25°C 2
A
P * Power Dissipation W
D
T =100°C 0.8
A
Rq JA* Thermal Resistance-Junction to Ambient 62.5 °C/W
Note:
*Surface Mounted on 1in2 pad area, t £ 10sec.
Copyright ª ANPEC Electronics Corp. 2 www.anpec.com.tw
Rev. A.1 - Oct., 2006
APM4910K
Electrical Characteristics (T = 25(cid:176) C unless otherwise noted)
A
Channel 1
Channel 1
Symbol Parameter Test Condition Unit
Min. Typ. Max.
Static Characteristics
BV Drain-Source Breakdown Voltage V =0V, I =250m A 30 V
DSS GS DS
V =24V, V =0V 1
I Zero Gate Voltage Drain Current DS GS m A
DSS
T =85°C 30
J
V Gate Threshold Voltage V =V , I =250m A 1 1.5 2 V
GS(th) DS GS DS
I Gate Leakage Current V =±16V, V =0V ±100 nA
GSS GS DS
V =10V, I =7A 22 28
R a Drain-Source On-state Resistance GS DS mW
DS(ON)
V =4.5V, I =5A 26 34
GS DS
V a Diode Forward Voltage I =2.5A, V =0V 0.8 1.1 V
SD SD GS
Gate Charge Characteristics b
Q Total Gate Charge 10 14
g
V =15V, V =4.5V,
Q Gate-Source Charge DS GS 1.5 nC
gs I =7A
DS
Q Gate-Drain Charge 5
gd
Dynamic Characteristics b
R Gate Resistance V =0V,V =0V,F=1MHz 1.5 W
G GS DS
C Input Capacitance 880
iss V =0V,
GS
C Output Capacitance V =15V, 125 pF
oss DS
Frequency=1.0MHz
C Reverse Transfer Capacitance 90
rss
t Turn-on Delay Time 6 12
d(ON)
V =15V, R =15W ,
t Turn-on Rise Time DD L 11 21
r
I =1A, V =10V, ns
DS GEN
td(OFF) Turn-off Delay Time R =6W 27 50
G
t Turn-off Fall Time 5 10
f

Notes:
a : Pulse test ; pulse width£ 300m s, duty cycle£ 2%.
b : Guaranteed by design, not subject to production testing.
Copyright ª ANPEC Electronics Corp. 3 www.anpec.com.tw
Rev. A.1 - Oct., 2006
APM4910K
Electrical Characteristics (Cont.) (T = 25(cid:176) C unless otherwise noted)
A
Channel 2
Channel 2
Symbol Parameter Test Condition Unit
Min. Typ. Max.
Static Characteristics
BV Drain-Source Breakdown Voltage V =0V, I =250m A 30 V
DSS GS DS
V =24V, V =0V 50 m A
DS GS
I Zero Gate Voltage Drain Current
DSS
T =85°C 5 mA
J
V Gate Threshold Voltage V =V , I =250m A 1.3 1.8 2.5 V
GS(th) DS GS DS
I Gate Leakage Current V =±20V, V =0V ±100 nA
GSS GS DS
V =10V, I =10A 12 15
R a Drain-Source On-state Resistance GS DS mW
DS(ON)
V =4.5V, I =7A 16 21
GS DS
V a Diode Forward Voltage I =1A, V =0V 0.52 V
SD SD GS
Gate Charge Characteristics b
Q Total Gate Charge 16 22
g
V =15V, V =4.5V,
Q Gate-Source Charge DS GS 3.7 nC
gs I =10A
DS
Q Gate-Drain Charge 8.5
gd
Dynamic Characteristics b
R Gate Resistance V =0V,V =0V,F=1MHz 1.7 W
G GS DS
C Input Capacitance 1610
iss V =0V,
GS
C Output Capacitance V =15V, 255 pF
oss DS
Frequency=1.0MHz
C Reverse Transfer Capacitance 160
rss
t Turn-on Delay Time 10 19
d(ON)
V =15V, R =15W ,
t Turn-on Rise Time DD L 11 21
r
I =1A, V =10V, ns
DS GEN
td(OFF) Turn-off Delay Time R =6W 39 71
G
t Turn-off Fall Time 12 23
f

Notes:
a : Pulse test ; pulse width£ 300m s, duty cycle£ 2%.
b : Guaranteed by design, not subject to production testing.
Copyright ª ANPEC Electronics Corp. 4 www.anpec.com.tw
Rev. A.1 - Oct., 2006
APM4910K
Typical Characteristics
Channel 1
Power Dissipation Drain Current

2.5 8
2.0
6
)
A
er (W) 1.5 urrent (
w C 4
- Po ot 1.0 Drain
Pt - D
I 2
0.5
T=25oC T=25oC,V =10V
0.0 A 0 A G
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

T- Junction Temperature (°C) T- Junction Temperature (°C)
j j
Safe Operation Area Thermal Transient Impedance

100 e 2
c
n
sta 1 Duty = 0.5
si
e
urrent (A) 10 Rds(on) Limit 310m0uss Thermal R 0.1 0.050.1 0.2
n C 1 nt 0.02
Drai 10ms nsie 0.01
- D 100ms Tra
I d 0.01
0.1 1s ze Single Pulse
DC ali
m
r
o Mounted on 1in2 pad
N
T=25OC R : 62.5 oC/W
0.01 A 1E-3 qJA
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 30

V - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)
DS
Copyright ª ANPEC Electronics Corp. 5 www.anpec.com.tw
Rev. A.1 - Oct., 2006
APM4910K
Typical Characteristics (Cont.)
Channel 1
Output Characteristics Drain-Source On Resistance

25 40
V = 3.5,4, 4.5, 5, 6, 7, 8, 9, 10V
GS
35
20 )
Wm
(
A) e 30
nt ( 15 anc VGS= 4.5V
e st
urr 3V esi 25
ain C 10 n - R VGS= 10V
Dr O 20
- D - N)
I O
5 S(
RD 15
2.5V
0 10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25
V - Drain-Source Voltage (V) I - Drain Current (A)
DS D
Drain-Source On Resistance Gate Threshold Voltage

60 1.6
I =7A I =250m A
D DS
55
1.4
e
) 50 g
a
Wm olt 1.2
nce ( 4405 old V 1.0
a h
sist 35 res 0.8
e h
R T
- On - S(ON) 223050 Normalized 00..46
D
R 0.2
15
10 0.0
1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)
Copyright ª ANPEC Electronics Corp. 6 www.anpec.com.tw
Rev. A.1 - Oct., 2006
APM4910K
Typical Characteristics (Cont.)
Channel 1
Drain-Source On Resistance Source-Drain Diode Forward

2.00 25
V = 10V
GS
1.75 I = 7A
DS 10
e
c
n 1.50
a
Resist 1.25 nt (A) Tj=150oC
n re
O 1.00 ur
zed ce C 1 Tj=25oC
ali 0.75 ur
m o
S
Nor 0.50 - S
I
0.25
R @T=25oC: 22mW
ON j
0.00 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)
Capac itance Gate Charge
1400 10
Frequency=1MHz V = 15V
9 DS
I = 7A
1200 DS
V) 8
(
)1000 ge 7
F a
e (p 800 Ciss Volt 6
nc e
a c 5
Capacit 600 e - sour 4
C - 400 Gat 3
- S 2
200 Coss VG
1
Crss
0 0
0 5 10 15 20 25 30 0 4 8 12 16 20

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)
Copyright ª ANPEC Electronics Corp. 7 www.anpec.com.tw
Rev. A.1 - Oct., 2006
APM4910K
Typical Characteristics (Cont.)
Channel 2
Power Dissipation Drain Current

2.5 12
10
2.0
)
A
er (W) 1.5 urrent ( 8
w C 6
- Po ot 1.0 Drain
Pt - D 4
I
0.5
2
T=25oC T=25oC,V =10V
0.0 A 0 A G
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

T- Junction Temperature (°C) T- Junction Temperature (°C)
j j
Safe Operation Area Thermal Transient Impedance

100 e 2
c
n
a 1
st Duty = 0.5
nt (A) 10 Rds(on) Limit 300us mal Resi 0.1 0.2
rre 1ms her 0.1 0.05
u T
n C 1 10ms nt 0.02
Drai 100ms nsie 0.01
- D Tra
I 1s d 0.01
0.1 e
z
DC ali Single Pulse
m
r
o Mounted on 1in2 pad
T=25OC N R : 62.5 oC/W
0.01 A 1E-3 qJA
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 30

V - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)
DS
Copyright ª ANPEC Electronics Corp. 8 www.anpec.com.tw
Rev. A.1 - Oct., 2006
APM4910K
Typical Characteristics (Cont.)
Channel 2
Output Characteristics Drain-Source On Resistance

35 22
V = 4, 4.5, 5, 6, 7, 8, 9, 10V
GS
20
30
)
Wm 18
25 (
A) e V = 4.5V
c GS
nt ( an 16
e 20 st
urr 3.5V esi 14
ain C 15 n - R 12 VGS= 10V
Dr O
I- D 10 - ON) 10
S(
D
5 3V R
8
0 6
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 35
V - Drain-Source Voltage (V) I - Drain Current (A)
DS D
Drain-Source On Resistance Gate Threshold Voltage

40 1.8
I = 10A I =250m A
D DS
35 1.6
e
) g
a 1.4
Wm 30 olt
nce ( 25 old V 1.2
a h
sist 20 res 1.0
e h
R T 0.8
- On - S(ON) 1105 Normalized 00..46
D
R
5
0.2
0 0.0
1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)
Copyright ª ANPEC Electronics Corp. 9 www.anpec.com.tw
Rev. A.1 - Oct., 2006
APM4910K
Typical Characteristics (Cont.)
Channel 2
Drain-Source On Resistance Source-Drain Diode Forward

2.0 35
V = 10V
GS
1.8 I = 10A
DS
e
nc 1.6 10 T=150oC
a j
Resist 1.4 nt (A)
n 1.2 re
O ur
ed 1.0 e C Tj=25oC
z c 1
ali ur
m 0.8 o
S
Nor 0.6 - S
I
0.4
R @T=25oC: 12mW
ON j
0.2 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5

Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)
Capac itance Gate Charge
2400 10
Frequency=1MHz V = 15V
2200 9 DS
I = 10A
DS
2000
V) 8
1800 e (
F) 1600 Ciss ag 7
e (p 1400 Volt 6
nc e
a 1200 c 5
cit our
Capa 1080000 e - s 4
C - 600 Gat 3
400 Coss V - GS 2
200 1
Crss
0 0
0 5 10 15 20 25 30 0 4 8 12 16 20 24 28 32

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)
Copyright ª ANPEC Electronics Corp. 10 www.anpec.com.tw
Rev. A.1 - Oct., 2006