Journal of Crystal Growth 2000: Vol 208 Index

11 Pages·2000·1.9 MB·English

vourna.or CRYSTAL
ELSEVIER Journal of Crystal Growth 208 (2000) 813-820
www.elsevier.nl/locate/jcrysgro
Author index
Abrutis, A., see Galindo, V. 208 (2000) 357 Bill, J., see Puchinger, M. 208 (2000) 153
Adachi, G., see Imanaka, N. 208 (2000) 466 Boistelle, R., see Pfefer, G. 208 (2000) 615
Aguilera Morales, S., see Falcon Rodriguez, C. 208 (2000) 651 Brinkman, A.W., see Mullins, J.T. 208 (2000) 211
Aitken, N.M., see Mullins, J.T. 208 (2000) 211 Bucher, E., see Kopecek, R. 208 (2000) 289
Aldinger, F., see Puchinger, M. 208 (2000) 153 Bulutcu, A.N., see Tanrikulu, $.U. 208 (2000) 533
Almuneau, G., E. Hall, S. Mathis and L.A.
Coldren, Accurate control of Sb composi- Cai, L.C., see Chen, H. 208 (20007)9 5
tion in AlGaAsSb alloys on InP substrates Cardoso, L.P., sce Bettini, J. 208 (2000) 65
by molecular beam epitaxy 208 (2000) 113 Carles, J., see Mullins, J.T. 208 (20002)1 1
Ambacher, O., see Kim, J.W. 208 (2000) 37 Chang, J.-H., see Wang, H.-M. 208 (20002)5 3
Arai, K., see Wang, H.-M. 208 (2000) 253 Chen, F., see Wang, H.L. 208 (20001)0 7
Aswal, D.K., T. Mori, Y. Hayakawa and M. Chen, H., see Zhang, S. 208 (20004)8 2
Kumagawa, Growth of Y,_.Nd-Ba,- Chen, H., see Li, Z.Q. 208 (20007)8 6
Cu3O, single crystals 208 (2000) 350 Chen, H., L.C. Cai, C.L. Bao, J.-H. Li, Q.
Ayati, M. and H.E. Lundager Madsen, Crystal- Huang and J.M. Zhou, Two-step method
lization of some heavy-metal phosphates to grow InAs epilayer on GaAs substrate
alone and in the presence of calcium ion 208 (2000) 579 using a new prelayer 208 (2000) 795
Chen, J.-C. and Y.-C. Lee, The influence of
Baba Ali, E., J.C. Bernéde and P. Le Ray, temperature distribution upon the struc-
Vanadium transition metal oxide films ture of LiNbO, crystal rods grown using
obtained by annealing under room atmo- the LHPG method 208 (2000) 508
sphere of metal layers sequentially depos- Chen, X., see Tu, C. 208 (2000) 487
ited 208 (2000) 471 Chen, Y.D., see Zhao, Q.X. 208 (2000) 117
Bacchin, G. and T. Nishinaga, A new way to Chen, Y.F., see Ko, H.J. 208 (2000) 389
achieve both selective and lateral growth Cheng, J.G., see Meng, X.J. 208 (2000) 541
by molecular beam epitaxy: low angle inci- Cheng, X.-C. and T.C. McGill, Molecular
dence microchannel epitaxy 208 (2000) 1 beam epitaxy growth of antimonide ava-
Balkas, C.M., Z. Sitar, L. Bergman, LK. lanche photodetectors with InAs/AISb su-
Shmagin, J.F. Muth, R. Kolbas, R.J. perlattice as the n-type layer 208 (2000) 183
Nemanich and R.F. Davis, Growth and Cheng, Z., see Zhang, S. 208 (2000) 482
characterization of GaN single crystals 208 (2000) 100 Chizhov, I., A. Kahn and G. Scoles, Initial
Bao, C.L., see Chen, H. 208 (2000) 795 growth of 3,4,9,10-perylenetetracarboxy-
Barnett, S.A., see Pillai, M.R. 208 (2000) 79 licdianhydride (PTCDA) on Au(i 1 1):
Bennema, P., see Liu, X.-Y. 208 (2000) 687 a scanning tunneling microscopy study 208 (2000) 449
Bergman, L., see Balkas, C.M. 208 (2000) 100 Choi, B.W. and H.N.G. Wadley, In situ studies
Bergunde, T., see Dauelsberg, M. 208 (2000) 85 of Cd,_-,Zn,Te nucleation and crystal
Bernéde, J.C., see Baba Ali, E. 208 (2000) 471 growth 208 (2000) 219
Bettini, J.. M.M.G. de Carvalho, M.A. Cotta, Choi, I.-H., see Kim, J.W. 208 (2000) 37
M.A.A. Pudenzi, N.C. Frateschi, A. Silva Choi, Y., see Kim, C. 208 (2000) 804
Filho, L.P. Cardoso and R. Landers, Anal- Christides, C., see Kehagias, Th. 208 (2000) 401
ysis of Be doping of InGaP lattice matched Chu, J.H., see Meng, X.J. 208 (2000) 541
to GaAs 208 (2000) 65 Chvoj, Z., see Srikanth, S. 208 (2000) 779
Betzel, C., see Eschenburg, S. 208 (2000) 657 Coldren, L.A., see Almuneau, G. 208 (2000) 113
0022-0248/00/$s-e e front matter © 2000 Elsevier Science B.V. All rights reserved.
PII: S0022-0248(99)00722-8
814 Author index
Collier, A.P., C.J.D. Hetherington and M.J. Fujioka, H., see Ikeda, T. 208 (2000) 395
Hounslow, Alignment mechanisms _ be- Furukawa, Y., see Niwa, K. 208 (2000) 493
tween particles in crystalline aggregates 208 (2000) 513 Furumura, Y., see Kodama, S. 208 (2000) 165
Coriell, S.R., see McFadden, G.B. 208 (2000) 726
Cotta, M.A., see Bettini, J. 208 (2000) 65 Galindo, V., J.P. Sénateur, A. Abrutis, A.
Cournil, M., see Sessiecq, P. 208 (2000) 555 Teiserskis and F. Weiss, High quality
YBa,Cu;0,_;/PrBa,Cu,0,_,; multi-
Dabkowska, H., see Imanaka, N. 208 (2000) 466 layers grown by pulsed injection MOCVD 208 (20003)5 7
Dabkowski, A., see Imanaka, N. 208 (2000) 466 Geisz, J.F., see Friedman, D.J. 208 (2000) 11
Dauelsberg, M., L. Kadinski, Yu.N. Makarov, George, A.E., see Saghir, M.Z. 208 (20003)7 0
T. Bergunde, G. Strauch and M. Weyers, George, A.E., see Labrie, D. 208 (20003)7 9
Modeling and experimental verification of Giege, R., see Lorber, B. 208 (20006)6 5
transport and deposition behavior during Ginovker, A., see Saghir, M.Z. 208 (20003)7 0
MOVPE of Ga,.,In,P in the Planetary Ginovker, A., see Labrie, D. 208 (20003)7 9
Reactor 208 (2000) 85 Glatz, C.E., see Waghmare, R.Y. 208 (20006)7 8
Davis, R.F., see Balkas, C.M. 208 (2000) 100 Goldenstein, H., see Lima, M.S.F. 208 (20007)0 9
De Anda, F., see Olvera-Hernandez, J. 208 (2000) 27 Goldys, E.M., see Paskova, T. 208 (2000) 18
De Carvalho, M.M.G., see Bettini, J. 208 (2000) 65 Gruy, F., see Sessiecq, P. 208 (20005)5 5
De Yoreo, J.J., see Land, T.A. 208 (2000) 623 Guo, S.L., see Meng, X.J. 208 (20005)4 1
Degenhardt, M., see Eschenburg, S. 208 (2000) 657 Guo, S.P., Y. Luo, W. Lin, O. Maksimov,
DeLucas, L.J., see Eschenburg, S. 208 (2000) 657 M.C. Tamargo, I. Kuskovsky, C. Tian and
Desikan, A., see Pillai, M.R. 208 (2000) 79 G.F. Neumark, High crystalline quality
Duan, S., see Lu, D.-C. 208 (2000) 73 ZnBeSe grown by molecular beam epitaxy
Dudley, M., see Su, C.-H. 208 (2000) 237 with Be-Zn co-irradiation 208 (2000) 205
Durbin, S.D., see Yanagiya, S.-i. 208 (2000) 645 Guo, S.P., A. Shen, H. Yasuda, Y. Ohno, F.
Matsukura and H. Ohno, Surfactant effect
Edgar, J.H., see Wei, C.H. 208 (2000) 179 of Mn on the formation of self-organized
Eggington, P.J. and A.G. Taylor, Monitoring InAs nanostructures 208 (2000) 799
crystal dissolution at nanometer resolu-
tion using laser reflectometry 208 (2000) 525 Hall, E., see Almuneau, G. 208 (2000) 113
Eguchi, M., see Ma, M. 208 (2000) 282 Hanada, T., see Wang, H.-M. 208 (2000) 253
Einfeldt, S., see Selke, H. 208 (2000) 57 Hanada, T., see Ko, H.J. _ 208 (20003)8 9
Eroglu, L., see Tanrikulu, S.U. 208 (2000) 533 Hara, K., see Hirose, S. 208 (2000) 49
Eschenburg, S., M. Degenhardt, K. Moore, Hark, S.K., see Zhang, X.B. 208 (2000) 231
L.J. DeLucas, K. Peters, S. Fittkau, W. Hatta, K., see Higuchi, M. 208 (2000) 501
Weber and C. Betzel, Crystallization of Hayakawa, S., see Ikeda, T. 208 (2000) 395
proteinase K complexed with substrate Hayakawa, Y., see Aswal, D.K. 208 (2000) 350
analogue peptides on US space missions He, J. and S. Kou, A new double crucible
STS-91 and STS-95 208 (2000) 657 technique for LEC growth of In-doped
GaAs crystals 208 (2000) 42
Fang, X.M., see Li, C.P. 208 (2000) 423 Heinke, H., see Selke, H. 208 (2000) 57
Falcon Rodriguez, C., S. Aguilera Morales Henry, A., see Paskova, T. 208 (2000) 18
and F. Falcon Rodriguez, Cessation of Hetherington, C.J.D., see Collier, A.P. 208 (2000) 513
growth in crystals 208 (2000) 651 Higuchi, M., K. Hatta, J. Takahashi, K.
Falcon Rodriguez, F., see Falcon Rodriguez, C. 208 (2000) 651 Kodaira, H. Kaneda and J. Saito, Float-
Feltham, D.L. and M.G. Worster, Similarity ing-zone growth of rutile single crystals
solutions describing the melting of a inclined at 48° to the c-axis 208 (2000) 501
mushy layer 208 (2000) 746 Hiraiwa, M., see Imanaka, N. 208 (2000) 466
Feng, S.L., see Wang, H.L. 208 (2000) 107 Hirose, S., H. Ibuka, A. Yoshida, N. Kano, K.
Feth, S., see Su, C.-H. 208 (2000) 237 Hara, H. Munekata and H. Kukimoto,
Fittkau, S., see Eschenburg, S. 208 (2000) 657 Lattice contraction and electrical conduc-
Frateschi, N.C., see Bettini, J. 208 (2000) 65 tion of heavily carbon doped AIAs layers
Friedman, D.J., AG. Norman, J.F. Geisz and grown by atomic layer epitaxy 208 (2000) 49
S.R. Kurtz, Comparison of hydrazine, Ho, W.-J., see Lee, C.-Y. 208 (2000) 137
dimethylhydrazine, and t-butylamine ni- Hommel, D., see Selke, H. 208 (2000) 57
trogen sources for MOVPE growth of Hotzel, J., see Kopecek, R. 208 (2000) 289
GaInNAs for solar cells 208 (2000) 11 Hou, J.G., see Xu, W. 208 (2000) 365
Author index
Hounslow, M.J., see Collier, A.P. 208 (2000) 513 of anisotropic domain tilting along verti-
Hozawa, M., see Kobayashi, M. 208 (2000) 459 cal growth direction in selectively lateral
Hsu, C.-T., Growth of ZnS : Tm thin films by overgrown GaN by hydride vapor phase
MOCVD 208 (2000) 259 epitaxy 208 (2000) 804
Huang, D.D., see Liu, J.P. 208 (2000) 322 Kim, J.W., C.-S. Son, I.-H. Choi, Y.K. Park,
Huang, Q., see Li, Z.Q. 208 (2000) 786 Y.T. Kim, O. Ambacher and M. Stutz-
Huang, Q., see Chen, H. 208 (2000) 795 mann, Structural properties of Al.Ga,_,.N
Huang, Y., see Tu, C. 208 (2000) 487 grown on sapphire by molecular beam
epitaxy 208 (2000) 37
Ibuka, H., see Hirose, S. 208 (2000) 49 Kim, K.-J., Spherulitic crystallization of 3-
Ikeda, T., H. Fujioka, S. Hayakawa, K. Ono, nitro-1,2,4-triazol-S-one in water + N-
M. Oshima, M. Yoshimoto, H. Maruta, H. methyl-2-pyrrolidone 208 (2000) 569
Koinuma, K. Inaba and R. Matsuo, Epi- Kim, M.H., see Kim, C. 208 (2000) 804
taxial growth of MnAs on single-crystal- Kim, S., see Kim, C. 208 (2000) 804
line Mn-Zn ferrite substrates 208 (2000) 395 Kim, S.T., see Kim, C. 208 (2000) 804
Imanaka, N., M. Hiraiwa, S. Tamura, G.
Kim, Y.T., see Kim, J.W. 208 (2000) 37
Adachi, H. Dabkowska and A. Dab-
Kimura, M., see Tanaka, A. 208 (2000) 33
kowski, Solid solution single crystal
Kinoshita, K., see Kodama, S. 208 (2000) 165
growth of the aluminum tungstate-scan-
Kirchner, V., see Selke, H. 208 (2000) 57
dium tungstate system by a modified CZ
method 208 (2000) 466 Kitamura, K., see Niwa, K. 208 (2000) 493
Inaba, K., see Ikeda, T. 208 (2000) 395 Ko, H.J., Y.F. Chen, Z. Zhu, T. Hanada and T.
Inomoto, Y., see Sakata, Y. 208 (2000) 130 Yao, Effects of a low-temperature buffer
Ishikawa, H., see Nakata, Y. 208 (2000) 93 layer on structural properties of ZnO epi-
Ishikawa, H., see Nishijima, Y. 208 (2000) 171 layers grown on (1 1 1)CaF, by two-step
Izumi, N., see Tanaka, A. 208 (2000) 33 MBE 208 (2000) 389
Kobayashi, M., T. Tsukada and M. Hozawa,
Janzén, E., see Syvajarvi, M. 208 (2000) 409 Effect of internal radiative heat transfer on
Jiang, A., see Tu, C. 208 (2000) 487 transition of flow modes in CZ oxide melt 208 (2000) 459
Jones, C.M., M.A. Larson, R.I. Ristic and J.N. Kodaira, K., see Higuchi, M. 208 (2000) 501
Sherwood, The role of dislocations, inte- Kodama, S., Y. Furumura, K. Kinoshita, H.
gral strain, and supersaturation on the Kato and S. Yoda, Single crystalline bulk
growth rates of sodium nitrate 208 (2000) 520 growth of Ing ,Gao.7As on GaAs seed using
Jones, H., see Juarez-Hernandez, A. 208 (2000) 442 the multi-component zone melting method 208 (2000) 165
Juarez-Hernandez, A. and H. Jones, Growth Koinuma, H., see Ikeda, T. 208 (2000) 395
temperatures and microstructure selection Kolbas, R., see Balkas, C.M. 208 (2000) 100
during Bridgman solidification of hy- Komatsu, H., see Suzuki, Y. 208 (2000) 638
pereutectic Al-La and Al-Ce alloys 208 (2000) 442 Komatsu, H., see Yanagiya, S.-i. 208 (2000) 645
Komatsu, K., see Sakata, Y. 208 (2000) 130
Kadinski, L., see Dauelsberg, M. 208 (2000) 85 Komninou, Ph., see Kehagias, Th. 208 (2000) 401
Kahn, A., see Chizhoy, I. 208 (20004)4 9 Kong, M.Y., see Liu, J.P. 208 (2000) 322
Kakimoto, K., see Wang, Y. 208 (20003)0 3 Kong, M.Y., see Zhuang, Q.D. 208 (2000) 791
Kaneda, H., see Higuchi, M. 208 (20005)0 1
Kopecek, R., K. Peter, J. HOtzel and E. Bucher,
Kano, N., see Hirose, S. 208 (2000) 49
Structural and electrical properties of sili-
Karakostas, Th., see Kehagias, Th. 208 (20004)0 1
con epitaxial layers grown by LPE on high-
Karlsteen, M., see Zhao, Q.X. 208 (20001)1 7 ly resistive monocrystalline substrates 208 (2000) 289
Karpov, S.Yu., see Segal, A.S. 208 (20004)3 1
Kou, S., see He, J. 208 (2000) 42
Kato, H., see Kodama, S. 208 (20001)6 5
Kukimoto, H., see Hirose, S. 208 (2000) 49
Katsui, A., see Matsushita, H. 208 (20004)1 6
Kavanagh, K.L., see Xin, H.P. 208 (20001)4 5 Kulish, N.P., see Nakhodkin, N.G. 208 (2000) 297
Kehagias, Th., Ph. Komninou, C. Christides, Kumagawa, M., see Aswal, D.K. 208 (2000) 350
Kurtz, S.R., see Friedman, D.J. 208 (2000) 11
G. Nouet, S. Stavroyiannis and Th.
Karakostas, Growth of fcc Co in sputter- Kurz, M. and G. Miiller, Control of thermal
deposited Co/Au multilayers with (1 1 1) conditions during crystal growth by in-
texture 208 (2000) 401 verse modeling 208 (2000) 341
Kim, C., J. Yi, S. Kim, M.H. Kim, M. Yang, Y. Kuskovsky, I., see Guo, S.P. 208 (2000) 205
Choi, T.-K. Yoo and S.T. Kim, Relaxation Kvam, E.P., see Pillai, M.R. 208 (2000) 79
816 Author index
Labrie, D., see Saghir, M.Z. 208 (2000) 370 Liu, H.-S., see Wu, N.-C. 208 (2000) 189
Labrie, D., A.E. George, A.M. Simpson, B.E. Liu, H.F., see Li, Z.Q. 208 (2000) 786
Paton, A. Ginovker and M.Z. Saghir, Char- Liu, J.P., D.D. Huang, J.P. Li, Y.X. Lin, D.Z.
acterization of CdGeAs, grown by the float Sun and M.Y. Kong, Doping during low-
zone technique under microgravity 208 (2000) 379 temperature growth of materials for n-p-n
Lan, C.W. and M.C. Liang, Three-dimen- Si/SiGe/Si heterojuction bipolar transistor
sional simulation of vertical zone-melting by gas source molecular beam epitaxy 208 (2000) 322
crystal growth: symmetry breaking to mul- Liu, S., see Li, Z.Q. 208 (2000) 786
tiple states 208 (2000) 327 Liu, X., see Zhang, S. 208 (2000) 482
Lan, C.W., M.C. Su and M.C. Liang, A visual- Liu, X.-Y., M. Wang, D.-W. Li, C.S. Strom, P.
ization and computational study of hori- Bennema and N.-B. Ming, Nucleation-lim-
zontal Bridgman crystal growth 208 (2000) 717 ited aggregation of crystallites in fractal
Land, T.A. and J.J. De Yoreo, The evolution growth 208 (2000) 687
of growth modes and activity of growth Liu, X.Q., see Zhao, Q.X. 208 (2000) 117
sources on canavalin investigated by in Lorber, B., J.D. Ng, P. Lautenschlager and R.
situ atomic force microscopy 208 (2000) 623 Giege, Growth kinetics and motion of
Landers, R., see Bettini, J. 208 (2000) 65 thaumatin crystals during USML-2 and
Lange, F.F., see Puchinger, M. 208 (2000) 153 LMS microgravity missions and compari-
Larson, M.A., see Jones, C.M. 208 (2000) 520 son with earth controls 208 (2000) 665
Larson, M.A., see Waghmare, R.Y. 208 (2000) 678 Lu, D.-C. and S. Duan, Quasi-thermodynamic
Lautenschlager, P., see Lorber, B. 208 (2000) 665 analysis of MOVPE of AlGaN 208 (2000) 73
Le Ray, P., see Baba Ali, E. 208 (2000) 471 Lu, W., see Zhao, Q.X. 208 (2000) 117
Lee, C.-Y., M.-C. Wu, H.-P. Shiao and W.-J. Lundager Madsen, H.E., see Ayati, M. 208 (2000) 579
Ho, Temperature dependence of photo- Luo, Y., see Guo, S.P. 208 (2000) 205
luminescence from InAsP/InP strained Luo, Z., see Tu, C. 208 (2000) 487
quantum well structures grown by meta-
lorganic chemical vapor deposition 208 (2000) 137 Ma, M., N. Nango, T. Ogawa, M. Watanabe
Lee, T.-W., see Moon, Y. 208 (2000) 160 and M. Eguchi, Study on defects in
Lee, Y.-C., see Chen, J.-C. 208 (2000) 508 EMCZ-Si crystal by infrared light scatter-
Lehoczky, S.L., see Su, C.-H. 208 (2000) 237 ing tomography 208 (2000) 282
Leonartz, K., see Suk, M.-J. 208 (2000) 809 Ma, N. and J.S. Walker, A parametric study of
Li, B., see Meng, X.J. 208 (2000) 541 segregation effects during vertical Bridg-
Li, C.P., P.J. McCann and X.M. Fang, Strain man crystal growth with an axial magnetic
relaxation in PbSnSe and PbSe/PbSnSe field 208 (2000) 757
layers grown by liquid-phase epitaxy on Maeda, T., see Matsushita, H. 208 (2000) 416
(1 0 0)-oriented silicon 208 (2000) 423 Mah, K.W., see Yoon, S.F. 208 (2000) 197
i, D.-W., see Liu, X.-Y. 208 (2000) 687 Makarov, Yu.N., see Dauelsberg, M. 208 (2000) 85
i, J.H., see Li, Z.Q. 208 (2000) 786 Makarov, Yu.N., see Segal, A.S. 208 (2000) 431
i, J.H., see Chen, H. 208 (2000) 795 Makkonen, L., Spacing in solidification of
i, J.M., see Zhuang, Q.D. 208 (2000) 791 dendritic arrays 208 (20007)7 2
i, J.P., see Liu, J.P. 208 (2000) 322 Maksimov, O., see Guo, S.P. 208 (20002)0 5
i, Q.-f., see Zhu, S.-f. 208 (2000) 264 Maruta, H., see Ikeda, T. 208 (20003)9 5
i, W.-J.. E.-W. Shi, and Z.-W. Yin, Growth Mathis, S., see Almuneau, G. 208 (20001)1 3
habit of rutile and a-Al,O, crystals 208 (2000) 546 Matsukura, F., see Guo, S.P. 208 (20007)9 9
i, Z.Q., H. Chen, H.F. Liu, J.H. Li, L. Wan, S. Matsuo, R., see Ikeda, T. 208 (20003)9 5
Liu, Q. Huang and J.M. Zhou, MBE Matsushita, H., T. Maeda, A. Katsui and T.
growth and X-ray study of high-quality Takizawa, Thermal analysis and synthesis
cubic-GaN on GaAs(00 1) 208 (2000) 786 from the melts of Cu-based quaternary
Liang, M.C., see Lan, C.W. 208 (2000) 327 compounds Cu-III-IV-VI, and Cu,-II-
Liang, M.C., see Lan, C.W. 208 (2000) 717 IV-VI, (I1 = Zn, Cd; IT = Ga, In; IV =
Lima, lvi.S7r. and H. Goldenstein, Mor- Ge, Sn; VI = Se) 208 (2000) 416
phological instability of the austenite Matyi, R., see Su, C.-H. 208 (2000) 237
growth front in a laser remelted iron-car- Mauri, A. and M. Moret, Growth of potassi-
bon-silicon alloy 208 (2000) 709 um sulfate crystals in the presence of or-
Lin, L.Y., see Zhuang, Q.D. 208 (2000) 791 ganic dyes: in situ characterization by
Lin, W., see Guo, S.P. 208 (2000) 205 atomic force microscopy 208 (2000) 599
Lin, Y.X., see Liu, J.P. 208 (2000) 322 McCann, P.J., see Li, C.P. 208 (2000) 423
Author index
McFadden, G.B. S.R. Coriell and R.F. Nishijima, Y., K. Nakajima, K. Otsubo and H.
Sekerka, Analytic solution for a non- Ishikawa, InGaAs single crystal with
axisymmetric isothermal dendrite 208 (2000) 726 a uniform composition in the growth di-
McGill, T.C., see Cheng, X.-C. 208 (2000) 183 rection grown on an InGaAs seed using
Meng, X.J., J.G. Cheng, B. Li, S.L. Guo, H.J. the multicomponent zone growth method 208 (2000) 171
Ye and J.H. Chu, Low-temperature prep- Nishinaga, T., see Bacchin, G. 208 (2000) 1
aration of highly( 1 1 1) oriented PZT thin Niwa, K., Y. Furukawa, S. Takekawa and
films by a modified sol-gel technique 208 (2000) 541 K. Kitamura, Growth and characteriza-
Millan, A., New method for the production of tion of MgO doped near stoichiometric
silver halide tabular crystals 208 (20005)9 2 LiNbO; crystals as a new nonlinear
Ming, N.-B., see Liu, X.-Y. 208 (20006)8 7 optical material 208 (2000) 493
Mishurnyi, V.A., see Olvera-Hernandez, J. 208 (2000) 27 Norman, A.G., see Friedman, D.J. 208 (2000) 11
Miyashita, S., see Suzuki, Y. 208 (20006)3 8 Nouet, G., see Kehagias, Th. 208 (2000) 401
Miyashita, S., see Yanagiya, S.-i. 208 (20006)4 5
Mokhov, E.N., see Segal, A.S. 208 (20004)3 1 Ogawa, T., see Ma, M. 208 (2000) 282
Monemar, B., see Paskova, T. 208 (2000) 18 Ohno, H., see Guo, S.P. 208 (2000) 799
Ohno, Y., see Guo, S.P. 208 (2000) 799
Moon, Y., T.-W. Lee, S. Yoon, K. Yoo and E.
Ohsaka, K., see Rhim, W.-K. 208 (2000) 313
Yoon, Observation of two independent
sources for arsenic carryover 208 (20001)6 0 Ohtsubo, K., see Nakata, Y. 208 (2000) 93
Olson, K., see Saghir, M.Z. 208 (2000) 370
Moore, K., see Eschenburg, S. 208 (20006)5 7
Moret, M., see Mauri, A. 208 (20005)9 9 Olvera-Hernandez, J., F. de Anda, H. Na-
varro-Contreras and V.A. Mishurnyi,
Mori, T., see Aswal, D.K. 208 (20003)5 0
High purity GaSb grown by LPE ina sap-
Motokawa, M., see Yanagiya, S.-i. 208 (20006)4 5
phire boat 208 (2000) 27
Mukai, K., see Nakata, Y. 208 (2000) 93
Ono, K.., see Ikeda, T. 208 (2000) 395
Miller, G., see Kurz, M. 208 (20003)4 1 Oshima, M., see Ikeda, T. 208 (2000) 395
Mullins, J.T., J. Carles, N.M. Aitken and A.W. Otsubo, K., see Nishijima, Y. 208 (2000) 171
Brinkman, A novel “multi-tube” vapour Ozkar, S., see Tannkulu, S.U. 208 (2000) 533
growth system and its application to the
growth of bulk crystals of cadmium tellu- Pan, L., see Zhuang, Q.D. 208 (2000) 791
ride 208 (2000) 211 Park, Y.K., see Kim, J.W. 208 (2000) 37
Munekata, H., see Hirose, S. 208 (2000) 49
Paskova, T., E.M. Goldys, R. Yakimova, E.B.
Muth, J.F., see Balkas, C.M. 208 (2000) 100
Svedberg, A. Henry and B. Monemar, In-
fluence of growth rate on the structure of
Nair, M.T.S., Y. Rodriguez-Lazcano and P.K. thick GaN layers grown by HVPE 208 (2000) 18
Nair, Formation of InSb by annealing Paton, B.E., see Saghir, M.Z. 208 (2000) 370
Sb,S3-In thin films 208 (2000) 248 Paton, B.E., see Labrie, D. 208 (2000) 379
Nair, P.K., see Nair, M.T\S. 208 (2000) 248 Peter, K., see Kopecek, R. 208 (2000) 289
Nakada, T., see Suzuki, Y. 208 (2000) 638 Peters, K., see Eschenburg, S. 208 (2000) 657
Nakajima, K., see Nishijima, Y. 208 (2000) 171 Pfefer, G. and R. Boistelle, Theoretical mor-
Nakajima, K., see Yanagiya, S.-i. 208 (2000) 645 phology of adipic acid crystals 208 (2000) 615
Nakata, Y., K. Mukai, M. Sugawara, K. Oh- Pillai, M.R., S.C. Theiring, S.A. Barnett, B.W.
tsubo, H. Ishikawa and N. Yokoyama, Wessels, A. Desikan and E.P. Kvam, Effect
Molecular beam epitaxial growth of InAs of Sb pre-deposition on the compositional
self-assembled quantum dots with light- profiles in MOVPE-grown InAsSb/InAs
emission at 1.3 um 208 (2000) 93 (1 1 1) multi-quantum wells 208 (2000) 79
Nakhodkin, N.G. N.P. Kulish, T.V. Puchinger, M., T. Wagner, D. Rodewald, J.
Rodionova and A.M. Strutinsky, Phase Bill, F. Aldinger and F.F. Lange, Gallium
modifications in polysilicon films with nitride thin layers via a liquid precursor
fibrous and dendritic structure 208 (2000) 297 route 208 (2000) 153
Nango, N., see Ma, M. 208 (2000) 282 Pudenzi, M.A.A., see Bettini, J. 208 (2000) 65
Navarro-Contreras, H., see Olvera-Hernan-
dez, J. 208 (2000) 27 Qiu, M., see Tu, C. 208 (2000) 487
Nemanich, R.J., see Balkas, C.M. 208 (2000) 100
Neumark, G.F., see Guo, S.P. 208 (2000) 205 Ramachandran, N. and C.-H. Su, Modeling
Ng, J.D., see Lorber, B. 208 (2000) 665 studies of PVT growth of ZnSe: current
Ning, D., see Wang, H.L. 208 (2000) 107 status and future course 208 (2000) 269
818 Author index
Ramachandrarao, P., see Srikanth, S. 208 (2000) 779 Sitar, Z., see Balkas, C.M. 208 (2000) 100
Ramm, M.G., see Segal, A.S. 208 (2000) 431 Sddervall, U., see Zhao, Q.X. 208 (2000) 117
Ramm, M.S., see Segal, A.S. 208 (2000) 431 Son, C.-S., see Kim, J.W. 208 (2000) 37
Randolph, T.W., see Waghmare, R.Y. 208 (2000) 678 Srikanth, S.. P. Ramachandrarao and Z.
Rhim, W.-K. and K. Ohsaka, Thermophysical Chvoj, Limits of constitutional undercool-
properties measurement of molten silicon ing and interfacial liquid compositions
by high-temperature electrostatic levitator: during steady-state directional solidifi-
density, volume expansion, specific heat cation of binary alloys at various interface
capacity, emissivity, surface tension and velocities 208 (2000) 779
viscosity 208 (2000) 313 Stavroyiannis, S., see Kehagias, Th. 208 (2000) 401
Ristic, R.I., see Jones, C.M. 208 (2000) 520 Strauch, G., see Dauelsberg, M. 208 (2000) 85
Rodewald, D., see Puchinger, M. 208 (2000) 153 Strom, C.S., see Liu, X.-Y. 208 (2000) 687
Rodionova, T.V., see Nakhodkin, N.G. 208 (2000) 297 Strutinsky, A.M., see Nakhodkin, N.G. 208 (2000) 297
Rodriguez-Lazcano, Y., see Nair, M.T.S. 208 (2000) 248 Stutzmann, M., see Kim, J.W. 208 (2000) 37
Roenkoy, A.D., see Segal, A.S. 208 (2000) 431 Su, C.-H., M. Dudley, R. Matyi, S. Feth and
Ryder, P.L., see Selke, H. 208 (2000) 57 S.L. Lehoezky, Characterizations of ZnSe
single crystals grown by physical vapor
Saghir, M.Z., D. Labrie, A. Ginovker, B.E. transport 208 (2000) 237
Paton, A.E. George, K. Olson and A.M. Su, C.-H., see Ramachandran, N. 208 (2000) 269
Simpson, Float-zone crystal growth of Su, M.C., see Lan, C.W. 208 (2000) 717
CdGeAs, in microgravity: numerical simu- Sugawara, M., see Nakata, Y. 208 (2000) 93
lation and experiment 208 (2000) 370 Suk, M.-J. and K. Leonartz, Discontinuous
Saghir, M.Z., see Labrie, D. 208 (2000) 379 growth of primary naphthalene plate in
Saito, J., see Higuchi, M. 208 (2000) 501 camphor-naphthalene eutectic system 208 (2000) 809
Sakata, Y., Y. Inomoto and K. Komatsu, Sur- Sukegawa, T., see Tanaka, A. 208 (2000) 33
face migration effect and lateral vapor- Sun, D.Z., see Liu, J.P. 208 (2000) 322
phase diffusion effect for InGaAsP/InP Suzuki, Y., S. Miyashita, G. Sazaki,_ T.
narrow-stripe selective metal-organic va- Nakada, T. Sawada and H. Komatsu, Ef-
por-phase epitaxy 208 (2000) 130 fects of pressure on growth kinetics of tet-
Sawada, T., see Suzuki, Y. 208 (2000) 638 ragonal lysozyme crystals 208 (2000) 638
Sazaki, G., see Suzuki, Y. 208 (2000) 638 Svedberg, E.B., see Paskova, T. 208 (2000) 18
Sazaki, G., see Yanagiya, S.-i. 208 (2000) 645 Syvajarvi, M., R. Yakimova and E. Janzén,
Scoles, G., see Chizhoyv, I. 208 (2000) 449 Cross-sectional cleavages of SiC for evalu-
Segal, A.S., A.N. Vorob’ev, S.Yu. Karpov, E.N. ation of epitaxial layers 208 (2000) 409
Mokhov, M.G. Ramm, M.S. Ramm, A.D.
Roenkov, Yu.A. Vodakov and Yu.N. Takahashi, J., see Higuchi, M. 208 (2000) 501
Makarov, Growth of silicon carbide by Takekawa, S., see Niwa, K. 208 (2000) 493
sublimation sandwich method in the at- Takizawa, T., see Matsushita, H. 208 (2000) 416
mosphere of inert gas 208 (2000) 431 Tamargo, M.C., see Guo, S.P. 208 (2000) 205
Sekerka, R.F., see McFadden, G.B. 208 (2000) 726 Tamura, S., see Imanaka, N. 208 (2000) 466
Selke, H., V. Kirchner, H. Heinke, S. Einfeldt, Tanaka, A.. N. Izumi, M. Kimura and T.
P.L. Ryder and D. Hommel, Polytypism in Sukegawa, Direct observation of LPE het-
epitaxially grown gallium nitride 208 (2000) 57 erogrowth of GaAs on a GaP substrate 208 (2000) 33
Senateur, J.P., see Galindo, V. 208 (2000) 357 Tannkulu, S.U, i. Eroglu, A.N. Bulutcu and
Sessiecq, P., F. Gruy and M. Cournil, Study S. Ozkar, Crystallization kinetics of am-
of ammonium chloride crystallization in monium perchlorate in MSMPR crystal-
a mixed vessel 208 (2000) 555 lizer 208 (2000) 533
Shao, S.-y., see Zhu, S.-f. 208 (2000) 264 Taylor, A.G., see Eggington, P.J. 208 (2000) 525
Shen, A., see Guo, S.P. 208 (2000) 799 Teiserskis, A., see Galindo, V. 208 (2000) 357
Shen, S.C., see Zhao, Q.X. 208 (2000) 117 Theiring, S.C., see Pillai, M.R. 208 (2000) 79
Sherwood, J.N., see Jones, C.M. 208 (2000) 520 Tian, C., see Guo, S.P. 208 (2000) 205
Shi, E.-W., see Li, W.-J. 208 (2000) 546 Tsai, M.-S., see Wu, N.-C. 208 (2000) 189
Shiao, H.-P., see Lee, C.-Y. 208 (2000) 137 Tsukada, T., see Kobayashi, M. 208 (2000) 459
Shmagin, I.K., see Balkas, C.M. 208 (2000) 100 Tu, C., M. Qiu, Y. Huang, X. Chen, A. Jiang
Silva Filho, A., see Bettini, J 208 (2000) 65 and Z. Luo, The study of a self-frequency-
Simpson, A.M., see Saghir, M.Z. 208 (2000) 370 doubling laser crystal Nd?* :
Simpson, A.M., see Labrie, D. 208 (2000) 379 GdAl,(BO3)4 208 (2000) 487
Author index
Tu, C.W., see Xin, H.P. 208 (2000) 145 Xin, H.P., K.L. Kavanagh and C.W. Tu, Gas-
Tuck, B., Diffusion of acceptors in n-type and source molecular beam epitaxial growth
semi-insulating InP 208 (2000) 123 and thermal annealing of GalnNAs/GaAs
quantum wells 208 (2000) 145
Vodakov, Yu.A., see Segal, A.S. 208 (2000) 431 Xu, W. and J.G. Hou, Growing high-quality
Vorob’ev, A.N., see Segal, A.S. 208 (2000) 431 Ceo films by using Sb buffer layer 208 (2000) 365
Wadley, H.N.G., see Choi, B.W. 208 (2000) 219 Yakimova, R., see Paskova, T. 208 (2000) 18
Waghmare, R.Y., J.N. Webb, T.W. Randolph, Yakimova, R., see Syvajarvi, M. 208 (2000) 409
M.A. Larson and C.E. Glatz, Pressure Yanagiya, S.-i. G. Sazaki, $.D. Durbin, S.
dependence of subtilisin crystallization Miyashita, K. Nakajima, H. Komatsu, K.
kinetics 208 (20006)7 8 Watanabe and M. Motokawa, Effects of
Wagner, T., see Puchinger, M. 208 (20001)5 3 a magnetic field on the growth rate of
Walker, J.S., see Ma, N. 208 (20007)5 7 tetragonal lysozyme crystals 208 (2000) 645
Wan, L., see Li, Z.Q. 208 (20007)8 6 Yang, H., see Zhang, S. 208 (2000) 482
Wang, B.Q., see Zhuang, Q.D. 208 (20007)9 1 Yang, M., see Kim, C. 208 (2000) 804
Wang, H., see Wang, H.L. 208 (20001)0 7 Yao, T., see Wang, H.-M. 208 (2000) 253
Wang, H.-M., J.-H. Chang, T. Hanada, K. Yao, T., see Ko, HJ. 208 (2000) 389
Arai and T. Yao, Surface reconstruction Yasuda, H., see Guo, S.P. 208 (2000) 799
and crystal structure of MgSe films grown
Ye, H.J., see Meng, X.J. 208 (2000) 541
on ZnTe substrates by MBE 208 (2000) 253
Yen, F.-S., see Wen, H.-L. 208 (2000) 696
Wang, H.L., D. Ning, H.J. Zhu, F. Chen, H.
Yi, J., see Kim, C. 208 (2000) 804
Wang, X.D. Wang and S.L. Feng, Elec-
Yin, Z.-W., see Li, W.-J. 208 (2000) 546
tronic characteristics of InAs/GaAs self-
Yoda, S., see Kodama, S. 208 (2000) 165
assembled quantum dots by deep level
Yokoyama, N., see Nakata, Y. 208 (2000) 93
transient spectroscopy 208 (2000) 107
Wang, M., see Liu, X.-Y. 208 (2000) 687 Yoo, K., see Moon, Y. 208 (2000) 160
Wang, M.-C., see Wu, N.-C. 208 (2000) 189 Yoo, T.-K., see Kim, C. 208 (2000) 804
Wang, X.D., see Wang, H.L. 208 (2000) 107 Yoon, E., see Moon, Y. 208 (2000) 160
Wang, X.X., see Zhuang, Q.D. 208 (2000) 791 Yoon, S., see Moon, Y. 208 (2000) 160
Wang, Y. and K. Kakimoto, Dislocation effect Yoon, S.F., K.W. Mah, H.Q. Zheng and P.H.
on crystal—melt interface: an in situ obser- Zhang, Effect of V/III ratio and temper-
vation of the melting of silicon 208 (20003)0 3 ature dependence of carrier concentration
Wang, Y.T., see Zhuang, Q.D. 208 (20007)9 1 in partially ordered and disordered
Watanabe, K., see Yanagiya, S.-i. 208 (20006)4 5 Gao.52InNo.4gP grown on GaAs substrates 208 (2000) 197
Watanabe, M., see Ma, M. 208 (20002)8 2 Yoshida, A., see Hirose, S. 208 (2000) 49
Webb, J.N., see Waghmare, R.Y. 208 (20006)7 8 Yoshimoto, M., see Ikeda, T. 208 (2000) 395
Weber, W., see Eschenburg, S. 208 (20006)5 7 Yu, F.-l., see Zhu, S.-f. 208 (2000) 264
Wei, C.H. and J.H. Edgar, Unstable composi-
tion region in the wurtzite B,_,-,Ga,- Zeng, Y.P., see Zhuang, Q.D. 208 (2000) 791
Al,N system 208 (2000) 179 Zhang, P.H., see Yoon, S.F. 208 (2000) 197
Weiss, F., see Galindo, V. 208 (2000) 357 Zhang, S., H. Yang, Z. Cheng, X. Liu and H.
Wen, H.-L. and F.-S. Yen, Growth character- Chen, Crystal growth, thermal and optical
istics of boehmite-derived ultrafine theta properties of SmCa,O(BO3)3 crystal 208 (2000) 482
and alpha-alumina particles during phase Zhang, X.B. and S.K. Hark, Luminescent
transformation 208 (20006)9 6 studies of alloy Zn,Cd, - Se quantum dots
Wessels, B.W., see Pillai, M.R. 208 (2000) 79 grown on ZnSe by metalorganic chemical
Weyers, M., see Dauelsberg, M. 208 (2000) 85 vapor-phase deposition 208 (2000) 231
Willander, M., see Zhao, Q.X. 208 (20001)1 7 Zhao, B.-j., see Zhu, S.-f. 208 (2000) 264
Worster, M.G., see Feltham, D.L. 208 (20007)4 6 Zhao, Q.X., O. Zsebdk, U. Sddervall, M. Kar-
Wu, J., see Zhuang, Q.D. 208 (20007)9 1 Isteen, M. Willander, X.Q. Liu, Y.D. Chen,
Wu, M.-C., see Lee, C.-Y. 208 (20001)3 7 W. Lu and S.C. Shen, GaAs film deposited
Wu, N.-C., M.-S. Tsai, M.-C. Wang and H.-S. on SrTiO; substrate by molecular beam
Liu, The morphology and formation epitaxy 208 (2000) 117
mechanism of aluminum nitride nanocrys- Zheng, H.Q., see Yoon, S.F. 208 (2000) 197
tals synthesized by chemical vapor depos- Zhou, J.M., see Li, Z.Q. 208 (2000) 786
ition 208 (2000) 189 Zhou, J.M., see Chen, H. 208 (2000) 795
820 Author index
Zhu, H.J., see Wang, H.L. 208 (2000) 107 Zhuang, Q.D., J.M. Li, X.X. Wang, Y.P. Zeng,
Zhu, S.-f., B.-j. Zhao, Q.-f. Li, F.-l. Yu, S.-y. Y.T. Wang, B.Q. Wang, L. Pan, J. Wu,
Shao and X.-h. Zhu, Modified growth of M.Y. Kong and L.Y. Lin, Effects of rapid
Cd,_,Zn,Te single crystals 208 (2000) 264 thermal annealing on self-assembled In-
Zhu, X.-h., see Zhu, S.-f. 208 (2000) 264 GaAs/GaAs quantum dots superlattice 208 (2000) 791
Zhu, Z., see Ko, H.J. 208 (2000) 389 Zsebok, O., see Zhao, Q.X. 208 (2000) 117
vourna.or GRYSTAL
GROWTH
ELSEVIER Journal of Crystal Growth 208 (2000) 821-823
www.elsevier.nl/locate/jcrysgro
Subject index
Apparatus - of dissolution 525
- for bulk crystallization of proteins 678 Diodes, see Device characterization
- for Czochralski growth 42 Dissolution, of
- for direct observation of island formation in liquid phase — ammonium chloride 555
epitaxy 33 — crystals 525
- for high frequency electrostatic levitation experiments 313 — protein crystals 645
- for in situ nucleation study of cadmium zinc telluride bulk 219
- for liquid phase epitaxy of silicon 289 Electronic materials, see Device characterization
- for magnetic field assisted deposition of lysozymes 645 Epitaxy, see Thin film growth
- for multiple chamber vapor phase epitaxy growth of cadmium Etching
telluride 211 - chemical 379, 409
- for visualized horizontal Bridgman growth 717
Heterojunctions, see Device characterization
Computer simulation, Monte Carlo method Hydrodynamics, see Convection
- of austenite 717
- of bond energy of adipic acid 615 Kinetics
- of cadmium germanium arsenide float zone microgravity 370 - of aggregation 513
- of compositional profiles 79 - of dissolution 525
- of convection 717 - of growth 65, 79, 365, 442, 520, 533, 555,579, 623, 638, 645, 651,
- of gallium aluminum nitride growth 73 665, 678, 709,799, 809
- of gallium indium phosphide metalorganic chemical vapor - of interface control 79, 160, 303
deposition growth 85 - of nucleation 33, 555, 687
- of heat transfer 459, 717 - of surface poisoning 599
- of inverse modeling 341
- of physical vapor transport of zinc selenide growth 269 Lasers, crystals for
- of vertical zone melting 327 - mid-infrared 423
Constitutional supercooling — neodymium doped gadolinium aluminum borate 487
- of gold-copper alloy 779 Lysozyme 638
Convection 327, 370, 459, 757
Melt growth technique
Dendritic growth - by Bridgman-Stockbarger method
- of aluminum-cerium alloys 442 - - of cadmium zinc telluride 219
- of aluminum-lanthanum alloys 442 - - of silicon germanium 757
- of ammonium chloride 555 - - of sodium nitrate 717
- of camphor 809 - - theory of spacing 772
- of naphthalene 809 - by Czochralski method
Device characterization - - of aluminum tungstate-scandium tungstate 466
- diodes 65 — - of gallium arsenide 42
- electronic materials 11, 57, 145, 289 - - of samarium cobalt oxoborate 482
— heterojunctions 65 - - of silicon under electromagnetic field 282
— quantum structures 65, 93, 107, 137, 145, 231, 791 - by descending ampoule with rotation
Diffusional control - - of cadmium zinc telluride 264
- of acceptors in indium phosphide 123 - by floating zone method
0022-0248/00/$-see front matter © 2000 Elsevier Science B.V. All rights reserved.
PII: S0022-0248(99)00723-X
822 Subject index
— - of cadmium germanium arsenide 370, 379 - - of lead zirconate titanate 541
- - of rutile 501 - - of sodium nitrate 520
- by laser heated pedestal growth - - of 3-nitro-1,2,4-triazol-5-one spherulites 569
- - of thin lithium niobate 508 - by sol-gel method
- by laser remelting - — of ammonium chloride 687
- - of austenite 709 - - of lead zirconate titanate 541
- by uniaxial solidification - by solvent mixing
- — of aluminum-cerium alloys 442 - - of silver halide 592
- - of aluminum-lanthanum alloys 442 - by top seeding method
- — of camphor 809 — - of magnesium oxide doped lithium niobate 493
- - of gold-copper 779 — theory
- - of naphthalene 809 — - of growth 623
- by zone melting - - of melting mushy layers 746
- - of indium gallium phosphide 165, 171 Stefan problem or moving boundary problem
- - theory 327 - of non-axisymmetric isothermal dendrite 726
Microgravity 269, 370, 379, 657, 665 - of physical vapor transport growth of zinc selenide 269
Morphological stability, of Superconductivity materials, high T,
- aluminum nitride 189 - bulk
- ammonium chloride 687 - - of YNdBCO 350
- zine selenide 269 - film
- - of YBCO 357
New crystals, methods Surface structure, energy
- of canavalin 623
— gallium arsenide by low angle incident microchannel epitaxy 1
- gallium arsenide on strontium titanate 117 - of heavy metal phosphates 579
Nucleation 687 - of lysozyme crystals 638
— of ammonium chloride 555 - of potassium sulphate 599
- of silicon 289
- of neodymium barium cuprate 350
Numbers
- Peclet 269, 726 Thin film growth technique
- Raleigh 327, 717 — by annealing
— - of metal oxides 471
Phase diagram - by atomic layer epitaxy
— of neodymium barium cuprate 350 - -— of aluminum arsenide 49
- of 3-nitro-1,2,4-triazol-5-one/N-methyl-2-pyrrolione 569 - by chemical solution precursor
Precursor, for - — of gallium nitride 153
- gallium indium nitride arsenide 11 — by chemical vapor deposition
- - of gallium nitride 18
- - of polysilicon 297
Quantum structures, see Device characterization - by liquid phase epitaxy
Solid growth technique
- - of gallium antimonide 18
- of Ceo 365
- - of gallium arsenide 33
- - of gallium phosphide 33
Solution growth technique - — of lead selenide 423
- by chemical bath method - - of lead tin selenide 423
— — of indium antimonide 248 - - of silicon 289
- by flux method - - of silicon carbide 409
- - of neodymium barium cuprate 350 — by magnetron sputtering
- - of neodymium doped gadolinium aluminum borate 487 - - of copper gold 401
- by high magnetic field - by metalorganic chemical vapor deposition
- - of lysozyme 645 - - of aluminum gallium nitride 73
— by hydrostatic pressure — - of boron gallium aluminum nitride 179
- - of lysozyme 638 — - of gallium arsenide 117
- by hydrothermal method - - of gallium nitride 804
- - of corundum 546 - - of indium arsenide 79, 160
- - of rutile 546 - — of indium arsenide antimonide 79
- by low temperature method - -— of indium arsenide phosphide 137
- - of alpha-alumina particles 696 - - of indium gallium arsenide phosphide 130