Table Of Contentjounnor CRYSTAL
GROWTH
ELSEVIER Journal of Crystal Growth 193 (1998) 739-745
Author index
Addadi, L., see Bromberg, R. 193 (1998) 656 Buff, W., see Piechotka, M. 193 (1998) 80
Amano, C., K. Tateno, H. Takenouchi and Y. Buchanan, M., see Mei, X. 193 (1998) 148
Ohiso, MOVPE growth of C-doped Buka, A., see Gonzalez-Cinca, R. 193 (1998) 712
GaAs/AIAs DBRs for wafer fusion 193 (1998) 460 Buschmann, V., S. Klein, H. FueB and H.
Ammerahl, U., G. Dhalenne, A. Revcolevschi, Hahn, HREM study of 3C-SiC nanopar-
J. Berthon and H. Moudden, Crystal ticles: influence of growth conditions on
growth and characterization of the spin- crystalline quality 193 (1998) 335
ladder compound (Sr,Ca),; 4Cu 404; 193 (1998) 55 Busse, P., F. Deuerler and J. Potschke, The
Anton, R., see Franke, T. 193 (1998) 451 stability of the ODS alloy CMSX6-Al,0,
Aswal, D.K., M. Shinmura, Y. Hayakawa and during melting and solidification under
M. Kumagawa, In situ observation of low gravity 193 (1998) 413
melting/dissolution, nucleation and
growth of NdBa,Cu,O, by high temper- Casademunt, J., see Gonzalez-Cinca, R. 193 (1998) 712
ature optical microscopy 193 (1998) 61 Chen, J.X., A.Z. Li, Q.K. Yang, C. Lin, Y.C.
Ren, S.R. Jin, C.C. Li and M. Qi, Novel
Bakovets, V.V., Growth and wetting angles as Ing. 49Gao.5;P/(In)GaAs/GaAs p-type
the control parameters of crystal shape in modulation doped heterostructure grown
Czochralski method 193 (1998) 720 by gas source molecular beam epitaxy 193 (1998) 28
Ballif, C., see Regula, M. 193 (1998) 109 Chen, Y., L.P. Guo, D.J. Johnson and R.H.
Begarney, M.J., M.L. Warddrip, M.J. Kappers Prince, Plasma-induced low-temperature
and R.F. Hicks, Kinetics of carbon tetrach- growth of graphitic nanofibers on nickel
loride decomposition during the metalor- - substrates 193 (19983)4 2
ganic vapor-phase epitaxy of gallium Cheng, L., see Wang, L. 193 (19984)8 4
arsenide and indium arsenide 193 (19983)0 5 Cheng, L.-S., see Yang, H.-F. 193 (19984)7 8
Behres, A., see Xu, J. 193 (1998) 50 Cheng, X.J., see Xu, J. 193 (1998) 50
Behres, A., see Xu, J. 193 (19987)3 8 Cheng, X.J., see Xu, J. 193 (19986)3 6
Berdiskihk, T., see Mei, X. 193 (19981)4 8 Cheng, X.J., see Xu, J. 193 (19987)3 8
Bernard, M.C., see Furlong, M.J. 193 (19981)1 4 Choi, W.-J., see Kim, I. 193 (19982)9 3
Berthon, J., see Ammerahl, U. 193 (1998) 55 Chow, Y.T., see Zhang, H. 193 (19983)7 0
Bettini, J., see de Castro, M.P.P. 193 (19985)1 0 Cortés, R., see Furlong, M.J. 193 (19981)1 4
Bhat, A.P., see Nagaraja, HS. 193 (19986)7 4 Curreri, P.A., see Sen, S. 193 (19986)9 2
Blanco, A., see Yates, H.M. 193 (1998) 9
Borzs6nyi, T., see Gonzalez-Cinca, R. 193 (19987)1 2 Dapkus, P.D., see Kim, I. 193 (1998) 293
Brandon, S., see Virozub, A. 193 (19985)9 2 Darriet, B., see Brisson, O. 193 (1998) 597
Brisson, O., A. Simonnet and B. Darriet and Dawes, J., see Zhang, H. 193 (1998) 370
J.-C. Launay, Transmission electron De Boer, W.B., see Zhao, Q.X. 193 (1998) 328
microscopy investigation of AgGaSe, De Carvalho, M.M., see de Castro, M.P.P. 193 (1998) 510
single crystals and study of annealing effi- De Castro, M.P.P., N.C. Frateschi, J. Bettini
ciency by electrical conductivity measure- and M.M. de Carvalho, Ino 49Gapo.5;P
ments 193 (1998) 597 growth on pre-patterned GaAs substrates
Bromberg, R., N. Kessler and L. Addadi, Anti- by chemical beam epitaxy 193 (1998) 510
body recognition of specific crystal faces of Deng Peizhen, see Xu Jianwei 193 (1998) 123
1,4-dinitrobenzene 193 (1998) 656 Deng Peizhen, see Xu Ke 193 (1998) 127
0022-0248/98/$ — see front matter © 1998 Elsevier Science B.V. All rights reserved.
PII: S0022-0248(98)00778-7
740 Author index
Deuerler, F., see Busse, P. 193 (1998) 413 Grasza, K., Computational modeling of the
Dhalenne, G., see Ammerahl, U. 193 (1998) 55 low supersaturation nucleation in crystal
Dhindaw, B.K., see Sen, S. 193 (1998) 692 growth by “contactless” physical vapor
Doi, Y., see Iijima, M. 193 (1998) 182 transport 193 (1998) 426
Dour, G., E. Ehret, A. Laugier, D. Sarti, M. Grein, C.H., see Oh, J. 193 (1998) 241
Garnier and F. Durand, Continuous sol- Guillén-Cervantes, A., see Lopez-Lopez, M. 193 (1998) 528
idification of photovoltaic multicrystalline Guo, L.P., see Chen, Y. 193 (1998) 342
silicon from an inductive cold crucible 193 (1998) 230
Drebushchak, V.A., T.A. Kravchenko and Hahn, H., see Buschmann, V. 193 (19983)3 5
V.S. Pavlyuchenko, Synthesis of pure pen- Haidoux, A., see Tomasini, P. 193 (19985)7 2
tlandite in bulk 193 (1998) 728 Han, P.-D., see Yang, H.-F. 193 (19984)7 8
Duan, S.-K., see Yang, H.-F. 193 (1998) 478 Hardikar, S., see Modak, P. 193 (19985)0 1
Durand, F., see Dour, G. 193 (1998) 230 Hayakawa, Y., see Aswal, D.K. 193 (1998) 61
Heime, K., see Xu, J. 193 (1998) 50
Eguchi, M., see Watanabe, M. 193 (1998) 402 Heime, K., see Xu, J. 193 (19987)3 8
Ehret, E., see Dour, G. 193 (1998) 230 Hernandez-Calderon, I., see Lopez-Lopez, M. 193 (19985)2 8
Hernandez-Machado, A., see Gonzalez-Cinca,
Fang Zujie, see Xu Ke 193 (1998) 127 R. 193 (19987)1 2
Feigelson, R.S., see Lee, M. 193 (1998) 347 Hibiya, T., see Watanabe, M. 193 (19984)0 2
Feigelson, R.S., see Lee, M. 193 (1998) 355 Hicks, R.F., see Begarney, M.J. 193 (19983)0 5
Flisch, A., see Piechotka, M. 193 (1998) 90 Hirabayashi, I., see Takagi, A. 193 (1998) 71
Frangois, C.J.P., see Tracy, S.L. 193 (1998) 374 Holtz, P.O., see Zhao, Q.X. 193 (19983)2 8
Franke, T., P. Kreutzer, Th. Zacher, W. Hondoh, T., see Salamatin, A.N. 193 (19981)9 7
Naumann and R. Anton, In situ RHEED, Hong, X., K. Lu, L. Li and D. Tang, Viscosity
AFM, and REM investigations of the sur- and density of BaB,0,4, BaB,O,—NaF and
face recovery of MBE-grown GaAs(0 0 1)- BaB,O,—Na,O melts 193 (1998) 610
layers during growth interruptions 193 (1998) 451 Hozman, J., see Kubinek, R. 193 (1998) 174
Frateschi, N.C., see de Castro, M.P.P. 193 (1998) 510 Hsu, C.-T., Variation with composition of the
Froment, M., see Furlong, M.J. 193 (1998) 114 properties in ZnS,Se, _, 193 (1998) 33
Fu, Z., B. Lin, G. Liao and Z. Wu, The effect of Hsu, T.C., Y. Hsu and G.B. Stringfellow, Effect
Zn buffer layer on growth and lumines- of P precursor on surface structure and
cence of ZnO films deposited on Si sub- ordering in GaInP 193 (1998) 1
strates 193 (1998) 316 Hsu, Y., see Hsu, T.C. 193 (1998) 1
FueB, H., see Buschmann, V. 193 (1998) 335 Huang, D.D., see Liu, J.P. 193 (1998) 535
Fujii, T., see Sekijima, T. 193 (1998) 446 Hudait, M.K., see Modak, P. 193 (1998) 501
Fukuda, T., see Lan, C.W. 193 (1998) 552
Fukuda, T., see Kawaguchi, T. 193 (1998) 605 Iga, R., see Yamamoto, N. 193 (1998) 16
Furlong, M.J., M. Froment, M.C. Bernard, R. lida, K., see Takiguchi, H. 193 (1998) 641
Cortés, A.N. Tiwari, M. Krejci, H. Zogg lijima, M., H. Kamemizu, N. Wakamatsu, T.
and D. Lincot, Aqueous solution epitaxy Goto, Y. Doi and Y. Moriwaki, Effects of
of CdS layers on CulnSe, 193 (1998) 114 Ca addition on the formation of octacal-
Furukawa, Y., see Nabetani, Y. 193 (1998) 470 cium phosphate and apatite in solution at
pH 7.4 and at 37°C 193 (1998) 182
Gallagher, D.T., Q. Pan and G.L. Gilliland, Imaeda, M., see Kawaguchi, T. 193 (1998) 605
Mechanism of ionic strength dependence Ishibashi, A., see Okuyama, H. 193 (1998) 43
of crystal growth rates in a subtilisin vari- Islam, M.R., see Saghir, M.Z. 193 (1998) 623
ant 193 (1998) 665 Itaya, A., see Nagai, Y. 193 (1998) 732
Garnier, M., see Dour, G. 193 (1998) 230
Gill, W.N., see Naik, M.B. 193 (1998) 133 Janzén, E., see Tuominen, M. 193 (1998) 101
Gilliland, G.L., see Gallagher, D.T. 193 (1998) 665 Jennings, H.M., see Tracy, S.L. 193 (1998) 374
Gonzalez-Cinca, R., L. Ramirez-Piscina, Jennings, H.M., see Tracy, S.L. 193 (1998) 382
J.Casademunt, A. Hernandez-Machado, T. Jin, S.R., see Chen, J.X. 193 (1998) 28
Toth-Katona, T. Bérzsényi and A. Buka, Johnson, D.J., see Chen, Y. 193 (1998) 342
Heat diffusion anisotropy in dendritic
growth: phase field simulations and experi- Kadota, Y., see Yamamoto, N. 193 (1998) 16
ments in liquid crystals 193 (1998) 712 Kakanakova-Georgieva, A., see Tuominen,
Goto, T., see Iijima, M. 193 (1998) 182 M. 193 (1998) 101
Author index 741
Kaldis, E., see Piechotka, M. 193 (1998) 80 Kumagawa, M., see Aswal, D.K. 193 (1998) 61
Kaldis, E., see Piechotka, M. 193 (1998) 90 Kuwano, J., see Kayama, M. 193 (1998) 648
Kamemizu, H., see lijima, M. 193 (1998) 182 Kuznetsov, V.A., T.M. Okhrimenko and M.
Kang, G.Y. and J.K. Yoon, The growth of Rak, Growth promoting effect of organic
potassium lithium niobate (KLN) with low impurities on growth kinetics of KAP and
Nb,O, content 193 (1998) 615 KDP crystals 193 (1998) 164
Kappers, M.J., see Begarney, M.J. 193 (1998) 305 Kwon, Y.-S., see Leem, J.-Y. 193 (1998) 491
Kauerauf, B., G. Zimmermann, L. Murmann
and S. Rex, Planar to cellular transition in Lakshmanan, S.K., see Naik, M.B. 193 (1998) 133
the system succinonitrile—acetone during Lan, C.W., S. Uda and T. Fukuda, Theoretical
directional solidification of a bulk sample 193 (1998) 701 analysis of the micro-pulling-down process
Kaukler, W.F., see Sen, S. 193 (1998) 692 for Ge,Si, _, fiber crystal growth 193 (1998) 552
Kawaguchi, T., M. Imaeda and T. Fukuda, Laudise, R.A., see Kloc, Ch. 193 (1998) 563
Selective edge-growth with controlled fer- Laugier, A., see Dour, G. 193 (1998) 230
roelectric-domain structure by liquid- Launey, J.-C., see Brisson, O. 193 (1998) 597
phase epitaxy 193 (1998) 605 Lee, C.-R., J.-Y. Leem, S.-K. Noh, S.-E. Park,
Kayama, M. and J. Kuwano, Effects of the J.-I. Lee, C.-S. Kim, S.-J. Son and K.-Y.
phosphorus-ion additive on the crystal Leem, Characteristics of Mg-doped GaN
habit of the emerald crystals grown from epilayers grown with the variation of Mg
the V,0,—-Li,O-P,0O, fluxes 193 (19986)4 8 incorporation 193 (1998) 300
Kern, R., see Miiller, P. 193 (19982)5 7 Lee, C.-R., see Leem, J.-Y. 193 (1998) 491
193 (19986)5 6 Lee, D.U., see Kim, T.W. 193 (1998) 496
Kessler, N., see Bromberg, R.
Khoo, B.C., see Ma, W.J. 193 (19984)3 0 Lee, J.-I., see Lee, C.-R. 193 (1998) 300
193 (1998) 43 Lee, J.-I., see Leem, J.-Y. 193 (1998) 491
Kijima, S., see Okuyama, H.
193 (1998) 39 Lee, M., R.S. Feigelson and R.K. Route,
Kikuma, I., see Udono, H.
193 (19983)0 0 Growth of lead barium niobate
Kim, C.-S., see Lee, C.-R.
(Pb, _,.Ba,Nb,O,) crystals by the vertical
Kim, I., K. Uppal, W.-J. Choi and P.D. Dap-
Bridgman method. I. Self-seeded growth 193 (1998) 347
kus, Composition control of InGaAsP in
Lee, M. and R:S. Feigelson, Growth of lead
metalorganic chemical vapor deposition
barium niobate (Pb, _ ,Ba,Nb,O,) crystals
using tertiarybutylphosphine and _ terti-
by the vertical Bridgman method. II.
arybutylarsine 193 (1998) 293
Sto.61Bao,39 Nb2O,¢-seeded growth 193 (1998) 355
Kim, T.W., D.U. Lee and Y.S. Yoon, The
Leem, J.-Y., see Lee, C.-R. 193 (1998) 300
interfacial layer formation of the Ag/InP
Leem, J.-Y., C.-R. Lee, J.-I. Lee, S.K. Noh,
heterointerfaces 193 (1998) 496
Y.-S. Kwon, Y.-H. Ryu and S.-J. Son,
Kishi, K., see Yamamoto, N. 193 (1998) 16
Characteristics of Si-doped GaN compen-
Klein, S., see Buschmann, V. 193 (1998) 335 sated with Mg 193 (19984)9 1
Klepetsanis, P.G. and P.G. Koutsoukos, Ki- Leem, K.-Y., see Lee, C.-R. 193 (19983)0 0
netics of calcium sulfate formation in aque- Lévy, F., see Regula, M. 193 (19981)0 9
ous media: effect of organophosphorus
Li, A.Z., see Chen, J.X. 193 (1998) 28
compounds 193 (1998) 156
Li, C.C., see Chen, J.X. 193 (1998) 28
Kloc, Ch. and R.A. Laudise, Vapor pressures
Li, J.P., see Liu, J.P. 193 (19985)3 5
of organic semiconductors: a-hexathio-
Li, L., see Hong, X. 193 (19986)1 0
phene and a-quaterthiophene 193 (19985)6 3
Liao, G., see Fu, Z. 193 (19983)1 6
Komatsu, R., see Sugawara, T. 193 (19983)6 4 Lin, B., see Fu, Z. 193 (19983)1 6
Kondo, Y., see Yamamoto, N. 193 (1998) 16 Lin, C., see Chen, J.X. 193 (1998) 28
Kong, M.Y., see Liu, J.P. 193 (19985)3 5 Lin, L., see Liu, X. 193 (1998) 23
Kou, S., see Lin, M.H. 193 (19984)4 3
Lin, M.H. and S. Kou, Czochralski pulling of
Koutsoukos, P.G., see Klepetsanis, P.G. 193 (19981)5 6 InSb single crystals from a molten zone on
Kravchenko, T.A., see Drebushchak, V.A. 193 (19987)2 8 a solid feed 193 (1998) 443
Krejci, M., see Furlong, M.J. 193 (19981)1 4 Lincot, D., see Furlong, M.J. 193 (1998) 114
Kreutzer, P., see Franke, T. 193 (19984)5 1 Lipenkov, V.Y., see Salamatin, A.N. 193 (1998) 197
Krupanidhi, S.B., see Modak, P. 193 (19985)0 1 Liu, J.P., M.Y. Kong, J.P. Li, X.F. Liu, D.D.
Kubinek, R., J. Hozman and J. Varenka, De- Huang and D.Z. Sun, Low-temperature
ndritic growth in viscous solutions con- growth properties of Si, _,Ge, by disilane
taining organic molecules 193 (1998) 174 and solid-Ge molecular beam epitaxy 193 (1998) 535
742 Author index
Liu, X., D.-C. Lu, L. Wang, X. Wang, D. Wang Nagai, Y., Y. Tsuboi, H. Miyasaka and A.
and L. Lin, The dependence of growth rate Itaya, Effect of applied voltage on aggreg-
of GaN buffer layer on growth parameters ate structure of microcrystals in vacuum-
by metalorganic vapor-phase epitaxy 193 (1998) 23 deposited films of mesogens 193 (1998) 732
Liu, X., see Wang, L. 193 (1998) 484 Nagaraja, H.S., V. Upadhyaya, P. Mohan
Liu, X.F., see Liu, J.P. 193 (1998) 535 Rao, P. Sreeramana Aithal and A.P. Bhat,
Liu, Y., see Lu, T., 193 (1998) 577 Organic nonlinear optical crystals of ben-
Lopez, C., see Yates, H.M. 193 (1998) 9 zoyl glycine 193 (1998) 674
Lopez-Lopez, M., A. Guillen-Cervantes, Z. Naik, M.B., S.K. Lakshmanan, R.H. Wentorf,
Rivera-Alvarez and I. Hernandez-Cal- R.R. Reeves and W.N. Gill, Thermal chem-
deron, Hillocks formation during the mo- ical vapor deposition of copper from hexa-
lecular beam epitaxial growth of ZnSe on fluoroacetylacetonate Cu(I)
GaAs substrates 193 (1998) 528 vinyltrimethylsilane: kinetic studies 193 (1998) 133
Lowndes, D.H., see Park, J.-W. 193 (1998) 516 Nastac, L., Analytical modeling of solute re-
Lu, D.-C., see Liu, X. 193 (1998) 23 distribution during the initial unsteady un-
Lu, D.-C., see Wang, L. 193 (1998) 484 idirectional solidification of binary dilute
Lu, K., see Hong, X. 193 (1998) 610 alloys 193 (19982)7 1
Lu, T., Y. Liu, J. Shigley, T. Moses and I.M. Naumann, W., see Franke, T. 193 (19984)5 1
Reinitz, Characterization of a notable his- Ng, G.L, see Yoon, S.F. 193 (19982)8 5
toric gem diamond showing the alexan-
Nijdam, A.J., see Plomp, M. 193 (19983)8 9
drite effect 193 (1998) 577
Noda, S., see Nabetani, Y. 193 (19984)7 0
Noh, S.K., see Lee, C.-R. 193 (19983)0 0
Ma, W.J., B.C. Khoo and D. Xu, Influence of
Noh, S.K., see Leem, J.-Y. 193 (19984)9 1
Coriolis force on bulk flows during hori-
zontal Bridgman growth on a centrifuge: Nur, O., see Zhao, Q.X. 193 (19983)2 8
a numerical study 193 (19984)3 0
MacMillan, M.F., see Tuominen, M. 193 (19981)0 1 Oh, J. and C.H. Grein, Epitaxial growth simu-
Maffei, N., see Saghir, M.Z. 193 (19986)2 3 lations of CdTe(1 1 1)B on Si(0 0 1) 193 (1998) 241
Matsumoto, S., see Yamamoto, N. 193 (1998) 16 Ohiso, Y., see Amano, C. 193 (1998) 460
Maurin, M., see Tomasini, P. 193 (19985)7 2 Ohshita, Y.. M. Oshida, M. Seki and K.
Mawatari, H., see Yamamoto, N. 193 (1998) 16 Watanabe, TiSi,/Si interface instability in
Mei, X., H.E. Ruda, T. Berdiskihk and M. plasma-assisted chemical vapor deposition
Buchanan, Liquid phase epitaxial growth of titanium 193 (1998) 322
of GaP layers on textured GaP (1 1 1)B Okada, M., see Sekijima, T. 193 (1998) 446
substrates 193 (1998) 148 Okada, Y., see Udono, H. 193 (1998) 39
Meng, X., see Zhang, H. 193 (1998) 370 Okamoto, H., see Yamamoto, N. 193 (1998) 16
Meseguer, F., see Yates, H.M. 193 (1998) 9 Okhrimenko, T.M., see Kuznetsov, V.A. 193 (1998) 164
Miguez, H., see Yates, H.M. 193 (1998) 9
Okuyama, H., S. Kijima, Y. Sanaka and A.
Miyasaka, H., see Nagai, Y. 193 (1998) 732
Ishibashi, Study of the growth mechanism
Mizutani, U., see Takagi, A. 193 (1998) 71 of ZnCdSe by MBE using the mass spec-
Modak, P., M.K. Hudait, S. Hardikar and S.B. trometer 193 (1998) 43
Krupanidhi, OMVPE growth of undoped Oshida, M., see Ohshita, Y. 193 (1998) 322
and Si-doped GaAs epitaxial layers on Ge 193 (1998) 501
Mohan Rao, P., see Nagaraja, H.S. 193 (1998) 674
Pan, J., see Yuan, Y. 193 (1998) 585
Moriwaki, Y., see lijima, M. 193 (1998) 182
Pan, Q., see Gallagher, D.T. 193 (1998) 665
Moses, T., see Lu, T., 193 (1998) 577
Park, J-W., C.M. Rouleau and D.H.
Moudden, H., see Ammerahl, U. 193 (1998) 55
Lowndes, Heteroepitaxial growth of n-
Miiller, P. and R. Kern, Equilibrium shape of
type CdSe on GaAs(00 1) by pulsed laser
epitaxially strained crystals (Volmer—
deposition: studies of film—substrate inter-
Weber case) 193 (1998) 257 193 (19985)1 6
diffusion and indium diffusion
Murmann, L., see Kauerauf, B. 193 (1998) 701
193 (19983)0 0
Park, S.-E., see Lee, C.-R.
193 (19983)2 8
Patel, C.J., see Zhao, Q.X.
Nabetani, Y., K. Sawada, Y. Furukawa, A.
Pavlyuchenko, V.S., see Drebushchak, V.A. 193 (19987)2 8
Wakahara, S. Noda and A. Sasaki, Self-
193 (1998) 9
assembled InP islands grown on GaP sub- Pemble, M.E., see Yates, H.M.
193 (19986)9 2
strate 193 (1998) 470 Peters, P., see Sen, S.
Author index
Piechotka, M., E. Kaldis, G. Wetzel, H.-J. CZ): a novel way of seeding the melt to
Schneider, W. Buff, M. Tardy and H. grow bulk single crystal 193 (19982)5 2
Stanna, Kinetics of physical vapor trans- Sarti, D., see Dour, G. 193 (19982)3 0
port at low pressure under microgravity Sasaki, A., see Nabetani, Y. 193 (19984)7 0
conditions. I. DCMF flight hardware and
Sato, K., see Takiguchi, H. 193 (19986)4 1
experimental conditions 193 (1998) 80
Satoh, H., see Sekijima, T. 193 (19984)4 6
Piechotka, M., E. Kaldis, G. Wetzel and A.
Sawada, K., see Nabetani, Y. 193 (19984)7 0
Flisch, Kinetics of physical vapour trans-
Schneider, H.-J., see Piechotka, M. 193 (1998) 80
port at low pressure under microgravity
Schoutsen, M., see van Hoof, P.J.C.M. 193 (19986)7 9
conditions. II. Results of the DCMF space
experiment 193 (1998) 90 Seki, M., see Ohshita, Y. 193 (19983)2 2
Sekijima, T., H. Satoh, K. Tahara, T. Fujii, K.
Plomp, M., A.J. Nijdam and W.J.P. van En-
Wakino and M. Okada, Growth of fibrous
ckevort, The structure of coarse crystal
YIG single crystals by the self-adjusting
surfaces: the (0 0 1) face of K,Cr,0, crys-
solvent FZ method 193 (1998) 446
tals grown from aqueous solution as an
example 193 (1998) 389 Sen, S., B.K. Dhindaw, P.A. Curreri, P. Peters
Potschke, J., see Busse, P. 193 (1998) 413 and W.F. Kaukler, Measurement of inter-
facial undercooling in a dilute Pb—Sn alloy
Prince, R.H., see Chen, Y. 193 (1998) 342
near the regime of morphological instabil-
ity 193 (1998) 692
Qi, M., see Chen, J.X. 193 (1998) 28
Shigley, J., see Lu, T., 193 (1998) 577
Qiu Rongsheng, see Xu Ke 193 (1998) 127
Shinmura, M., see Aswal, D.K. 193 (1998) 61
Quon, D.H.H., see Saghir, M.Z. 193 (1998) 623
Simonnet, A., see Brisson, O. 193 (1998) 597
Skudarnov, P.V., L.L. Regel and W.R. Wilcox,
Radhakrishnan, K., see Yoon, S.F. 193 (1998) 285
Visualization of convection in a simulated
Rak, M., see Kuznetsov, V.A. 193 (1998) 164 193 (19982)1 9
gradient freeze cell during centrifugation
Rak, M., Influence of the back-stress effect on 193 (19983)2 8
Sédervall, U., see Zhao, Q.X.
the interstep distance and on the surface 193 (19983)0 0
Son, S.-J., see Lee, C.-R.
supersaturation 193 (1998) 189
193 (19984)9 1
Son, S.-J., see Leem, J.-Y.
Ramasamy, P., see Sankaranarayanan, K. 193 (1998) 252
193 (19986)7 4
Sreeramana Aithal, P., see Nagaraja, H.S.
Ramirez-Piscina, L., see Gonzalez-Cinca, R. 193 (1998) 712
193 (1998) 80
Reeves, R.R., see Naik, M.B. 193 (1998) 133 Stanna, H., see Piechotka, M.
193 (1998) 1
Regel, L.L., see Skudarnov, P.V. 193 (1998) 219 Stringfellow, G.B., see Hsu, T.C.
Sugawara, T., R. Komatsu and S. Uda,
Regula, M., C. Ballif and F. Lévy, In situ TEM
Growth and characterization of lithium
observation of nickel promoted WS, thin-
film crystallization 193 (19981)0 9 tetraborate crystals grown in_phase-
matching directions 193 (1998) 364
Reinitz, I.M., see Lu, T., 193 (19985)7 7
Ren, Y.C., see Chen, J.X. 193 (1998) 28 Sun, D.Z., see Liu, J.P. 193 (1998) 535
Revcolevschi, A., see Ammerahl, U. 193 (1998) 55 Syvajarvi, M., see Tuominen, M. 193 (1998) 101
Rex, S., see Kauerauf, B. 193 (19987)0 1
Rivera-Alvarez, Z., see LOpez-Lopez, M. 193 (19985)2 8 Tahara, K., see Sekijima, T. 193 (1998) 446
Rouleau, C.M., see Park, J.-W. 193 (19985)1 6 Takagi, A., J.-G. Wen, I. Hirabayashi and U.
Route, R.K., see Lee, M. 193 (19983)4 7 Mizutani, Growth mode dependence of
microstructures and superconducting
Ruda, H.E., see Mei, X. 193 (19981)4 8
properties of Nd,¥+,Ba,-,Cu,O, thick
Ryu, Y.-H., see Leem, J.-Y. 193 (19984)9 1
films prepared by liquid-phase epitaxy 193 (1998) 71
Takenouchi, H., see Amano, C. 193 (1998) 460
Saghir, M.Z., M.R. Islam, N. Maffei and
Takiguchi, H., K. Iida, S. Ueno, J. Yano and
D.H.H. Quon, Three-dimensional model-
K. Sato, Heterogeneous nucleation of n-
ing of Bi,;,GeOx using the float zone
alcohol crystals from solution assisted by
technique 193 (1998) 623
vapor-deposited thin films of fatty acids 193 (19986)4 1
Salamatin, A.N., T. Hondoh, T. Uchida and
V.Y. Lipenkov, Post-nucleation conver- Tang, D., see Hong, X. 193 (19986)1 0
Tardy, M., see Piechotka, M. 193 (1998) 80
sion of an air bubble to clathrate air—
hydrate crystal in ice 193 (1998) 197 Tateno, K., see Amano, C. 193 (19984)6 0
Sanaka, Y., see Okuyama, H. 193 (1998) 43 Tédenac, J.C., see Tomasini, P. 193 (19985)7 2
Sankaranarayanan, K. and P. Ramasamy, Teng, X.-G., see Yang, H.-F. 193 (19984)7 8
Microtube-Czochralski technique (pT- Tiwari, A.N., see Furlong, M.J. 193 (19981)1 4
744 Author index
Tomasini, P., A. Haidoux, J.C. Tédenac and Si substrate by metalorganic vapor phase
M. Maurin, Methylpentacarbonylman- epitaxy 193 (19984)8 4
ganese as organometallic precursor for the Wang, P., see Zhang, H. 193 (19983)7 0
epitaxial growth of manganese selenide Wang, X., see Liu, X. 193 (1998) 23
heterostructures 193 (1998) 572 Wang, Y., see Wang, L. 193 (19984)8 4
Toth-Katona, T., see Gonzalez-Cinca, R. 193 (1998) 712 Wang, Z., see Wang, L. 193 (19984)8 4
Tracy, S.L., C.J.P. Frangois and H.M. Jenn- Warddrip, M.L., see Begarney, M.J. 193 (19983)0 5
ings, The growth of calcite spherulites from Watanabe, K., see Ohshita, Y. 193 (19983)2 2
solution I. Experimental design techniques 193 (1998) 374
Watanabe, M., M. Eguchi and T. Hibiya,
Tracy, S.L., D.A. Williams and H.M. Jennings, Flow and temperature field in molten sili-
The growth of calcite spherulites from
con during Czochralski crystal growth in
solution. II. Kinetics of formation 193 (1998) 382 a cusp magnetic field 193 (19984)0 2
Tsuboi, Y., see Nagai, Y. 193 (1998) 732 Wen, J.-G., see Takagi, A. 193 (1998) 71
Tuominen, M.., R. Yakimova, A. Wentorf, R.H., see Naik, M.B. 193 (19981)3 3
Kakanakova-Georgieva, M.F. MacMil- Wetzel, G., see Piechotka, M. 193 (1998) 80
lan, M. Syvajarvi and E. Janzén, Investiga-
Wetzel, G., see Piechotka, M. 193 (1998) 90
tion of domain evolution in sublimation
Wilcox, W.R., see Skudarnov, P.V. 193 (19982)1 9
epitaxy of SiC 193 (1998) 101
Willander, M., see Zhao, Q.X. 193 (19983)2 8
Williams, D.A., see Tracy, S.L. 193 (19983)8 2
Uchida, T., see Salamatin, A.N. 193 (1998) 197
Wu, Z., see Fu, Z. 193 (19983)1 6
Uda, S., see Sugawara, T. 193 (1998) 364
Uda, S., see Lan, C.W. 193 (1998) 552
Xu, D., see Ma, W.J. 193 (1998) 430
Udono, H., I. Kikuma and Y. Okada, Lattice
Xu, J., X.J. Cheng, A. Behres and K. Heime,
parameter of ZnSe crystals grown from
Calculation of lateral distribution of lattice
melt under Zn partial pressure 193 (1998) 39
constant for horizontal MOVPE grown
Ueno, S., see Takiguchi, H. 193 (1998) 641 quaternary alloys 193 (1998) 50
Upadhyaya, V., see Nagaraja, HLS. 193 (1998) 674 Xu, J. and X.J. Cheng, Analysis compositional
Uppal, K., see Kim, I. 193 (1998) 293 homogeneity for MOVPE grown ternary
alloys in the horizontal reactor with
Van Enckevort, W.J.P., see Plomp, M. 193 (1998) 389 a rotating susceptor 193 (1998) 636
Xu, J., X.J. Cheng, A. Behres and K. Heime,
Van Enckevort, W.J.P., see van Hoof,
P.J.C.M. 193 (1998) 679 Erratum to “Calculation of lateral distri-
butions of lattice constant for horizontal
Van Hoof, P.J.C.M., W.J.P. van Enckevort
MOVPE grown quaternary alloys”. [J.
and M. Schoutsen, The growth of extreme-
Crystal Growth 193 (1998) 50] 193 (1998) 738
ly thin crystals: a Monte Carlo study and
an application to n-paraffins 193 (1998) 679 Xu Jianwei, Zhou Yongzong, Zhou Guoging,
Xu Ke, Deng Peizhen and Xu Jun, Growth
Varenka, J., see Kubinek, R. 193 (1998) 174
of large-sized sapphire boules by temper-
Vazquez, L., see Yates, H.M. 193 (1998) 9
ature gradient technique (TGT) 193 (1998) 123
Virozub, A. and S. Brandon, Radiative heat
Xu Jun, see Xu Jianwei 193 (1998) 123
transport during the vertical Bridgman
Xu Jun, see Xu Ke 193 (1998) 127
growth of oxide single crystals: slabs versus
cylinders 193 (1998) 592 Xu Ke, see Xu Jianwei 193 (1998) 123
Xu Ke, Xu Jun, Deng Peizhen, Zhou Yong-
zong, Zhou Guoging, Qiu Rongsheng and
Wakahara, A., see Nabetani, Y. 193 (19984)7 0
Fang Zujie, y-LiAlO, single crystal:
Wakamatsu, N., see Iijima, M. 193 (19981)8 2
a novel substrate for GaN epitaxy 193 (1998) 127
Wakino, K., see Sekijima, T. 193 (19984)4 6
Xu, L.B., The formation of an inhomogeneous
Wang, C., see Zhang, H. 193 (19983)7 0 distribution of oxygen in CZ-Si crystal: An
Wang, D., see Liu, X. 193 (1998) 23 investigation with quantum reaction—dif-
Wang, D., see Wang, L. 193 (19984)8 4 fusion equation 193 (1998) 541
Wang, L., see Liu, X. 193 (1998) 23
Wang, L., X. Liu, Y. Zan, D. Wang, D.-C. Lu, Yakimova, R., see Tuominen, M. 193 (1998) 101
Z. Wang, Y. Wang, L. Cheng and Z. Yamamoto, N., K. Kishi, Y. Kondo, S. Mat-
Zhang, The growth and characterization sumoto, R. Iga, Y. Kadota, H. Okamoto
of GaN grown on an Al,O, coated (00 1) and H. Mawatari, Ammonium sulfide
Author index 745
combined etching (ACE): an effective treat- Zacher, Th., see Franke, T. 193 (1998) 451
ment for reducing impurities prior to Zan, Y., see Wang, L. 193 (1998) 484
MOVPE InP regrowth in a process using Zhang, H., X. Meng, L. Zhu, C. Wang, P.
hydrocarbon gas reactive ion etching Wang, H. Zhang, Y.T. Chow and J. Dawes,
(RIE) 193 (1998) 16 Growth and laser properties of laser crys-
Yang, H.-F., P.-D. Han, L.-S. Cheng, Z. tal Nd: Gdop gLap »VOu 193 (1998) 370
Zhang, S.-K. Duan and X.-G. Teng, Zhang, H., see Zhang, H. 193 (1998) 370
Microstructure evolution of GaN buffer Zhang, P.H., see Yoon, S.F. 193 (1998) 285
layer on MgAl,O, substrate 193 (1998) 478 Zhang, Z., see Yang, H.-F. 193 (1998) 478
Yang, Q.K., see Chen, J.X. 193 (1998) 28 Zhang, Z., see Wang, L. 193 (1998) 484
Yano, J., see Takiguchi, H. 193 (1998) 641 Zhao, Q.X., O. Nur, U. Sdédervall, C.J. Patel,
Yates, H.M., M.E. Pemble, H. Miguez, A. M. Willander, P.O. Holtz and W.B. de
Blanco, C. Lopez, F. Meseguer and L. Vaz- Boer, Optical study of APCVD-grown
quez, Atmospheric pressure MOCVD Si, _.Ge,/Si quantum well structures un-
growth of crystalline InP in opals 193 (1998) 9 der different post-growth annealing condi-
Yoon, J.K., see Kang, G.Y. 193 (1998) 615 tions 193 (19983)2 8
Yoon, S.F., P.H. Zhang, H.Q. Zheng, K. Rad- Zheng, H.Q., see Yoon, S.F. 193 (19982)8 5
hakrishnan and G.I. Ng, The effects of Zhou Guoging, see Xu Jianwei 193 (19981)2 3
beryllium doping in InGaAlAs layers Zhou Guoging, see Xu Ke 193 (19981)2 7
grown by molecular beam epitaxy 193 (1998) 285 Zhou Yongzong, see Xu Jianwei 193 (19981)2 3
Yoon, Y.S., see Kim, T.W. 193 (1998) 496 Zhou Yongzong, see Xu Ke 193 (19981)2 7
Yuan, Y. and J. Pan, The effect of vapor phase Zhu, L., see Zhang, H. 193 (19983)7 0
on the growth of TiC whiskers prepared by Zimmermann, G., see Kauerauf, B. 193 (19987)0 1
chemical vapor deposition 193 (1998) 585 Zogg, H., see Furlong, M.J. 193 (19981)1 4
junnor CRYSTAL
GROWTH
ELSEVIER Journal of Crystal Growth 193 (1998) 746-748
Subject index
Apparatus — photolithographic 510
— for directional solidification 701
— for in situ observation of crystallization 61 Heat flow control
— for physical vapor transport rate 80 — of numerical simulation 430
— of vapor growth system 426
Biological aspects Hydrodynamics, see Convection
— of antibody recognition 656
Kinetics
Cellular growth — of growth 80, 90, 114, 156, 164, 182, 189, 305, 342, 374, 382,
— of lead-tin alloys 692 430, 470, 510, 528, 535, 577, 610
— of transparent alloys 701 — of nucleation 156, 257, 426, 510, 610, 641
Computer simulation | of particle engulfment 413
— of low supersaturation nucleation 426 of surface processes 451
— of melt growth 592 | of thin film formation 133
— of micro-pulling down process 552
— of oxygen doping in silicon 541 Lasers, crystals for
— of phase field model 712 — silver gallium selenide 597
— of thin crystal growth 679 ~— ultraviolet 364, 370
Constitutional supercooling
— of barium borate 610
Melt growth technique
— of dilute binary alloys 271
— by Bridgman-—Stockbarger method
— of lead—tin alloys 692
— — of lead barium niobate 347, 355
Convection 90, 133, 219, 552, 692, 701 — — of silver gallium selenide 597
— — of succionitrile 701
Dendritic growth of zinc selenide 39
— of liquid crystals 712 theory of heat flow 430, 592
— of neodymium barium cuprate 61 — by Czochralski method
— of ODS-alloys 413 of benzil 252
— of sodium chloride 174 of gadolinium lanthanum vanadate 370
Device characterization - of germanium 720
~— electronic materials 9, 39, 491 of indium antimonide 443
~ nanoparticles 335 of lithium tetraborate 364
— quantum wells 328 of silicon 402, 541, 720
Diffusional control — by floating zone method
— of cadmium selenide 516 — — of fibrous yttrium iron garnet 446
— of germanium in silicon—germanium 328 — — of strontium calcium cuprate 55
— of solid growth 197 — by induction cold crucible
Dissolution of ~ — of silicon 230
— neodymium barium cuprate 61 — by micro-pulling down method
— — of silicon germanium 552
Electronic materials, see Device characterization — by uniaxial solidification
Epitaxy, see Thin film growth ~ — of a-aluminum oxide 123, 127
Etching — — of binary alloys 271
— chemical 16, 305, 510 — — theory of convection 271
0022-0248/98/$ — see front matter © 1998 Elsevier Science B.V. All rights reserved.
PII: S0022-0248(98)00779-9
Subject index
— by zone melting of potassium acid phthalate 164
— — of bismuth germanate 623 — — of potassium bichromate 389
Microgravity, growth under of potassium dihydrogen phosphate 164
— of bismuth germanate 623 theory of growth kinetics 189
— of lead-tin alloys 692 — by protein supersaturation
— of mercuric iodide 80, 90 — — of subtilisin 665
Morphological stability Superlattices, multilayers
— of binary alloys 271, 701 — of semi-magnetic II-VI compounds 572
— of lead—tin alloys 692 Surface energy determination
— of protein crystals 665 — of n-paraffin 679
— of silicon—germanium surfaces 720 Surface structure, of
— of spherulitic calcite 374, 382 — cellular solid—liquid interface 701
— of strained crystals 257 — coarse crystal faces 389
— of titanium carbide whiskers 585 — gallium arsenide 451
— gallium indium phosphide 1
Nanoparticles, see Device characterization — subtilisin 665
Nucleation
— of cadmium telluride 426
Thin film growth, epitaxy
— of neodymium barium cuprate 61
— by atomic layer epitaxy
Numbers
— — of zinc sulphide selenide 33
— Grashof 430
— by liquid phase epitaxy
— Marangoni 552
~— — of gallium phosphide 148
— Peclet 133
| | of lithium niobate 605
of lithium niobate tantalate 605
Phase diagram, of
— — of neodymium barium cuprate 71
— iron—nickel—sulphur 728
— by metalorganic molecular beam epitaxy
— neodymium barium cuprate 61
— — of indium gallium phosphide 510
Precursor, for
— — of indium phosphide islands 470
— biological apatite 182
— — of silicon germanium 535
— magnesium selenide 572
— — theory of growth kinetics 28
— silicon carbide 335
— by molecular beam epitaxy
Purification
— — of indium gallium aluminum arsenide 285
— of pentlandite 728
— — of zinc cadmium selenide 43
— of succinonitrile 701
| | of zinc selenide 528
— — theory
Quantum wells, see Device characterization — — — of cadmium telluride growth simulation 241
— — — of mole fraction and growth rate 43
Solid growth — by vapor phase epitaxy
— by recrystallization — — theory of growth 636
— — of tungsten sulphide 109 — — through chemical vapor deposition
Solution growth — — — of silicon carbide 335
— by constant evaporation — — — of silicon germanium 328
— — of benzoyl amino acetic acid 674 — — — of titanium 322
— by flux method — — through evaporation and condensation
— — of emeralds 648 ~ — — of gallium arsenide 451
— — of neodymium barium cuprate 61, 71 — — — of silver on indium phosphide 496
— — of potassium lithium niobate 615 — — through metalorganic chemical vapor deposition
— — of strontium calcium cuprate 55 ~ — — of aluminum arsenide 460
— — of tungsten sulphide 109 ~ — — of aluminum gallium arsenide 460
— by low temperature method ~ — — of gallium arsenide 460, 501
— — of cadmium sulphide 114 — — — of gallium indium phosphide 1
— — of calcium spherulites 374, 382 ~ — — of gallium nitride 23, 127, 300, 478, 484, 491
— — of calcium sulphate dihydrate 156 ~ — — of indium gallium arsenide phosphide 293
— — of copper indium diselenide 114 ~ — — of indium phosphide 9, 16
— — of hydroxy apatite 182 ~ — — of indium phosphide antimonide 50
— — of n-alcohol crystals 641 — — — of lithium aluminate 127
of octacalcium phosphate 182 of magnesium selenide 572
Subject index
— — of III-V compounds 305 — — of silicon carbide 101
— — of zinc magnesium sulphide selenide 50 — by plasma assisted chemical vapor deposition
through pulsed laser deposition — — of graphitic nanofibres 342
— — of cadmium selenide 516 by pulsed laser deposition
through sputtering — — of cadmium selenide 516
— of zinc oxide 316 by sputtering
— — of zinc oxide 316
Vapor growth technique — theory of nucleation 426
by chemical vapor deposition Vapor-liquid-solid growth
— of copper 133 — of pentlandite 728
by evaporation and condensation — of titanium carbide whiskers 585
— of a-hexathiophene 563 — of zinc selenide whiskers 528
— of a-quaterthiophene 563
of gallium arsenide 451 Whiskers growth
of mercuric iodide 80, 90 — of titanium carbide 585
of organic films 732 — of zinc selenide 528
