Table Of ContentSpringer Series in Materials Science 306
Jinmin Li · Junxi Wang · Xiaoyan Yi ·
Zhiqiang Liu · Tongbo Wei ·
Jianchang Yan · Bin Xue
III-Nitrides Light
Emitting Diodes:
Technology and
Applications
Springer Series in Materials Science
Volume 306
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· · ·
Jinmin Li Junxi Wang Xiaoyan Yi
· · ·
Zhiqiang Liu Tongbo Wei Jianchang Yan
Bin Xue
III-Nitrides Light Emitting
Diodes: Technology
and Applications
Authors
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JinminLi JunxiWang
TheStateKeyLaboratoryforSolidState TheStateKeyLaboratoryforSolidState
Lighting,Beijing,China Lighting,Beijing,China
CenterofMaterialsScience CenterofMaterialsScience
andOptoelectronicsEngineering andOptoelectronicsEngineering
UniversityofChineseAcademyofSciences UniversityofChineseAcademyofSciences
Beijing,China Beijing,China
InstituteofSemiconductors InstituteofSemiconductors
ChineseAcademyofSciences ChineseAcademyofSciences
Beijing,China Beijing,China
XiaoyanYi ZhiqiangLiu
TheStateKeyLaboratoryforSolidState TheStateKeyLaboratoryforSolidState
Lighting,Beijing,China Lighting,Beijing,China
CenterofMaterialsScience CenterofMaterialsScience
andOptoelectronicsEngineering andOptoelectronicsEngineering
UniversityofChineseAcademyofSciences UniversityofChineseAcademyofSciences
Beijing,China Beijing,China
InstituteofSemiconductors InstituteofSemiconductors
ChineseAcademyofSciences ChineseAcademyofSciences
Beijing,China Beijing,China
TongboWei JianchangYan
TheStateKeyLaboratoryforSolidState TheStateKeyLaboratoryforSolidState
Lighting,Beijing,China Lighting,Beijing,China
CenterofMaterialsScience CenterofMaterialsScience
andOptoelectronicsEngineering andOptoelectronicsEngineering
UniversityofChineseAcademyofSciences UniversityofChineseAcademyofSciences
Beijing,China Beijing,China
InstituteofSemiconductors InstituteofSemiconductors
ChineseAcademyofSciences ChineseAcademyofSciences
Beijing,China Beijing,China
BinXue
TheStateKeyLaboratoryforSolidState
Lighting,Beijing,China
InstituteofSemiconductors
ChineseAcademyofSciences
Beijing,China
Preface
GaN-basedhighbrightnessblueLightEmittingDiode(LED)marksthemilestone
ofSolidStateLighting(SSL)developmentwhichexpandsabrand-newhorizonof
illumination.SSLhasbecomeoneofthemostcompetitiveresearchfocusesworld-
wide. When I was a senior visiting scholar to the USA between 2000 and 2002,
I was impressed by the prototype of such device during a photonics exhibition. I
realized that LEDs could lead revolution of artificial lighting. At the beginning of
2003,togetherwithmycolleagues,wemadeadraftofSSLresearchdevelopment
planandreportedtotheChineseauthorityinordertoemphasizethesignificanceof
developing III-nitridesbased LEDtechnology. Inthesameyear,Chinese Ministry
of Science and Technology (MOST) launched the National SSL Project and three
yearslater,SSLresearchanddevelopmentcenterofChineseAcademyofSciences
(CAS) was established upon Institute of Semiconductors, CAS, where the authors
areworking.
Thanks to continuous support from the government through R&D funding and
hardworking researchers, Chinese SSL technology has made tremendous progress
infulltechnicalchain.IthaspromotedtheconstructionandimprovementofChinese
SSLindustry.Thetechnologyhasbeensuccessfullyemployedinvariousimportant
scenarios,suchasBeijingOlympics,ShanghaiExpo,etc.Theapplicationisagood
demonstrationandenablesthepublicexperiencethefascinationofSSL.
SSLtechnologyprogressisbasedonthetechnologybreakthroughinfundamental
problemsofwidebandgapsemiconductormaterials.Improvementofmaterialquality
and quantum efficiency is benefited from low temperature buffer layer and p-type
doping technology. Doping mechanism and density are investigated and improved
bystudyingfirstprinciplecalculation,whichenablestheperformanceenhancement
of the devices. Although SSL products have been widely used in our daily life,
performanceoftheseproductscanbefurtherimproved.Itisnecessarytostrengthen
basicscientificresearchtoboostthedriveforceofSSLtechnology.
FundamentalconceptandmaterialpropertyofIII-nitridesLEDsisdiscussedin
Chaps.2and3.Basicconceptofmaterialgrowthandepitaxytechnology,concept
of InGaN/GaN multiple-quantum-well-structured blue and green light emitting
diodes,AlGaN/GaNmultiple-quantum-well-structuredvioletlightemittingdiodes
vii
viii Preface
arepresentedinChaps.4–6.Quantumefficiencyenhancementtechnology,chipfabri-
cation, packaging, reliability analysis, and application of LEDs are discussed in
Chaps.7–12.
Beijing,China JinminLi
Acknowledgements
I would like to express my deep gratitude to the respected Chinese academicians
includingProfs.WangZhanguo,ZhouBingkun,GanZizhao,ZhengYoudou,Chen
Lianghui,andXiaJianbaifortheircontinuousguidanceandcontribution.Iwouldlike
totakethisopportunitytoexpressmyappreciationforcontinuoussupportfromthe
MinistryofScienceandTechnologyofChina.Theconceptofthisbookisfulfilled
by the research progress of my colleagues at CAS and their input is very much
appreciated.ManythankstoDr.ZheLiu,Dr.HuaYang,Dr.YiyunZhang,Dr.YiLu,
andDr.YangLi.Furthermore,IwanttoacknowledgeherethecontributionofProf.
QuanxiJia(UniversityatBuffalo,theStateUniversityofNewYork),andthankhim
forhissupportandfriendship.
Idohopethisbookcouldprovideassistancetothosewhoareworkingorinterested
insolidstatelighting.
Beijing,China JinminLi
ix
Brief Introduction of This Book
Theconceptofthisbookisbasedontheresearchprogressoftheauthorsandcovers
academicandpracticalcontentofIII-nitridesbasedlightemittingdiodes,including
epitaxygrowth,chipfabrication,packaging,andapplication.Thisbookconsistsof12
chapters,includingbasicprinciplesofIII-nitridesbasedlightemittingdiodes,mate-
rialpropertyandepitaxytechnology,InGaN/GaNmultiple-quantum-well-structured
blueandgreenlightemittingdiodes,AlGaN/GaNmultiple-quantum-well-structured
violetlightemittingdiodes,quantumefficiencyenhancementtechnology,chipfabri-
cationandpackagingtechnology,reliabilityandapplicationoflightemittingdiodes.
Last but not least, cutting-edge and hot spots of III-nitrides based light emitting
diodesresearchispresented.
Thisbookwillbeofintereststoscientists,engineersworkingonLEDtechnology
andapplications,andalsopostgraduatestudentsinrelatedsubjects.
xi
