Table Of ContentAdvanced Indium
Arsenide-based HEMT
Architectures for
Terahertz Applications
Advanced Indium
Arsenide-based HEMT
Architectures for
Terahertz Applications
Edited by
N. Mohankumar
First edition published 2022
by CRC Press
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ISBN: 978-0-367-55414-9 (hbk)
ISBN: 978-0-367-55415-6 (pbk)
ISBN: 978-1-003-09342-8 (ebk)
DOI: 10.1201/9781003093428
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Contents
Preface ....................................................................................................................vii
Editor........................................................................................................................ix
Contributors ............................................................................................................xi
1. Introduction to III–V Materials and HEMT Structure ...........................1
Sanhita Manna
2. III–V Heterostructure Devices for Ultralow-Power,
High-Power, and High-Breakdown Applications ..................................13
D. Godwinraj
3. III–V Heterostructure Devices for High-Frequency Applications ........31
R. Saravanakumar
4. Overview of THz Applications ..................................................................45
T. Nagarjuna
5. Device and Simulation Framework of InAs HEMTs ............................53
V. Mahesh
6. Single-Gate (SG) InAs-based HEMT Architecture for
THz Applications ..........................................................................................63
M. Arun Kumar
7. Effect of Gate Scaling and Composite Channel in InAs HEMTs .........79
C. Kamalanathan
8. Double-Gate (DG) InAs-based HEMT Architecture for
THz Applications ..........................................................................................91
R. Poornachandran
9. Influence of Dual Channel and Drain-Side Recess Length
in Double-Gate InAs HEMTs ..................................................................101
Y. Vamsidhar
10. Noise Analysis in Dual Quantum Well InAs-based
Double-Gate (DG) HEMTs .......................................................................117
Girish Shankar Mishra
Index .....................................................................................................................127
v
Preface
In this era of high-speed communication, the semiconductor industry is
focused on fabricating high-speed devices with reduced short-channel
effects and minimal power dissipation. To achieve high-speed perfor-
mance, III–V compound semiconductors have emerged as a suitable alter-
native over conventional silicon (Si) channel devices. The semiconductor
industry has been dominated by silicon technology for decades with its
established complementary metal–oxide–semiconductor (CMOS) process.
However, during the scaling of metal–oxide–semiconductor field-effect
transistors (MOSFETs) below 22 nm, discrepancies, such as an increase in
short-channel effects, affect the performance of the device. To overcome this
problem, high electron mobility transistors (HEMTs) arrived as promising
candidates because of their reliability when compared to other devices such
as silicon nanowires and carbon nanotubes. For applications requiring tera-
hertz (THz) waves, the novel HEMT device with III–V materials, such as
InAlAs, InGaAs, and InAs, are used as sources for achieving the terahertz
spectrum. In particular, for defense and medical applications, these devices
can produce terahertz radiation, loosely defined as having a frequency from
0.1 to 10 THz. This high frequency is made possible by proper device scal-
ing, increasing the concentration of carrier in the channel and achieving low
noise from the device. Although scaling of the device gives better perfor-
mance, it also increases the short-channel effects in the device. To mitigate
this effect, a double-gate technology removing the buffer from the single-
gate structure HEMT is proposed. This double-gate (DG) structure shows
better control over the channel than the conventional single-gate HEMT
(SG-HEMT). This DG-HEMT architecture also provides reduced leakage
current in the OFF-state current by achieving high current driving capabil-
ity and high concentration of carriers in the two-dimensional electron gas
(2DEG). The five-layered composite channel (InGaAs/InAs/InGaAs/InAs/
InGaAs) and optimization of the drain-side recess length of the gate creates
a dual quantum well with low lattice defects, increased mobility of carriers,
and peak radio frequency (RF) and direct current (DC) performance with
reduced low-noise performance.
The entire book elaborates the discussion on the impact of five-layered
composite channel and novel device architectures for the growing world of
high-frequency electronics. The novel devices are simulated by using TCAD
Sentaurus tools, and the results are validated by experimental verification
of fabricated SG-HEMT devices. On the whole, this book clearly gives an
idea about the influence of dual quantum wells in the DG-HEMT structure
and its optimization to achieve frequency near the THz regime with reduced
noise.
vii
viii Preface
The motivation for editing this book came about while optimizing the
devices for high-frequency applications as my research area and due to the
advancement of THz electronics for future detection, imaging, and other
fields. This book is intended for senior undergraduate and postgraduate stu-
dents of electronics engineering, and for researchers and professors working
in the area of RF electronic devices. The purpose of this book is to dissemi-
nate the concepts and physics of new device architectures with InAs as the
channel material to enhance RF performance metrics and realize the feasi-
bility of the devices to work in the THz regime.
The chapters in the book provide a balance between basic concepts and
recent technology, and an elaborate literature survey on the devices for high-
power, high-breakdown, and high-frequency applications involving new
device architectural designs.
Chapter 1 is an introduction to III–V materials and HEMT structures.
Chapter 2 discusses the introduction of III–V heterostructure devices for
ultralow, high-power, and high-breakdown applications. Chapter 3 presents
the III–V heterostructure for high-frequency applications. Chapter 4 pro-
vides an overview of THz applications. Chapter 5 discusses the simulation
framework of InAs HEMTs. Chapter 6 analyzes the single-gate InAs-based
HEMT architecture for THz applications. Chapter 7 realizes the effect of
gate scaling on the composite channel in InAs HEMTs. Chapter 8 introduces
the double-gate InAs-based HEMT and its advantages over its single-gate
counterpart. Chapter 9 covers the influence of dual-channel and drain-side
recess length in double-gate InAs HEMTs. Chapter 10 provides insight into
the noise analysis in dual quantum well InAs-based DG-HEMTs.
An extensive list of references is provided at the end of every chapter for a
deeper understanding and to motivate readers to engage in further research
in the RF domain.
I wish to congratulate all the contributors and their peers. Their convic-
tions and efforts are useful in enlightening the minds of the readers. The
dedication and efforts of all the contributors led to the successful completion
of this book. Special thanks to Gagandeep Singh and Gaba Lakshay and staff
members of CRC Press for their patience, guidance, and responsiveness dur-
ing the book publishing process.
Editor
Dr. N. Mohankumar was born in India in 1978. He
earned his BE degree from Bharathiyar University,
Tamilnadu, India, in 2000 and ME degree and PhD from
Jadavpur University, Kolkata, in 2004 and 2010, respec-
tively. He joined the Nano Device Simulation Laboratory
in 2007 and worked as a Senior Research Fellow under
CSIR Direct Scheme until September 2009. Later he
joined SKP Engineering College as a professor to develop
research activities in very large scale integration (VLSI)
and nanotechnology. He initiated and formed the Center
of Excellence in VLSI and nanotechnology at SKP Engineering College at the
cost of 1 crore.
A memorandum of understanding was signed between SKP, the Tokyo
Institute of Technology, and the New Jersey Institute of Technology under
Dr. Mohankumar’s guidance. In 2010 he taught at the Tokyo Institute of
Technology as a visiting professor for three months. In 2012 he was at the
New Jersey Institute of Technology as a visiting professor for two months.
For two weeks in 2013 he was a research professor at National Chiao Tung
University (Taiwan). He is currently working as a professor and head of
the EECE Department at Gandhi Institute of Technology and Management
(GITAM), Bengaluru Campus, in India.
He is a senior member of IEEE and served as secretary of IEEE, EDS
Calcutta Chapter, from 2007 to 2010. He served as a chairman of IEEE EDS
Madras Chapter from 2010 to 2017. He has published approximately 70 arti-
cles in reputed international journals and about 50 international conference
proceedings. He received the Career Award for Young Teachers (CAYT)
from the All India Council for Technical Education (AICTE), New Delhi, for
2012–2014.
He is a recognized supervisor for research under Anna University and
Jadavpur University. Fifteen PhD scholars have completed their studies
under his supervision. More than 50 ME students have completed their the-
ses under his guidance. At present, he is guiding three PhD research schol-
ars and two ME students.
His research interests include modeling and simulation study of high
electron mobility transistors (HEMTs), optimization of devices for radio fre-
quency applications and characterization of advanced HEMT architecture,
terahertz electronics, high-frequency imaging, sensors, and communication.
ix
