Table Of ContentUNIVERSITYOFCALIFORNIA,SANDIEGO
AdvancedCMOSCircuitsforMicrowaveandMillimeter-WaveCommunications
Adissertationsubmittedinpartialsatisfactionofthe
requirementsforthedegree
DoctorofPhilosophy
in
ElectricalEngineering(ElectronicCircuitsandSystems)
by
BerkeCetinoneri
Committeeincharge:
ProfessorGabrielM.Rebeiz,Chair
ProfessorJamesF.Buckwalter
ProfessorGertCauwenberghs
ProfessorWilliamS.Hodgkiss
ProfessorLawrenceE.Larson
2011
UMI Number: 3458457
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2011
iii
DEDICATION
Tomyparents,FerdiandSabahat
iv
TABLEOFCONTENTS
SignaturePage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iii
Dedication . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iv
TableofContents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v
ListofFigures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . vii
ListofTables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xi
Acknowledgements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii
VitaandPublications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xvi
AbstractoftheDissertation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xviii
Chapter1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 ThesisOverview . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Chapter2 W-BandAmplifierswith6dBNoiseFigureandmW-Level170-200GHz
Doublersin45-nmCMOS . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.2 Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.3 W-BandAmplifier . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.3.1 Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.3.2 Measurements . . . . . . . . . . . . . . . . . . . . . . . . 14
2.4 W-to-G-BandDoubler . . . . . . . . . . . . . . . . . . . . . . . . 16
2.4.1 Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2.4.2 Measurements . . . . . . . . . . . . . . . . . . . . . . . . 20
2.5 W-BandAmplifierandG-BandDoubler . . . . . . . . . . . . . . . 23
2.6 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
2.7 Acknowledgement . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Chapter3 Millimeter-WaveCMOSSwitches . . . . . . . . . . . . . . . . . . . . . 29
3.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.2 Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3.2.1 DC-70GHzSP4TSwitch . . . . . . . . . . . . . . . . . . 30
3.2.2 50-70GHzSPDTandSP4TSwitches . . . . . . . . . . . . 33
3.3 ImplementationandMeasurements . . . . . . . . . . . . . . . . . 35
3.3.1 DC-70GHzSP4TSwitch . . . . . . . . . . . . . . . . . . 35
3.3.2 50-70GHzSPDTandSP4TSwitches . . . . . . . . . . . . 38
3.4 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
3.5 Acknowledgement . . . . . . . . . . . . . . . . . . . . . . . . . . 46
v
Chapter4 8×8and4×4ButlerMatricesin0.13-µmCMOS . . . . . . . . . . . . . 47
4.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
4.2 8×8ButlerMatrixat5–6GHz . . . . . . . . . . . . . . . . . . . . 48
4.2.1 DesignandCircuitBlocks . . . . . . . . . . . . . . . . . . 48
4.2.2 Measurements . . . . . . . . . . . . . . . . . . . . . . . . 56
4.2.3 ExtensiontoFull-AngleScanning . . . . . . . . . . . . . . 60
4.3 4×4ButlerMatrixatKu-Band . . . . . . . . . . . . . . . . . . . . 60
4.3.1 Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
4.3.2 Measurements . . . . . . . . . . . . . . . . . . . . . . . . 64
4.4 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
4.5 Acknowledgement . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Chapter5 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
AppendixA AMicrowave-BasedGamma-RayDetector . . . . . . . . . . . . . . . . 74
A.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
A.2 OperationPrinciple . . . . . . . . . . . . . . . . . . . . . . . . . . 75
A.3 CylindricalCavityDesign . . . . . . . . . . . . . . . . . . . . . . 77
A.4 DetectorDesign. . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
A.5 Measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
A.6 CavityDesignsforImprovedDetection . . . . . . . . . . . . . . . 84
A.7 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
A.8 Acknowledgement . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Bibliography . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
vi
LISTOFFIGURES
Figure2.1: BlockdiagramofW-to-G-bandmultiplierchain. . . . . . . . . . . . . . . 4
Figure2.2: 45-nm SOI CMOS process metal stack-up and 50 Ω T-line cross-section
(nottoscale). Allmetallayersarecopperexceptthealuminumtopmetal. . 5
Figure2.3: Measuredf ofa30×1-µmcommon-sourcetransistorusingaTRLcalibration. 5
t
Figure2.4: Modelingoftransitionfromtopmetaldowntotransistorlevelandsimplified
layoutofa30×1-µmtransistor. . . . . . . . . . . . . . . . . . . . . . . . 7
Figure2.5: (a)Transistor-levelmodelingofinterconnectparasitics. Theeffectofpara-
sitics(b)onf and(c)onNF andΓ (30×1-µmtransistorused). . . 8
t min OPT
Figure2.6: (a) Measured U, MAG, and MSG vs. frequency up to 110 GHz, and (b)
simulatedandmeasuredf vs. currentdensity. . . . . . . . . . . . . . . 10
max
Figure2.7: (a)TheeffectofparasiticsontheMAGat90GHz,(b)measuredMAGvs.
frequencyfordifferentcurrentdensities,and(c)measuredMAGat75GHz. 11
Figure2.8: Theeffectofdifferentmodelingscenarioson(a)f ,(b)f ,(c)MAG,and
t max
(d)inputimpedanceat70-110GHz. . . . . . . . . . . . . . . . . . . . . . 12
Figure2.9: SchematicoftheW-bandamplifier. . . . . . . . . . . . . . . . . . . . . . 13
Figure2.10: (a)MicrophotographoftheW-bandCMOSamplifier(0.58×0.55mm2)and
(b)measuredS-parametersonthreedifferentsamples(onlyS isshownfor
21
thethreesamples). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure2.11: Measurednoisefigureoftheamplifierversusfrequencyandcurrentdensity. 16
Figure2.12: MeasuredoutputpowerandPAEversusinputpowerat95GHz. . . . . . . 17
Figure2.13: Measured(a)PsatandP1dBvs. frequency,(b)Psatvs. supplyvoltage. . . 17
Figure2.14: SchematicoftheW-to-G-bandbalanceddoubler. . . . . . . . . . . . . . . 18
Figure2.15: Simulations showing (a) output power and conversion gain of the doubler
vs. fingerwidth(30-µmwidetransistors),(b)effectofreflectorontheout-
put power of the doubler, and (c) output power contours for different gate
biasvoltagesandinputpowerlevels. . . . . . . . . . . . . . . . . . . . . 19
Figure2.16: 3-D view ofthe doubler inputbalun and simulated phase/amplitude imbal-
ancebetweenthedifferentialports. . . . . . . . . . . . . . . . . . . . . . 19
Figure2.17: (a)CPWtransmissionlinewithgroundplanemeshing. (b)Measured(solid)
andsimulated(dashed)lineloss/mmfora50ΩT-line. A600-µmlineand
GSGthrupadsareusedforlinelossmeasurements. . . . . . . . . . . . . 21
Figure2.18: (a)Microphotographofthedoubler(0.69×0.49mm2)and(b)measuredS-
parameters. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure2.19: Measurementsetupfordoubleroutputpowerandgaincharacterization. An
all-waveguidesetupisusedforaccuratepowermeasurements. . . . . . . . 22
Figure2.20: Measured (a) output power and gain of the doubler vs. input power at 180
GHz,(b)outputpowervs. frequency,and(c)DCcurrentvs. inputpower. . 22
Figure2.21: Measured peak output power of the G-band doubler versus frequency for
differentdoublerdesigns. . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure2.22: (a)Microphotographoftheamplifier/doubler(1.0×0.56mm2)and(b)mea-
suredoutputreturnloss. . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure2.23: Down-converted180GHzsignalattheoutputoftheamplifier/doublermea-
suredusingaspectrumanalyzer. . . . . . . . . . . . . . . . . . . . . . . . 24
vii
Figure2.24: Measuredconversiongainandoutputpoweroftheamplifier/doublerat180
and190GHz. Stand-alonedoubleroutputpowerisalsoplottedforcompar-
ison. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure2.25: (a) Measured peak output power and (b) conversion gain of the ampli-
fier/doublerversusfrequency. Measurementsdoneusingapowermeterand
amixerdown-conversionsetup. . . . . . . . . . . . . . . . . . . . . . . . 26
Figure3.1: Schematicofseries-shuntSP4Tswitch. . . . . . . . . . . . . . . . . . . . 30
Figure3.2: (a) Cross sectional view and (b) schematic of the SP4T switch using deep
n-wellnMOStransistors(onlyonebranchisshown). . . . . . . . . . . . . 31
Figure3.3: Simulated insertion loss and isolation of a series-shunt switch at 60 GHz
versusthegatewidth. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Figure3.4: TheinputreflectioncoefficientatDC-80GHzatthecommonnode(dashed)
andtheinputport(solid). . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Figure3.5: Schematicof(a)SPDTand(b)SP4Tswitches. . . . . . . . . . . . . . . . 34
Figure3.6: CrosssectionalviewoftheshuntCMOStransistorwithdeeptrenches,iso-
lationmoat,andhighR contacts. . . . . . . . . . . . . . . . . . . . . 35
SUB
Figure3.7: Simulated-10dBreturnlossmatchingbandwidth,andisolationversustran-
sistorwidthof(a)SPDTand(b)SP4T. . . . . . . . . . . . . . . . . . . . 36
Figure3.8: Micro-photographoftheseries-shuntSP4Tswitch. . . . . . . . . . . . . . 37
Figure3.9: Measuredandsimulatedinsertionlossoftheseries-shuntSP4Tswitch. . . 39
Figure3.10: Measuredandsimulatedreturnlossoftheseries-shuntSP4Tswitch. . . . 39
Figure3.11: Measuredandsimulatedisolationoftheseries-shuntSP4Tswitch. . . . . 40
Figure3.12: Measured(solid)andsimulated(dashed)P1dBandIIP3oftheseries-shunt
SP4Tswitch. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure3.13: Simulatedswitchingtimeoftheseries-shuntSP4Tswitchat20GHz. Sim-
ilarresultsareachievedat40GHzand60GHz.. . . . . . . . . . . . . . . 41
Figure3.14: Micrographof(a)SPDTand(b)SP4Tswitches(figuresarenottothesame
scale). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure3.15: Measuredandsimulatedinsertionlossandreturnlossfor(a)SPDTand(b)
SP4Tswitches. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure3.16: Measuredandsimulatedisolationfor(a)SPDTand(b)SP4Tswitches. . . 44
Figure3.17: MeasuredIIP3of(a)SPDTand(b)SP4Tswitchesat60GHz. . . . . . . . 45
Figure4.1: (a) Conceptual block diagram of Butler matrix used in a switched-beam
system,and(b)circuitdiagramofan8×8Butlermatrix. . . . . . . . . . . 49
Figure4.2: Transmissionlineandlumpedelementbased(a)90◦ coupler,and(b)phase
delaycell.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Figure4.3: On-chipCPWcrossoverstructure: topview,cross-sectionalview,andsim-
ulatedcouplingbetweentheports. . . . . . . . . . . . . . . . . . . . . . 52
Figure4.4: (a) Microphotograph of the 8×8 Butler matrix (2.5×1.9 mm2), and (b) a
45◦ phasedelaycellwitha90◦ coupler. . . . . . . . . . . . . . . . . . . . 53
Figure4.5: (a)Pictureoftheassembled8×8Butlermatrixboard,and(b)close-upview
ofthesiliconchiponaTeflonboard. . . . . . . . . . . . . . . . . . . . . 54
Figure4.6: Matching network for the 8×8 Butler matrix chip. 8 of them are used on
eachsideofthechip: antennaportsandbeamports. . . . . . . . . . . . . 54
viii
Figure4.7: 3-element layout of the angled-dipole antenna, the measured pattern at 5.5
GHzandreturnloss(centerelementshown). . . . . . . . . . . . . . . . . 55
Figure4.8: MicrophotographandmeasuredS-parametersofthequadraturecouplertest
cell(Port3isloadedon-chipformeasurementpurposes). . . . . . . . . . 57
Figure4.9: Measuredreturnloss: beamportsandantennaports. . . . . . . . . . . . . 58
Figure4.10: (a) Measured normalized beam patterns at 5.5 GHz (4L-3L-2L-1L-1R-2R-
3R-4Rfromlefttoright),and(b)measuredgainvs. frequency. . . . . . . 59
Figure4.11: Measurednormalizedpatternforeachbeamat5-6GHzwith0.2GHzsteps.
Beams1L-4Laresymmetricalwithbeams1R-4Randnotshown. . . . . . 61
Figure4.12: Measured gain at 7◦ (1R), 22◦ (2R), 39◦ (3R), and 61◦ (4R) for different
beamsresultingfromthe8×8Butlermatrix. . . . . . . . . . . . . . . . . 62
Figure4.13: (a)ModifiedButlermatrixblockdiagramfornearcontinuousangularcov-
erage,and(b)simulatedpatternswith0◦ and∆Φ. . . . . . . . . . . . . . 63
Figure4.14: Blockdiagramof4×4Butlermatrix. . . . . . . . . . . . . . . . . . . . . 65
Figure4.15: IBM8RFprocessstack-up,on-chipcross-overlayout,andsimulatedisola-
tionbetweenthedifferentports. . . . . . . . . . . . . . . . . . . . . . . . 65
Figure4.16: (a)Pictureoftheassembled4×4Butlermatrixboard,(b)close-upviewof
the silicon chip on board, (c) microphotograph of the 12 GHz 4×4 Butler
matrixchip(size: 0.85×0.65mm2). . . . . . . . . . . . . . . . . . . . . . 66
Figure4.17: Layout and S-parameters of the cross-over on the Duroid board. Excellent
isolationisachievedusinggroundedCPWlines. . . . . . . . . . . . . . . 66
Figure4.18: Input matching network for the 4×4 Butler matrix. The output matching
networkissimilarandisnotshown. . . . . . . . . . . . . . . . . . . . . . 67
Figure4.19: (a)Measuredbeampatternsat12GHz,and(b)measuredoutputreturnloss. 68
Figure4.20: (a)Measuredpatternsat11-13GHzand(b)measuredgain. . . . . . . . . 69
Figure4.21: Measuredgainat(a)49◦(2R),(b)15◦(1R)forthedifferentbeamsresulting
fromthe4×4Butlermatrix. . . . . . . . . . . . . . . . . . . . . . . . . . 70
FigureA.1: (a) Conceptual block diagram for a microwave-based γ-ray detector, (b)
RLCcircuitmodel. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
FigureA.2: (a) Cross-sectional diagram and (b) top/bottom view of the fabricated 4.5
GHzcavity. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
FigureA.3: SimulatedE-fieldinsidethecavityforTM mode. Notethediscontinuity
010
intheE-fieldslopeattheair-CZTinterface. . . . . . . . . . . . . . . . . . 80
FigureA.4: Measured resonance frequency (f ) and Q for two different cavities after
0
manualtuning. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
FigureA.5: Blockdiagramofthedifferentialgamma-raydetectorwithoptionaltestpath. 82
FigureA.6: (a)Conceptualdiagramoftheclose-inphasenoisedegradationduetocavity
S . (b)MeasuredRFsignalphasenoisebeforeandafterreflectionfromthe
11
high-Qcavity. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
FigureA.7: Injected power (10 µs pulse) using matched switches and corresponding
measuredsignalatthescope. . . . . . . . . . . . . . . . . . . . . . . . . 83
FigureA.8: Testsetupandmeasuredresponsefortheγ-raydetector. . . . . . . . . . . 84
FigureA.9: (a)Initialdual-cavitydesign,(b)currentdistributiononthecavitywalls. . 85
ix
