Technology computer aided design : simulation for VLSI MOSFET

445 Pages·2011·33.17 MB·English

by  Chandan Kumar Sarkar

ElEctrical EnginEEring S
a
r
Responding to recent developments and a growing market for K Technology
a
integrated circuit manufacturing, Technology Computer Aided r
Design: Simulation for VLSI MOSFET examines advanced MOSFET
processes and devices through TCAD numerical simulations. The compuTer
book provides a balanced summary of TCAD and MOSFET basic
concepts, equations, physics, and new technologies related to TCAD
and MOSFET. A firm grasp of these concepts allows for the design Aided design
of better models, thus streamlining the design process, saving time
and money. This book places emphasis on the importance of
modeling and simulations of VLSI MOS transistors and TCAD software.
Providing background concepts involved in the TCAD simulation Simulation for VLSI MOSFET
of MOSFET devices, it presents concepts in a simplified manner,
frequently using comparisons to everyday-life experiences. The book
then explains concepts in depth, with required mathematics and
program code.
This book also details the classical semiconductor physics for
understanding the principle of operations for VLSI MOS transistors,
illustrates recent developments in this area, and analyzes the
evolution of the role of modeling and simulation of MOSFET. The
book also provides exposure to the two most commercially popular
TCAD simulation tools: Silvaco and Sentaurus. R&D cost and
time for electronic product development is drastically reduced by
taking advantage of TCAD tools, making TCAD tools indispensable
for modern VLSI device technologies. VLSI device technologies
provide a means to characterize the MOS transistors and
improve the VLSI circuit simulation procedure. The comprehensive
information and systematic approach to design, characterization,
fabrication, and computation of VLSI MOS transistor through TCAD
tools presented in this book provide a thorough foundation for
the development of models that simplify the design verification
process and make it cost effective.
K14929
ISBN: 978-1-4665-1265-8 Edited by
90000
Chandan Kumar Sarkar
9 781466 512658
K14929_Cover_mech.indd All Pages 4/12/13 12:06 PM

TECHNOLOGY
COMPUTER
AIDED DESIGN
Simulation for VLSI MOSFET

TECHNOLOGY
COMPUTER
AIDED DESIGN
Simulation for VLSI MOSFET
Edited by
Chandan Kumar Sarkar
Boca Raton London New York
CRC Press is an imprint of the
Taylor & Francis Group, an informa business
CRC Press
Taylor & Francis Group
6000 Broken Sound Parkway NW, Suite 300
Boca Raton, FL 33487-2742
© 2013 by Taylor & Francis Group, LLC
CRC Press is an imprint of Taylor & Francis Group, an Informa business
No claim to original U.S. Government works
Version Date: 20130304
International Standard Book Number-13: 978-1-4665-1266-5 (eBook - PDF)
This book contains information obtained from authentic and highly regarded sources. Reasonable efforts have been made
to publish reliable data and information, but the author and publisher cannot assume responsibility for the validity of all
materials or the consequences of their use. The authors and publishers have attempted to trace the copyright holders of all
material reproduced in this publication and apologize to copyright holders if permission to publish in this form has not
been obtained. If any copyright material has not been acknowledged please write and let us know so we may rectify in any
future reprint.
Except as permitted under U.S. Copyright Law, no part of this book may be reprinted, reproduced, transmitted, or utilized in
any form by any electronic, mechanical, or other means, now known or hereafter invented, including photocopying, micro-
filming, and recording, or in any information storage or retrieval system, without written permission from the publishers.
For permission to photocopy or use material electronically from this work, please access www.copyright.com (http://www.
copyright.com/) or contact the Copyright Clearance Center, Inc. (CCC), 222 Rosewood Drive, Danvers, MA 01923, 978-750-
8400. CCC is a not-for-profit organization that provides licenses and registration for a variety of users. For organizations that
have been granted a photocopy license by the CCC, a separate system of payment has been arranged.
Trademark Notice: Product or corporate names may be trademarks or registered trademarks, and are used only for identi-
fication and explanation without intent to infringe.
Visit the Taylor & Francis Web site at
http://www.taylorandfrancis.com
and the CRC Press Web site at
http://www.crcpress.com
To our family members

Contents
Preface ......................................................................................................................ix
The Editor .............................................................................................................xiii
Contributors ...........................................................................................................xv
1 Introduction to Technology Computer Aided Design ............................1
Samar K. Saha
2 Basic Semiconductor and Metal-Oxide-Semiconductor (MOS)
Physics .............................................................................................................45
Swapnadip De
3 Review of Numerical Methods for Technology Computer Aided
Design (TCAD) ...........................................................................................145
Kalyan Koley
4 Device Simulation Using ISE-TCAD .....................................................155
N. Mohankumar
5 Device Simulation Using Silvaco ATLAS Tool ....................................187
Angsuman Sarkar
6 Study of Deep Sub-Micron VLSI MOSFETs through TCAD ...........237
Srabanti Pandit
7 MOSFET Characterization for VLSI Circuit Simulation ...................267
Soumya Pandit
8 Process Simulation of a MOSFET Using TSUPREM-4 and Medici ....363
Atanu Kundu
vii