Journal of Crystal Growth 1999: Vol 205 Index

9 Pages·1999·1.6 MB·English

vourna.or GRYSTAL
GROWTH
ELSEVIER Journal of Crystal Growth 205 (1999) 624-629
www.elsevier.nl/locate/jcrysgro
Author index
Alexandru, H.V., KDP kinetics and dislocation Caccavale, F., see Bermudez, V. 205 (1999) 328
efficiency of growth 205 (1999) 215 Cadoret, R., Growth mechanisms of (0 0 .1)GaN
Amano, T., see Ogasawara, M. 205 (1999) 489 substrates in the hydride vapour-phase
Apostolaki, A., see Mavrilas, D. 205 (1999) 554 method: surface diffusion, spiral growth,
Ashida, T., see Maruyama, M. 205 (1999) 391 H, and GaCl; mechanisms 205 (1999) 123
Callejo, D., see Bermudez, V. 205 (1999) 328
Baldochi, S.L., K. Shimamura, K. Nakano, N. Cantelar, E., J.A. Sanz-Garcia and F. Cusso,
Mujilatu and T. Fukuda, Ce-doped LiYF, Growth of LiNbO; co-doped with Er**
growth under CF, atmosphere 205 (1999) 537 Yb** 205 (1999) 196
Barbier, A., see Langer, R. 205 (1999) 31 Carpenter, J.F., see Webb, J.N. 205 (1999) 563
Barski, A., see Langer, R. 205 (1999) 31 Carvalho, J.F. and A.C. Hernandes, Large
Baruchel, J., see Ferrari, C. 205 (1999) 474 Bi, »TiOp single crystals: a study of intrinsic
Batina, N., see Moreno, A. 205 (1999) 375 defects and growth parameters 205 (1999) 185
Batur, C., A. Srinivasan, W.M.B. Duval, N.B. Chen, H., see Zhang, S. 205 (1999) 453
Singh and D. Golovaty, On-line contrel of Chen, J., N. Zhuang, S. Lin, F. Guo and X. Hu,
solid-liquid interface by state feedback 205 (19993)9 5 Theoretical morphology and growth habit
Bazarov, L.Sh., see Urakaev, F.Kh. 205 (19992)2 3 of rubidium hydrogen selenate crystals 205 (1999) 584
Beaumont, B., see Lahreche, H. 205 (19992)4 5 Chen, Y.F., see Guo, L.W. 205 (1999) 531
Belokoneva, E.L., see Leonyuk, N.I. 205 (19993)6 1 Chen, Z., see Zhang, S. 205 (1999) 453
Bennema, P., see de Vries, S.A. 205 (19992)0 2 Chu, F., see Garrett, J.D. 205 (1999) 515
Bennett, S.L., see de Vries, S.A. 205 (19992)0 2
Coluci, V.R., M.A. Cotta and M.M.G. de Car-
Benz, K.W., see Boschert, St. 205 (1999) 92
valho, Growth of Be-doped homoepitaxial
Bermtdez, V., D. Callejo, F. Caccavale and E. GaAs films on rough substrates 205 (1999) 36
Dieguez, On the effect of Li diffusion in
Cotta, M.A., see Coluci, V.R. 205 (1999) 36
Er-doped bulk periodic poled lithium nio-
Cui, W.H., see Hu, X.B. 205 (1999) 323
bate crystals 205 (1999) 328
Cuss0, F., see Cantelar, E. 205 (1999) 196
Bhat, H.L., see Brahadeeswaran, S. 205 (1999) 548
Custodio, M.C.C. and A.C. Hernandes, Tellu-
Bocelli, G., see Leonyuk, N.I. 205 (1999) 361
rium-rich phase in n-type bismuth telluride
Boschert, St., A.N. Danilewsky and K.W. Benz,
Numerical simulation oft he influence of the crystals grown by the Bridgman technique 205 (1999) 523
orbiters attitude on the pg growth of InP: S
crystals from an In solution during the Daniels-Race, T., see Li, H. 205 (1999) 613
EURECA-1 flight 205 (1999) 92 Danilewsky, A.N., see Boschert, St. 205 (1999) 92
Brahadeeswaran, S., V. Venkataramanan and De Carvalho, M.M.G., see Coluci, V.R. 205 (1999) 36
H.L. Bhat, Nonlinear optical activity of De Vries, S.A., P. Goedtkindt, W.J. Huisman,
anhydrous and hydrated sodium _p- M.J. Zwanenburg, R. Feidenhans’l, S.L.
nitrophenolate 205 (1999) 548 Bennett, D.-M. Smilgies, A. Stierle, J.J. De
Brandon, S., see Liu, Y. 205 (1999) 333 Yoreo, W.J.P. van Enckevort, P. Bennema
Brown, R.A., see Lipchin, A. 205 (1999) 71 and E. Vlieg, X-ray diffraction studies of
Bubner, N., O. Klein, P. Philip, J. Sprekels and potassium dihydrogen phosphate (KDP)
K. Wilmanski, A transient model for the crystal surfaces 205 (1999) 202
sublimation growth of silicon carbide single De Yoreo, J.J., see de Vries, S.A. 205 (1999) 202
crystals 205 (1999) 294 Diéguez, E., see Bermudez, V. 205 (1999) 328
0022-0248/99/$-see front matter © 1999 Elsevier Science B.V. All rights reserved.
PIT: S0022-0248(99)00421-2
vourna.or GRYSTAL
GROWTH
ELSEVIER Journal of Crystal Growth 205 (1999) 624-629
www.elsevier.nl/locate/jcrysgro
Author index
Alexandru, H.V., KDP kinetics and dislocation Caccavale, F., see Bermudez, V. 205 (1999) 328
efficiency of growth 205 (1999) 215 Cadoret, R., Growth mechanisms of (0 0 .1)GaN
Amano, T., see Ogasawara, M. 205 (1999) 489 substrates in the hydride vapour-phase
Apostolaki, A., see Mavrilas, D. 205 (1999) 554 method: surface diffusion, spiral growth,
Ashida, T., see Maruyama, M. 205 (1999) 391 H, and GaCl; mechanisms 205 (1999) 123
Callejo, D., see Bermudez, V. 205 (1999) 328
Baldochi, S.L., K. Shimamura, K. Nakano, N. Cantelar, E., J.A. Sanz-Garcia and F. Cusso,
Mujilatu and T. Fukuda, Ce-doped LiYF, Growth of LiNbO; co-doped with Er**
growth under CF, atmosphere 205 (1999) 537 Yb** 205 (1999) 196
Barbier, A., see Langer, R. 205 (1999) 31 Carpenter, J.F., see Webb, J.N. 205 (1999) 563
Barski, A., see Langer, R. 205 (1999) 31 Carvalho, J.F. and A.C. Hernandes, Large
Baruchel, J., see Ferrari, C. 205 (1999) 474 Bi, »TiOp single crystals: a study of intrinsic
Batina, N., see Moreno, A. 205 (1999) 375 defects and growth parameters 205 (1999) 185
Batur, C., A. Srinivasan, W.M.B. Duval, N.B. Chen, H., see Zhang, S. 205 (1999) 453
Singh and D. Golovaty, On-line contrel of Chen, J., N. Zhuang, S. Lin, F. Guo and X. Hu,
solid-liquid interface by state feedback 205 (19993)9 5 Theoretical morphology and growth habit
Bazarov, L.Sh., see Urakaev, F.Kh. 205 (19992)2 3 of rubidium hydrogen selenate crystals 205 (1999) 584
Beaumont, B., see Lahreche, H. 205 (19992)4 5 Chen, Y.F., see Guo, L.W. 205 (1999) 531
Belokoneva, E.L., see Leonyuk, N.I. 205 (19993)6 1 Chen, Z., see Zhang, S. 205 (1999) 453
Bennema, P., see de Vries, S.A. 205 (19992)0 2 Chu, F., see Garrett, J.D. 205 (1999) 515
Bennett, S.L., see de Vries, S.A. 205 (19992)0 2
Coluci, V.R., M.A. Cotta and M.M.G. de Car-
Benz, K.W., see Boschert, St. 205 (1999) 92
valho, Growth of Be-doped homoepitaxial
Bermtdez, V., D. Callejo, F. Caccavale and E. GaAs films on rough substrates 205 (1999) 36
Dieguez, On the effect of Li diffusion in
Cotta, M.A., see Coluci, V.R. 205 (1999) 36
Er-doped bulk periodic poled lithium nio-
Cui, W.H., see Hu, X.B. 205 (1999) 323
bate crystals 205 (1999) 328
Cuss0, F., see Cantelar, E. 205 (1999) 196
Bhat, H.L., see Brahadeeswaran, S. 205 (1999) 548
Custodio, M.C.C. and A.C. Hernandes, Tellu-
Bocelli, G., see Leonyuk, N.I. 205 (1999) 361
rium-rich phase in n-type bismuth telluride
Boschert, St., A.N. Danilewsky and K.W. Benz,
Numerical simulation oft he influence of the crystals grown by the Bridgman technique 205 (1999) 523
orbiters attitude on the pg growth of InP: S
crystals from an In solution during the Daniels-Race, T., see Li, H. 205 (1999) 613
EURECA-1 flight 205 (1999) 92 Danilewsky, A.N., see Boschert, St. 205 (1999) 92
Brahadeeswaran, S., V. Venkataramanan and De Carvalho, M.M.G., see Coluci, V.R. 205 (1999) 36
H.L. Bhat, Nonlinear optical activity of De Vries, S.A., P. Goedtkindt, W.J. Huisman,
anhydrous and hydrated sodium _p- M.J. Zwanenburg, R. Feidenhans’l, S.L.
nitrophenolate 205 (1999) 548 Bennett, D.-M. Smilgies, A. Stierle, J.J. De
Brandon, S., see Liu, Y. 205 (1999) 333 Yoreo, W.J.P. van Enckevort, P. Bennema
Brown, R.A., see Lipchin, A. 205 (1999) 71 and E. Vlieg, X-ray diffraction studies of
Bubner, N., O. Klein, P. Philip, J. Sprekels and potassium dihydrogen phosphate (KDP)
K. Wilmanski, A transient model for the crystal surfaces 205 (1999) 202
sublimation growth of silicon carbide single De Yoreo, J.J., see de Vries, S.A. 205 (1999) 202
crystals 205 (1999) 294 Diéguez, E., see Bermudez, V. 205 (1999) 328
0022-0248/99/$-see front matter © 1999 Elsevier Science B.V. All rights reserved.
PIT: S0022-0248(99)00421-2
Author index 625
Dincer, T.D., G.M. Parkinson, A.L. Rohl and Gibart, P., see Lahréche, H. 205 (1999) 245
M.I. Ogden, Crystallisation of z-lactose Gillies, D.C., see Ghaddar, C.K. 205 (1999) 97
monohydrate from dimethyl sulfoxide Gladic¢, J., see Vucic, Z. 205 (1999) 136
(DMSO) solutions: influence of f-lactose 205 (1999) 368
Glatz, C.E., see Webb, J.N. 205 (19995)6 3
Dougenis, D., see Mavrilas, D. 205 (1999) 554
Goedtkindt, P., see de Vries, S.A. 205 (19992)0 2
Drebushchak, T.N., see Urakaev, F.Kh. 205 (1999) 223
Goldberg, M., see Gafni, G. 205 (1999) 618
Drigo, A.V., see Ferrari, C. 205 (1999) 474
Durbin, S.D., see Yoshikawa, A. 205 (1999) 305 Golovaty, D., see Batur, C. 205 (1999) 395
Durbin, S.D., see Nishimura, Y. 205 (1999) 503 Golubev, S.V., O.S. Pokrovsky and V.S. Sav-
Duval, W.M.B., see Batur, C. 205 (1999) 395 enko, Unseeded precipitation of calcium and
magnesium phosphates from modified sea-
water solutions 205 (1999) 354
Ebiko, Y., see Shiramine, K.-i. 205 (1999) 461
Eguchi, M., see Ma, M. 205 (1999) 50 Gordeeva, V.I., see Urakaev, F.Kh. 205 (1999) 223
Eisenmenger-Sittner, C., The application of rate Gotoh, S., see Kakinuma, H. 205 (1999) 25
equations to describe nucleation and growth Grandum, S. A. Yabe, K. Nakagomi, M.
on rough substrates: tin and lead on alumi- Tanaka, F. Takemura, Y. Kobayashi and
nium 205 (1999) 441 P.-E. Frivik, Analysis of ice crystal growth
Epelbaum, B.M., see Yoshikawa, A. 205 (1999) 305 for a crystal surface containing adsorbed
antifreeze proteins 205 (1999) 382
Feidenhans’l, R., see de Vries, S.A. 205 (1999) 202 Grzegory, I., see Langer, R. 205 (1999) 31
Feklistov, V.V., see Urakaev, F.Kh. 205 (1999) 223 Guan, Q.C., see Hu, X.B. 205 (1999) 323
Ferrari, C., S. Gennari, S. Franchi, L. Lazzarini, Guo, F., see Chen, J. 205 (1999) 584
M. Natali, F. Romanato, A.V. Drigo and J. Guo, L.W., H.J. Ko, H. Makino, Y.F. Chen, K.
Baruchel, Investigation by synchrotron radi- Inaba and T. Yao, Epitaxial growth of
ation X-ray topography of lattice tilt forma- MnO, film on MgO(001) substrate by
tion in partially released InGaAs/GaAs plasma-assisted molecular beam epitaxy
compositionally graded layers 205 (1999) 474 (MBE) 205 (1999) 531
Franchi, S., ~~2 Ferrari, C. 205 (1999) 474
Frivik, P.-E., see Grandum, S. 205 (1999) 382 Harada, K., see Ishii, M. 205 (19991)9 1
Frumin, N., see Gartstein, E. 205 (1999) 64
Hasegawa, K., see Yoshikawa, A. 205 (1999) 305
Fuierer, P.A., see Sun, S. 205 (1999) 177
Heime, K., see Lim, P.H. 205 (1999) 1
Fujiwara, S., Y. Namikawa and T. Kotani,
Henrykhson, R.V., see Leonyuk, N.I. 205 (19993)6 1
Growth of 1” diameter ZnSe single crystal
by the rotational chemical vapor transport Hernandes, A.C., see Carvalho, J.F. 205 (19991)8 5
method 205 (1999) 43 Hernandes, A.C., see Custodio, M.C.C. 205 (1999) 523
Fuke, S., see Ito, T. 205 (1999) 20 Hernandez-Pérez, T., see Moreno, A. 205 (1999) 375
Fukuda, T., see Yoshikawa, A. 205 (1999) 305 Heuken, M., see Lim, P.H. 205 (1999) 1
Fukuda, T., see Baldochi, S.L. 205 (1999) 537 Higuchi, M., see Maida, S. 205 (1999) 317
Hiyamizu, S., see Nakajima, K. 205 (1999) 270
Gafni, G., D. Septier and M. Goldberg, Effect of Ho, C.H., see Tiong, K.K. 205 (1999) 543
chondroitin sulfate and biglycan on the crys- Horisaki, Y., see Shiramine, K.-i. 205 (1999) 461
tallization of hydroxyapatite under physio-
Hosoi, N., see Takeda, S. 205 (1999) 11
logical conditions 205 (1999) 618
Hosokawa, E., see Kishida, S. 205 (1999) 284
Garrett, J.D., P. Peralta, J.R. Michael, F. Chu,
Hu, X., see Chen, J. 205 (1999) 584
K.J. McClellan and T.E. Mitchell, Growth
of oriented Cll, MoSi, bicrystals using Hu, X.B., J.Y. Wang, W.H. Cui, Q.C. Guan, R.B.
a modified Czochralski technique 205 (1999) 515 Song, J.Q. Wei, Y.G. Liu, J.H. Jiang and Y.L.
Gartstein, E., D. Mogilyanski and N. Frumin, Tian, Growth defects in flux grown
Interfacial microstructure in Si-on-sapphire RbTiOAsO, crystals observed with white-
heterostructure 205 (1999) 64 beam synchrotron radiation topography 205 (1999) 323
Gennari, S., see Ferrari, C. 205 (1999) 474 Huang, Y.S., see Tiong, K.K. 205 (1999) 543
Geszti, O., see Safran, G. 205 (1999) 153 Huisman, W.J., see de Vries, S.A. 205 (1999) 202
Ghaddar, C.K., C.K. Lee, S. Motakef and D.C. Hwang, N.M., Deposition and simultaneous
Gillies, Numerical simulation of THM etching of Si in the chemical vapor depos-
growth of CdTe in presence of rotating mag- ition (CVD) process: approach by the
netic fields (RMF) 205 (1999) 97 charged cluster model 205 (1999)
626 Author index
Inaba, K., see Guo, L.W. 205 (1999) 531 Kotani, T., see Fujiwara, S. 205 (1999) 43
Ishii, M., K. Harada, N. Senguttuvan, M. Koutsoukos, P.G., see Mavrilas, D. 205 (1999) 554
Kobayashi and I. Yamaga, Crystal growth Kozhbakhteeva, D.E., see Leonyuk, N.I. 205 (1999) 361
of BSO (Bi,Si;0,,) by vertical Bridgman Kulman, N.V., see Leonyuk, N.1. 205 (1999) 361
method 205 (1999) 191 Kuno, Y., see Takeda, S. 205 (1999) 11
Ito, T.. K. Ohtsuka, K. Kuwahara, M. Sumiya, Kuwahara, K., see Ito, T. 205 (1999) 20
Y. Takano and S. Fuke, Effect of AIN buffer
layer deposition conditions on the proper- Lahréche, H., P. Vennégués, B. Beaumont and
ties of GaN layer 205 (1999) 20 P. Gibart, Growth of high-quality GaN by
Itoh, M., see Ogasawara, M. 205 (1999) 489 low-pressure metal-organic vapour phase
Itoh, S., see Shiramine, K.-i. 205 (1999) 461 epitaxy (LP-MOVPE) from 3D islands and
lateral overgrowth 205 (1999) 245
Jiang, J.H., see Hu, X.B. 205 (1999) 323 Langer, R., A. Barski, A. Barbier, G. Renaud, M.
Jiang, W., see Xu, H. 205 (1999) 481 Leszczynski, I. Grzegory and S. Porowski,
Jiang, W.H., H.Z. Xu, B. Xu, J. Wu, X.L. Ye, Strain relaxation in AIN epitaxial layers
H.Y. Liu, W. Zhou, Z.Z. Sun, Y.F. Li, J.B. grown on GaN single crystals 205 (1999) 31
Liang and Z.G. Wang, Fabrication of In- Lazzarini, L., see Ferrari, C. 205 (1999) 474
GaAs quantum dots with an underlying Lee, C.K., see Ghaddar, C.K. 205 (1999) 97
InGaAlAs layer on GaAs(1 00) and high Lee, J.-S.,S. Sugou and Y. Masumoto, Spontan-
index substrates by molecular beam epitaxy 205 (1999) 607 eous nanostructure formation on GaAs
Jie, W., Y. Li and X. Liu, Solute redistribution (2 1 1)B substrate 205 (1999) 467
during the accelerated crucible rotation Lee, W.-H. and P. Shen, On the coalescence and
Bridgman growth of Hg, -,.Mn,Te 205 (1999) 510 twinning of cubo-octahedral CeO, conden-
Juarez-Martinez, G., see Moreno, A. 205 (1999) 375 sates 205 (1999) 169
Leonyuk, N.I., E.L. Belokoneva, G. Bocelli, L.
Kakinuma, H., T. Ueda, S. Gotoh and C. Righi, E.V. Shvanskii, R.V. Henrykhson,
Yamagishi, Reduction of threading disloca- N.V. Kulman and D.E. Kozhbakhteeva,
tions in GaAs on Si by the use of intermedi- High-temperature crystallization and X-ray
ate GaAs buffer layers prepared under high characterization of Y,SiO;, Y,Si,O0, and
V-III ratios 205 (1999) 25 LaBSiO,; 205 (1999) 361
Kapolos, J., see Mavrilas, D. 205 (1999) 554 Leszczynski, M., see Langer, R. 205 (1999) 31
Kartavykh, A.V., E.S. Kopeliovich, M.G. Li, G., see Zhang, S. 205 (1999) 453
Mil’vidskii and V.V. Rakov, Anomalous Li, H., Q. Zhuang, X. Kong, Z. Wang and T.
effects of dopant distribution in Ge single Daniels-Race, Self-organization of wire-like
crystals grown by FZ-technique aboard InAs nanostructures on InP 205 (19996)1 3
spacecrafts 205 (1999) 497 Li, Y. see Jie, W. 205 (19995)1 0
Kikuchi, H., see Otsuka, N. 205 (1999) 253 Li, Y.F., see Jiang, W.H. 205 (19996)0 7
Kishida, S.. E. Hosokawa and W.Y. Liang, Liang, J.B., see Jiang, W.H. 205 (19996)0 7
Growth of Bi,Sr,CaCu,O, single crystals by Liang, W.Y., see Kishida, S. 205 (19992)8 4
a self-flux method using precursors 205 (19992)8 4 Liao, P.C., see Tiong, K.K. 205 (19995)4 3
Klein, O., see Bubner, N. 205 (19992)9 4 Lim, P.H., B. Schineller, O. Schén, K. Heime
Knight, C.A., see Maruyama, M. 205 (19993)9 1 and M. Heuken, Photoluminescence of
Ko, H.J., see Guo, L.W. 205 (19995)3 1 GaN: Mg grown by metalorganic vapor-
Kobashi, K., see Tachibana, T. 205 (19991)6 3 phase epitaxy (MOVPE) 205 (1999) 1
Kobayashi, M., see Ishii, M. 205 (19991)9 1 Lin, S., see Chen, J. 205 (1999) 584
Kobayashi, Y., see Grandum, S. 205 (19993)8 2 Lipchin, A. and R.A. Brown, Comparison of
Kodaira, K., see Maida, S. 205 (19993)1 7 three turbulence models for simulation of
Kodama, S., see Nakajima, K. 205 (19992)7 0 melt convection in Czochralski crystal
Komatsu, H., see Nishimura, Y. 205 (19995)0 3 growth of silicon 205 (1999) 71
Komatsu, H., see Takiguchi, H. 205 (19995)7 5 Liu, H.Y., see Jiang, W.H. 205 (1999) 607
Komatsu, M., F. Wang, N. Tanaka, H. Zama Liu, X., see Jie, W. 205 (1999) 510
and T. Morishita, Homoepitaxial growth of Liu, Y., A. Virozub and S. Brandon, Facetting
NdBa,Cu;0,_, films by metalorganic during directional growth ofo xides from the
chemical vapor deposition 205 (1999) 277 melt: coupling between thermal fields, kinet-
Kong, X., see Li, H. 205 (1999) 613 ics and melt/crystal interface shapes 205 (1999) 333
Kopeliovich, E.S., see Kartavykh, A.V. 205 (1999) 497 Liu, Y.G., see Hu, X.B. 205 (1999) 323
Koster, J.N., see Yin, H. 205 (1999) 590 Lu, J., see Zhang, S. 205 (1999) 453
Author index 627
Lu, J., see Zhang, S. 205 (1999) 453 Namikawa, Y., see Fujiwara, S. 205 (1999) 43
Lu, P., see Sun, S. 205 (1999) 177 Natali, M., see Ferrari, C. 205 (1999) 474
Nishimura, Y., S. Miyashita, $.D. Durbin, T.
Ma, M., T. Ogawa, M. Watanabe and M. Nakada, G. Sazaki and H. Komatsu, New
Eguchi, Study on defects in CZ-Si crystals growth method of oxide crystals by PO,
grown under three different cusp magnetic change applied to SmBa,Cu;O, single
fields by infrared light scattering tomo- crystals 205 (1999) 503
graphy 205 (1999) 50 Nishizawa, J.-i., see Otsuka, N 205 (1999) 253
Maida, S., M. Higuchi and K. Kodaira, Growth
of Bi, ,SiOz9 single crystals by the pulling- Ogasawara, M., M. Mitsuhara, M. Itoh and T.
down method with continuous feeding 205 (1999) 317 Amano, Effects of increased growth rate of
Makino, H., see Guo, L.W. 205 (1999) 531 well layer on 2.1% compressive strained
Malicsko, L., see Safran, G. 205 (1999) 153 InAsP-MQWs_ grown by metalorganic
Maruyama, M., T. Ashida and C.A. Knight, molecular beam epitaxy (MOMBE) 205 (1999) 489
Disk crystals of ice grown in air-free water: Ogawa, T., see Ma, M. 205 (1999) 50
no effect of dissolved air on the morphology 205 (1999) 391 Ogden, M.I1., see Dincer, T.D. 205 (1999) 368
Masumoto, Y., see Lee, J.-S. 205 (1999) 467 Ohtsuka, K., see Ito, T. 205 (1999) 20
Mavrilas, D., A. Apostolaki, J. Kapolos, P.G. Ohtsuka, M., A numerical simulation model for
Koutsoukos, M. Melachrinou, V. Zolota molecular-beam epitaxial (MBE) growth on
and D. Dougenis, Development of bio- nonplanar surfaces 205 (1999) 112
prosthetic heart valve calcification in vitro Otsuka, N., J.-i. Nishizawa, H. Kikuchi and Y.
and in animal models: morphology and Oyama, Seif-limiting growth of InP by alter-
composition 205 (19995)5 4 nate trimethylindium and tertiarybutylphos-
McClellan, K.J., see Garrett, J.D. 205 (19995)1 5 phine supply in ultrahigh vacuum 205 (1999) 253
McPherson, A., see Moreno, A. 205 (19993)7 5 Oyama, Y., see Otsuka, N. 205 (1999) 253
Meera, K., see Srinivasan, K. 205 (19994)5 7
Melachrinou, M., see Mavrilas, D. 205 (19995)5 4 Parkinson, G.M., see Dincer, T.D. 205 (1999) 368
Meshcheryakovy, I.N., see Urakaev, F.Kh. 205 (19992)2 3 Peralta, P., see Garrett, J.D. 205 (1999) 515
Michael, J.R., see Garrett, J.D. 205 (19995)1 5 Philip, P., see Bubner, N. 205 (1999) 294
Mil’vidskii, M.G., see Kartavykh, A.V. 205 (19994)9 7 Pokrovsky, O.S., see Golubev, S.V. 205 (1999) 354
Mitchell, T.E., see Garrett, J.D. 205 (19995)1 5 Porowski, S., see Langer, R. 205 (1999) 31
Mitsuhara, M., see Ogasawara, M. 205 (19994)8 9
Miyashita, S., see Nakajima, K. 205 (19992)7 0 Radnoczi, G., see Safran, G. 205 (1999) 153
Miyashita, S., see Nishimura, Y. 205 (19995)0 3 Rakov, V.V., see Kartavykh, A.V. 205 (1999) 497
Miyashita, S., see Takiguchi, H. 205 (19995)7 5 Ramasamy, P., see Srinivasan, K. 205 (1999) 457
Mogilyanski, D., see Gartstein, E. 205 (1999) 64 Randolph, T.W., see Webb, J.N. 205 (1999) 563
Moreno, A., G. Juarez-Martinez, T. Hernan- Rempel, A.W. and M.G. Worster, The interac-
dez-Péerez, N. Batina, M. Mundo and A. tion between a particle and an advancing
McPherson, Physical and chemical proper- solidification front 205 (1999) 427
ties of gels. Application to protein nucleation Renaud, G., see Langer, R. 205 (1999) 31
control in the gel acupuncture technique 205 (19993)7 5 Righi, L., see Leonyuk, N.1. 205 (1999) 361
Morishita, T., see Komatsu, M. 205 (19992)7 7 Rohl, A.L., see Dincer, T.D. 205 (1999) 368
Motakef, S., see Ghaddar, C.K. 205 (1999) 97 Romanato, F., see Ferrari, C. 205 (1999) 474
Mujilatu, N., see Baldochi, S.L. 205 (19995)3 7
Mundo, M., see Moreno, A. 205 (19993)7 5 Safran, G., L. Malicsko, O. Geszti and G. Rad-
Muto, S., see Shiramine, K.-i. 205 (19994)6 1 noczi, The formation of (001) oriented
Ag,Se films on amorphous and polycrystal-
Nakada, T., see Nishimura, Y. 205 (1999) 503 line substrates via polymorphic-phase
Nakada, T., see Takiguchi, H. 205 (1999) 575 transition 205 (19991)5 3
Nakagomi, K., see Grandum, S. 205 (1999) 382 Sanz-Garcia, J.A.. see Cantelar, E. 205 (19991)9 6
Nakajima, K., S. Kodama, S. Miyashita, G. Sato, K., see Takiguchi, H. 205 (19995)7 5
Sazaki and S. Hiyamizu, Growth of Ge-rich Savenko, V.S., see Golubev, S.V. 205 (19993)5 4
Si,Ge, —_, single crystal with uniform com- Savintsev, Yu.P., see Urakaev, F.Kh. 205 (19992)2 3
position (x = 0.02) on a compositionally Sazaki, G., see Nakajima, K. 205 (19992)7 0
graded crystal for use as GaAs solar cells 205 (1999) 270 Sazaki, G., see Nishimura, Y. 205 (19995)0 3
Nakano, K., see Baldochi, S.L. 205 (1999) 537 Schineller, B., see Lim, P.H. 205 (1999) 1
Nakata, Y., see Shiramine, K.-i. 205 (1999) 461 Schon, O., see Lim, P.H. 205 (1999) 1
628 Author index
Schrage. D.S., A simplified model of dendritic Tomasko, D.L. and M.T. Timko, Tailoring of
growth in the presence of natural convection 205 (1999) 410 specific interactions to modify the morpho-
Senguttuvan, N., see Ishii, M. 205 (1999) 191 logy of naproxen 205 (1999) 233
Septier, D., see Gafni, G. 205 (1999) 618
Shao, Z., see Zhang, S. 205 (1999) 453 Ueda, T., see Kakinuma, H. 205 (1999) 25
Shen, P., see Lee, W.-H. 205 (1999) 169 Urakaev, F.Kh., L.Sh. Bazarov, I.N. Mesh-
Shevchenko, V.S., see Urakaev, F.Kh. 205 (1999) 223 cheryakov, V.V. Feklistov, T.N. Drebush-
Shimamura, K., see Baldochi, S.L. 205 (1999) 537 chak, Yu.P. Savintsev, V.I. Gordeeva and
Shimoyama, K., see Takeda, S. 205 (1999) 11 V.S. Shevchenko, Kinetics of homogeneous
Shiramine, K.-i., Y. Horisaki, D. Suzuki, S. Itoh, nucleation of monodisperse spherical sul-
Y. Ebiko, S. Muto, Y. Nakata and N. phur and anatase particles in water-acid
Yokoyama, TEM observation of threading systems 205 (1999) 223
dislocations in InAs self-assembled quantum
dot structure 205 (19994)6 1 Van Enckevort, W.J.P., see de Vries, S.A. 205 (1999) 202
Shvanskii, E.V., see Leonyuk, N.1. 205 (19993)6 1 Venkataramanan, V., see Brahadeeswaran, S. 205 (1999) 548
Singh, N.B., see Batur, C. 205 (19993)9 5 Vennégues, P., see Lahreche, H. 205 (1999) 245
Skorek, G., see Szade, J. 205 (19992)8 9 Virozub, A., see Liu, Y. 205 (1999) 333
Smilgies, D.-M., see de Vries, S.A. 205 (19992)0 2 Vlieg, E., see de Vries, S.A. 205 (1999) 202
Song, R.B., see Hu, X.B. 205 (19993)2 3 Vucic, Z. and J. Gladi¢, Growth rate of equi-
Sprekels, J., see Bubner, N. 205 (19992)9 4 librium-like-shaped single crystals of
Srinivasan, A., see Batur, C. 205 (19993)9 5 superionic conductor cuprous selenide 205 (1999) 136
Srinivasan, K., K. Meera and P. Ramasamy,
Enhancement of metastable zone width for Waghmare, R.Y., see Webb, J.N. 205 (1999) 563
solution growth of potassium acid phthalate 205 (1999) 457 Wang, F., see Komatsu, M. 205 (1999) 277
Stierle, A., see de Vries, S.A. 205 (1999) 202 Wang, J.Y., see Hu, X.B. 205 (1999) 323
Sugou, S., see Lee, J.-S. 205 (1999) 467 Wang, Z., see Xu, H. 205 (1999) 481
Sumiya, M., see Ito, T. 205 (1999) 20 Wang, Z., see Li, H. 205 (1999) 613
Sun, S.. P. Lu and P.A. Fuierer. Oriented Wang, Z.G., see Jiang, W.H. 205 (1999) 607
bismuth titanate thin films by single-solid- Watanabe, M., see Ma, M. 205 (1999) 50
source metal-organic chemical vapour Webb, J.N.. R.-Y. Waghmare, J.F. Carpenter,
deposition 205 (1999) 177 C.E. Glatz and T.W. Randolph, Pressure
Sun, Z.Z., see Jiang, W.H. 205 (1999) 607 effect on subtilisin crystallization and solu-
Suzuki, D., see Shiramine, K.-i. 205 (1999) 461 bility 205 (19995)6 3
Szade, J.. G. Skorek and A. Winiarski, Surface Wei, J.Q., see Hu, X.B. 205 (19993)2 3
structure of Gd.(Si,Ge), crystals 205 (1999) 289 Wilmanski, K., see Bubner, N. 205 (19992)9 4
Winiarski, A., see Szade, J. 205 (19992)8 9
Tachibana, T., Y. Yokota, K. Kobashi and M. Worster, M.G., see Rempel, A.W. 205 (19994)2 7
Yoshimoto, Heteroepitaxial growth of Wu, J., see Jiang, W.H. 205 (19996)0 7
{11 1}-oriented diamond films on_plati-
num}{1 1 1}/sapphire{0 00 1} substrates 205 (1999) 163 Xu, B., see Xu, H. 205 (1999) 481
Takano, Y., see Ito, T. 205 (1999) 20 Xu, B., see Jiang, W.H. 205 (1999) 607
Takeda, S. Y. Kuno, N. Hosoi and K. Xu, H., W. Jiang, B. Xu, W. Zhou and Z. Wang,
Shimoyama, Extension mechanism of anti- Two-dimensional ordering of self-assembled
phase-boundaries in CuPt B-type ordered In,Ga,_,As quantum dots grown on
GalInP, and (Al,Ga)InP, epitaxial layers 205 (1999) 11 GaAs(3 1 1)B surfaces 205 (1999) 481
Takemura, F., see Grandum, S. 205 (1999) 382 Xu, H.Z., see Jiang, W.H. 205 (1999) 607
Takiguchi, H. J. Yano, T. Nakada, S.
Miyashita, H. Komatsu and K. Sato, Con- Yabe, A., see Grandum, S. 205 (19993)8 2
trol of polymorphic occurrence of behenic Yamaga, I., see Ishii, M. 205 (19991)9 1
acid thin films in physical vapor deposition 205 (1999) 575 Yamagishi, C., see Kakinuma, H. 205 (1999) 25
Tanaka, M., see Grandum, S. 205 (1999) 382 Yano, J., see Takiguchi, H. 205 (19995)7 5
Tanaka, N., see Komatsu, M. 205 (1999) 277 Yao, T., see Guo, L.W. 205 (19995)3 1
Tian, Y.L., see Hu, X.B. 205 (1999) 323 Ye, X.L., see Jiang, W.H. 205 (19996)0 7
Timko, M.T., see Tomasko, D.L. 205 (1999) 233 Yin, H. and J.N. Koster, In situ observation
Tiong, K.K.. P.C. Liao, C.H. Ho and Y‘S. of concentrational _ stratification and
Huang, Growth and characterization of solid-liquid interface morphology during
rhenium-doped MoS, single crystals 205 (1999) 543 Ga-5%In alloy melt solidification 205 (1999) 590
Author index 629
Yokota, Y., see Tachibana, T. 205 (1999) 163 Zama, H., see Komatsu, M. 205 (1999) 277
Yokoyama, N., see Shiramine, K.-1. 205 (1999) 461 Zhang, S., Z. Cheng, J. Lu, G. Li, J. Lu, Z. Shao
Yoshikawa, A., B.M. Epelbaum, K. Hasegawa, and H. Chen, Studies on the effective nonlin-
S$.D. Durbin and T. Fukuda, Microstruc- ear coefficient of GdCa,O(BO;); crystal 205 (1999) 453
tures in oxide eutectic fibers grown by Zhou, W., see Xu, H. 205 (1999) 481
a modified micro-pulling-down method 205 (1999) 305 Zhou, W., see Jiang, W.H. 205 (1999) 607
Yoshimoto, M., see Tachibana, T. 205 (1999) 163 Zhuang, N., see Chen, J. 205 (1999) 584
Yu, F., Structure of the CdTe/Cdp 959ZN94o; T e, Zhuang, Q., see Li, H. 205 (1999) 613
Hg,-,Cd,Te/CdTe, CdTe/GuAs _hetero- Zolota, V., see Mavrilas, D. 205 (1999) 554
junctions 205 (1999) 264 Zwanenburg, M.J., see de Vries, S.A. 205 (1999) 202
vourna.or CRYSTAL
GROWTH
ELSEVIER Journal of Crystal Growth 205 (1999) 630-631
www.elsevier.nl/locate/jcrysgro
Subject index
Apparatus - - of lead bromide 395
- for laser ablation deposition 169 - - of mercury manganese telluride 510
- for study of nucleation and growth 223 - - of oxides 333
- by Czochralski method
Computer simulation - - of bismuth telluride 523
- of molecular beam epitaxy growth 112 - - of bismuth titanate oxide 185
- of silicon carbide growth 294 - - of gadolinium calcium oxide 453
Constitutional supercooling - - of gadolinium silicon germanium 289
- of water solution 382 - - of lithium niobate 196, 328
Convection 43, 71, 97, 410, 497 - - of molybdenum disilicide 515
- - of silicon 50, 71
Device characterization - by floating zone method
~ biomaterials 554 - - of germanium 497
- electronic materials 153 - by micro-pulling down method
— heterojunctions 474 - - of bismuth silicate 317
Diffusional control - - of yttrium aluminum garnet 205
- of lithium niobate 328 - - of yttrium silicate 361
- of mercury manganese telluride 510 - by uniaxial solidification
- of silicon germanium 270 - - of silicon germanium 270
Dissolution — by zone melting
- of naproxen 233 - - of silicon germanium 270
Microgravity, growth under 92
- of cadmium telluride 97
Electronic materials, see Device characterization
Epitaxy, see Thin film growth - of germanium 497
Etching Morphological stability
- chemical 497 - of alpha lactose 368
- of interface 590
- of naproxen 233
Heat flow control
- of rubidium hydrogen selenate 584
- of silicon 71
Heterojunctions, see Device characterization
Hydrodynamics, see Convection Nucleation
- of calcite 554
Kinetics - of gallium nitride 245
- of dislocation 25 - of silver selenide 153
- of growth 36, 123, 153, 215, 223, 333, 382, 391, 441, 531, 554 - of tin and lead on aluminum 441
- of interface control 36, 50, 395 Numbers
- of nucleation 223, 354, 375, 441, 618 - Grashof 43, 410
- of strain relaxation 31 - Peclet 410
- Rayleigh 71, 410
Melt growth technique
- by Bridgman-Stockbarger method Precursor
- - of bismuth silicate 191 - for calcium phosphate 354
- - of gallium indium 590 - for indium phosphide 253
0022-0248/99/$-see front matter © 1999 Elsevier Science B.V. All rights reserved.
PII: $0022-0248(99)00422-4
Subject index
Solid growth technique - - of indium arsenide 461
~- by Ohachi method 136 - - of indium arsenide phosphide 489
Solution growth technique - - of indium gallium aluminum arsenide 607
- by flux method 323, 361 - - of indium gallium arsenide 474, 481, 607
— by gel method 375 - - of indium phosphide 613
- by high hydrostatic pressure 563 - - of manganese oxide 531
- by low temperature method - - theory of growth morphology 112
- - of BSCCO 284 — by vapor phase epitaxy
- — of naproxen 233 - - through chemical vapor deposition
- - of potassium acid phthalate 457 ~ -- of diamond 163
- - of potassium dihydrogen phosphate 215 - — - of gallium nitride 123
— by traveling heater method 92, 97 ~ - - of molybdenum sulphide 543
Stefan problem or moving boundary problem - - - of platinum 163
- of lead bromide 395 - - - theory of simultaneous etching and growth 98
Superconductivity materials, high T, ~ - through evaporation and condensation
- - of BSCCO 284 - - - of behenic acid 575
- - of NBCO 277 - - - of cerium oxide 169
- - of SBCO 503 — - - of gallium nitride 253
Superlattices, multilayers ~ -- of silicon carbide 294
- of III-V compounds 461 - - - of silver selenide 153
- of II-VI compounds 264 ~ - through metalorganic chemical vapor deposition
Surface energy, determination - - - of aluminum gallium indium phosphide 11
- of anatase 223 - - - of bismuth titanate 177
Surface structure - - - of gallium arsenide 25, 36, 467
- of gadolinium silicon germanium 289 ~ - - of gallium indium phosphide 11
— of ice 382 - - - of gallium nitride 1, 20, 245
- of lactose 368 - -- of NBCO 277
- of potassium dihydrogen phosphate 202 - -- of silicon 59,64
- of premelted film 427
Vapor growth technique
Thin film growth, epitaxy — by chemical transport
- by metalorganic molecular beam epitaxy ~ - of zinc selenide 43
- - of aluminum nitride 31 - by chemical vapor deposition
— -— of gallium arsenide 461 - - of silicon 64
- - of gallium nitride 31