Journal of Crystal Growth 1999: Vol 203 Index

8 Pages·1999·2.5 MB·English

sournacor GRYS TAL
ELSEVIER Journal of Crystal Growth 203 (1999) 604-608
Author index
Abe, K., see Nakanishi, H. 203 (1999) 75 Bollen, D., see Bogels, G. 203 (1999) 554
Adair, J.H., see Bell, N.S. 203 (1999) 213 Boufaden, T., see Rebey, A. 203 (1999) 12
Akane, T., M. Sano, H. Okumura, Y. Tubo, Brandt, M.S., see Vogg, G. 203 (1999) 570
T. Ishikawa and S. Matsumoto, Charac- Buijnsters, J.G., see Bogels, G. 203 (1999) 554
terization of gas-source molecular beam
epitaxial growth of strain-compensated
Campion, R.P., see Blant, A.V. 203 (1999) 349
Si, -,-,Ge,C,/Si(0 0 1) heterostructure 203 (1999) 80
Carbonell, L.. G. Mula and S. Tatarenko,
Alawadhi, H., see Miotkowski, I. 203 (1999) 51
Influence of a compressive strain on the
Albrecht, M., see Vogg, G. 203 (1999) 570
stoichiometry of the (00 1)CdTe surface
Audinet, L., see Ricolleau, C. 203 (1999) 486
during molecular beam epitaxy 203 (1999) 61
Chang, J.R., Y.K. Su, D-H. Jaw, H.P. Shiao
Baldochi, S.L., see Santo, A.M.E. 203 (1999) 156
and W. Lin, Metalorganic vapor phase
Ban, V.S., see Deutsch, M. 203 (1999) 412
epitaxy (MOVPE) growth and character-
Becker, P., J. Liebertz and L. Bohaty, Top-
ization of AlInAsSb and AllInAsSb,
seeded growth of bismuth triborate,
InGaAs multiple-quantum-well structures 203 (1999) 481
BiB,O, 203 (1999) 149
Chen Huanchu, see Zhang Shujun 203 (1999) 168
Bell, N.S. and J.H. Adair, Adsorbate effects on
Chen, Q.-S., W.-R. Hu and V. Prasad, Effect of
glycothermally produced a-alumina par-
liquid bridge volume on the instability in
ticle morphology 203 (1999) 213
small-Prandtl-number half zones 203 (1999) 261
Bennema, P., see Bégels, G. 203 (1999) 554
Cheng, T.S., see Blant, A.V. 203 (1999) 349
Benz, K.W., see Schweizer, M. 203 (1999) 500
Cheng Zhenxiang, see Zhang Shujun 203 (1999) 168
Berglund, K.A., see LeCaptain, D.J. 203 (1999) 564
Chian, J.H., see Lan, C.W. 203 (1999) 286
Berglund, K.A., see Schwartz, A.M. 203 (1999) 599
Chinyama, K.G. K.P. O’Donnell, A.
Bermudez, V., M.D. Serrano, P.S. Dutta and
Rosenauer and D. Gerthsen, Morphology
E. Dieguez, Opposite domain formation in
of ultrathin CdSe quantum confinement
Er-doped LiNbO, bulk crystals grown by
layers in ZnSe matrices 203 (1999) 362
the off-centered Czochralski technique 203 (1999) 179
Christoffersen, J., see Christoffersen, M.R. 203 (1999) 234
Bettini, J., see de Castro, M.P.P. 203 (1999) 317
Christoffersen, M.R., N. Seierby, T.B. Zunic
Bhat, H.L., see Udayashankar, N.K. 203 (1999) 333
and J. Christoffersen, Kinetics of dissolu-
Binnewies, M., see Patzke, G.R. 203 (1999) 141
tion of triclinic calcium pyrophosphate
Bicelli, L.P., see Kozlov, V.M. 203 (1999) 255
dihydrate crystals 203 (1999) 234
Blant, A.V., S.V. Novikov, T.S. Cheng, L.B.
Flannery, I. Harrison, R.P. Campion, D. Coldren, L.A., see Hall, E. 203 (1999) 447
Korakakis, E.C. Larkins, Y. Kribes and Croll, A., see Schweizer, M. 203 (1999) 500
C.T. Foxon, Ga-metal inclusions in GaN
grown on sapphire 203 (1999) 349 De Carvalho, M.M., see de Castro, M.P.P. 203 (1999) 317
Bogels, G., J.G. Buijnsters, S.A.C. Verhaegen, De Castro, M.P.P., N.C. Frateschi, J. Bettini,
H. Meekes, P. Bennema and D. Bollen, C.A. Ribeiro and M.M. de Carvalho, Spa-
Morphology and growth mechanism of tial composition dependence in InGaP
multiply twinned AgBr and AgCl needle growth on pre-patterned GaAs substrates
crystals 203 (1999) 554 by chemical beam epitaxy 203 (1999) 317
Bohaty, L., see Becker, P. 203 (1999) 149 Deng Peizhen, see Dong Jun 203 (1999) 163
Boilot, J.P., see Ricolleau, C. 203 (1999) 486 Derby, J.J., see Yeckel, A. 203 (1999) 87
0022-0248/99/$-see front matter © 1999 Elsevier Science B.V. All rights reserved.
PII: S0022-0248(99)00227-4
Author index 605
Deutsch, M., M.C. Gerstenberg, H.F. Gossen- Hamai, M., see Tagami, M. 203 (19995)9 4
berger, V.S. Ban and S.R. Forrest, Macro- Han Jianru, see Zhang Shujun 203 (19991)6 8
scopically ordered thin films of an organic Han, T.P.J., see Duffy, S. 203 (19994)0 5
salt grown by low-pressure organic vapor- Harrison, I., see Blant, A.V. 203 (19993)4 9
phase deposition 203 (1999) 412 Hasegawa, M., see Tanaka, M. 203 (19994)0 0
Devine, K.D., see Salinger, A.G. 203 (1999) 516 Hatta, E., see Iwata, Y. 203 (19991)2 5
Dieguez, E., see Bermudez, V. 203 (1999) 179 Hayafuji, N., see Kadoiwa, K. 203 (1999) 18
Dold, P., see Schweizer, M. 203 (1999) 500 Hennigan, G.L., see Salinger, A.G. 203 (19995)1 6
Dong Jun, Deng Peizhen and Xu Jun, The Heuken, M., see Schwambera, M. 203 (19993)4 0
growth of Cr**, Yb** : yttrium aluminum Higuchi, M., T. Togi and K. Kodaira, Growth
garnet (YAG) crystal and its absorption of rutile single crystals by the pulling-down
spectra properties 203 (1999) 163 method 203 (1999) 450
Doty, F.P., see Yeckel, A. 203 (1999) 87 Hu, W.R., see Wang, W. 203 (1999) 227
Duan, L.H., see Xu, D.P. 203 (1999) 40 Hu, W.R., see Chen, Q:S. 203 (1999) 261
Duffy, S., J.-P.R. Wells, H.G. Gallagher and Hutchinson, S.A., see Salinger, A.G. 203 (1999) 516
T.P.J. Han, Bridgman growth and laser
excitation of LiYF, : Sm** 203 (1999) 405 Imaeda, M., see Kawaguchi, T. 203 (1999) 173
Dutta, P.S., see Bermudez, V. 203 (1999) 179 Imai, M., see Sakai, Y. 203 (1999) 244
Ishikawa, T., see Akane, T. 203 (1999) 80
Ebe, T., Factors determining the saturation of
Iwata, Y., H. Kobayashi, S. Kikuchi, E. Hatta
point defects in growing silicon crystals 203 (1999) 387
and K. Mukasa, In situ reflection high-
El Jani, B., see Rebey, A. 203 (1999) 12
energy electron diffraction (RHEED) ob-
servation of Bi,Te3;/Sb,Te, multilayer film
Ferrari, C., see Jeganathan, K. 203 (19993)2 7
growth 203 (1999) 125
Flannery, L.B., see Blant, A.V. 203 (19993)4 9
Izumi, S., see Kadoiwa, K. 203 (1999) 18
Forrest, S.R., see Wei, J. 203 (19993)0 2
Forrest, S.R., see Deutsch, M. 203 (19994)1 2
Jacobs, K., see Griesche, J. 203 (1999) 45
Foxon, C.T., see Blant, A.V. 203 (19993)4 9
Jaw, D.H., see Chang, J.R. 203 (1999) 481
Frateschi, N.C., see de Castro, M.P.P. 203 (19993)1 7
Jeganathan, K., C. Ferrari and J. Kumar,
Fukuda, T., see Kawaguchi, T. 203 (19991)7 3
Structural characterisation of remelt liquid
phase epitaxy (LPE) grown AlGaAs hetero-
Gacoin, T., see Ricolleau, C. 203 (1999) 486
epitaxial layer 203 (1999) 327
Gallagher, H.G., see Duffy, S. 203 (1999) 405
Gandais, M., see Ricolleau, C. 203 (1999) 486 Jiang, R., see Liu, S. 203 (1999) 454
Garcia, V.M., P.K. Nair and M.T.S. Nair,
Kadoiwa, K., S. Izumi, Y. Yamamoto, N. Hay-
Copper selenide thin films by chemical
bath deposition 203 (1999) 113 afuji and T. Sonoda, Novel InGaAs con-
Gerstenberg, M.C., see Deutsch, M. 203 (1999) 412 tact layer growth for hetero-junction
Gerthsen, D., see Chinyama, K.G. 203 (1999) 362 bipolar transistors (HBTs) by using the
Gokhale, M.R., see Wei, J. 203 (1999) 302 multiple group-V source molecular beam
Goldys, E.M., see Paskova, T. 203 (1999) 1 epitaxy (MBE) system 203 (1999) 18
Gopalakrishna Naik, K., see Udayashankar, Kaiser, Th., see Schweizer, M. 203 (1999) 500
N.K. 203 (1999) 333 Kaji, K., see Sakai, Y. 203 (1999) 244
Gossenberger, H.F., see Deutsch, M. 203 (1999) 412 Kaneko, T., see Yumoto, H. 203 (1999) 136
Gotoh, Y., see Yumoto, H. 203 (1999) 136 Karakostas, Th., see Komninou, Ph. 203 (1999) 103
Grasza, K. and M. Pawlowska, Morphologi- Kawaguchi, T., K. Mizuuchi, T. Yoshino, M.
cal instabilities in CdTe crystal growth Imaeda, K. Yamamoto and T. Fukuda,
from the vapor phase 203 (1999) 371 Liquid-phase epitaxial growth of Zn-
doped LiNbO, thin films and optical
Griesche, J. and K. Jacobs, Reflection high-
energy electron diffraction (RHEED) oscil- damage resistance for second-harmonic
lations in phase-locked epitaxy of ZnSe 203 (1999) 45 generation 203 (1999) 173
Kikuchi, S., see Iwata, Y. 203 (1999) 125
Hall, E. and H. Kroemer, Surface morphology Kim, G., see Park, B.M. 203 (1999) 67
of GaSb grown on (1 1 1)B GaAs by mo- Klemenz, C. and H.J. Scheel, Growth and
lecular beam epitaxy 203 (1999) 297 properties of Nd,,,Ba,-.,Cu,;074,5
Hall, E.. H. Kroemer and L.A. Coldren, whiskers and needle-like crystals 203 (1999) 534
Improved composition control of digitally Kobayashi, H., see Iwata, Y. 203 (1999) 125
grown AIAsSb lattice-matched to InP 203 (1999) 447 Kodaira, K., see Higuchi, M. 203 (1999) 450
606 Author index
Komninou, Ph., J. Stoemenos, G. Nouet and Matsumoto, S., see Akane, T. 203 (1999) 80
Th. Karakostas, Gold films epitaxially Meekes, H., see Bogels, G. 203 (1999) 554
grown by diffusion at the 3C-SiC/Si inter- Miotkowska, S., see Miotkowski, I. 203 (1999) 51
face 203 (1999) 103 Miotkowski, I., R. Vogelgesang, H. Alawadhi,
Korakakis, D., see Blant, A.V. 203 (1999) 349 M.J. Seong, A.K. Ramdas, S. Miotkowska
Kozlov, V.M. and L.P. Bicelli, Influence of the and W. Paszkowicz, Lattice parameters
nature of metals on the formation of the and optical characterization of Cd, _,.Mg,Se
deposit’s polycrystalline structure during alloys grown by vertical gradient freezing
electrocrystallization 203 (1999) 255 technique 203 (1999) 51
Kribes, Y., see Blant, A.V. 203 (1999) 349 Mizuuchi, K., see Kawaguchi, T. 203 (19991)7 3
Kroemer, H., see Hall, E. 203 (1999) 297 Moffat, H.K., see Salinger, A.G. 203 (19995)1 6
Kroemer, H., see Hall, E. 203 (1999) 447 Mogi, I., see Tagami, M. 203 (19995)9 4
Krukowski, S. and J.C. Tedenac, Surface diffu- Monemar, B., see Paskova, T. 203 (1999) 1
sion contribution to dendrite sidebranch- Morato, S.P., see Santo, A.M.E. 203 (19991)5 6
ing during growth of 2D Kossel crystal Motokawa, M., see Tagami, M. 203 (19995)9 4
from the vapor 203 (1999) 269 Mukasa, K., see Iwata, Y. 203 (19991)2 5
Kumar, J., see Jeganathan, K. 203 (1999) 327 Mula, G., see Carbonell, L. 203 (1999) 61
Lachab, M., see Wang, T. 203 (1999) 443 Nair, M.T.S., see Garcia, V.M. 203 (1999) 113
Lan, C.W. and J.H. Chian, Effects of ampoule Nair, P.K., see Garcia, V.M. 203 (1999) 113
rotation on vertical zone-melting crystal Nakagawa, D., see Wang, T. 203 (1999) 443
growth: steady rotation versus accelerated
Nakajima, K., Thickness-composition dia-
crucible rotation technique (ACRT) 203 (1999) 286
grams of Stranski-Krastanov mode in the
Larkins, E.C., see Blant, A.V. 203 (1999) 349
GaPSb/GaP and InGaAs/GaAs systems 203 (1999) 376
LeCaptain, D.J. and K.A. Berglund, The ap- Nakanishi, H., K. Nakazato, K. Abe, S.
plicability of second harmonic generation Maeda and K. Terashima, Temperature
for in situ measurement of induction time dependence of the density of molten ger-
of selected crystallization systems 203 (1999) 564 manium and silicon measured by a newly
Li, A.Z., see Lin, C. 203 (1999) 511 developed Archimedian technique 203 (1999) 75
Li, J.B., see Xu, D.P. 203 (1999) 40 Nakazato, K., see Nakanishi, H. 203 (1999) 75
Li, S.F., see Xu, D.P. 203 (1999) 40 Naritsuka, S., see Yan, Z. 203 (1999) 25
Li, S.-Y. and J. Zhu, Al diffusion in GaN buffer Naritsuka, S. and T. Nishinaga, Liquid-phase
layer during the growth of GaN film 203 (1999) 473 epitaxy (LPE) microchannel epitaxy of InP
Li, W.-J., E.-W. Shi, W.-Z. Zhong and Z.-W. with high reproducibility achieved by
Yin, Growth mechanism and growth habit predeposition of In thin layer 203 (19994)5 9
of oxide crystals 203 (1999) 186 Nishinaga, T., see Yan, Z. 203 (1999) 25
Li Zhengdong, see Yang Shangfeng 203 (1999) 425 Nishinaga, T., see Naritsuka, S. 203 (19994)5 9
Lichtensteiger, M., see Schweizer, M. 203 (1999) 500 Nishiyama, K., see Yumoto, H. 203 (19991)3 6
Liebertz, J., see Becker, P. 203 (1999) 149 Nouet, G., see Komninou, Ph. 203 (19991)0 3
Lin, C. and A.Z. Li, The effect of strain on the Novikov, S.V., see Blant, A.V. 203 (19993)4 9
miscibility gap in Ga-In-Sb ternary alloy 203 (1999) 511
Lin, W., see Chang, J.R. 203 (1999) 481 O'Donnell, K.P., see Chinyama, K.G. 203 (1999) 362
Liu, S., R. Ma, R. Jiang and F. Luo, Synthesis Ohshita, Y. and K. Watanabe, Chemical reac-
and structure of hydrated neodymium car-
tions determining the step-coverage qual-
bonate 203 (1999) 454 ity in plasma-assisted chemical vapor
Liu, Y.C., G.S. Song, G.C. Yang and Y.H. deposition of titanium 203 (1999) 540
Zhou, Icosahedral phase growth in chill
Okumura, H., see Akane, T. 203 (1999) 80
cast TiggFe,Si, alloy 203 (1999) 131
Locmelis, S., see Patzke, G.R. 203 (1999) 141 Park, B.M., G.H. Seo and G. Kim, Effects of
Lui, P.Y., see Yoon, S.F. 203 (1999) 31 pulling rate fluctuation on the interstitial-
Luo, F., see Liu, S. 203 (1999) 454 vacancy boundary formation in CZ-Si
single crystal 203 (1999) 67
Ma, R., see Liu, S. 203 (1999) 454 Paskova, T., E.M. Goldys and B. Monemar,
Maeda, S., see Nakanishi, H. 203 (1999) 75 Hydride vapour-phase epitaxy growth and
Mao Bingwei, see Yang Shangfeng 203 (1999) 425 cathodoluminescence characterisation of
Matsukura, Y., see Yokoyama, M. 203 (1999) 464 thick GaN films 203 (1999) 1
Author index 607
Pastor, R.C., Crystal growth of metal fluorides Schweizer, M., A. Crdll, P. Dold, Th. Kaiser,
for CO, laser operation. II. Optimization M. Lichtensteiger and K.W. Benz,
of the reactive atmosphere process (RAP) Measurement of temperature fluctuations
choice 203 (1999) 421 and microscopic growth rates in a silicon
Paszkowicz, W., see Miotkowski, I. 203 (1999) 51 floating zone under microgravity 203 (19995)0 0
Patzke, G.R., S. Locmelis, R. Wartchow and Seierby, N., see Christoffersen, M.R. 203 (19992)3 4
M. Binnewies, Chemical transport phe- Seo, G.H., see Park, B.M. 203 (1999) 67
nomena in the ZnO-Ga,O, system 203 (1999) 141 Seong, M.J., see Miotkowski, I. 203 (1999) 51
Pawlowska, M., see Grasza, K. 203 (1999) 371 Serrano, M.D., see Bermidez, V. 203 (19991)7 9
Polak, W. and K. Sangwal, Study of the ge- Shadid, J.N., see Salinger, A.G. 203 (19995)1 6
ometry of KCI clusters nucleating from Shi, E.-W., see Li, W.-J. 203 (19991)8 6
vapour and in aqueous solutions 203 (1999) 434 Shiao, H.P., see Chang, J.R. 203 (19994)8 1
Prasad, V., see Chen, Q.-S. 203 (1999) 261 Shirahama, T., see Wang, T. 203 (19994)4 3
Song, G.S., see Liu, Y.C. 203 (19991)3 1
Ramdas, A.K., see Miotkowski, I. 203 (1999) 51
Sonoda, T., see Kadoiwa, K. 203 (1999) 18
Ratke, L., see Stocker, C. 203 (1999) 582
Stocker, C. and L. Ratke, A new ‘Jack-
Rebey, A., T. Boufaden and B. El Jani, In situ
son—Hunt’ model for monotectic com-
optical monitoring of the decomposition of
posite growth 203 (1999) 582
GaN thin films 203 (1999) 12
Stoemenos, J., see Komninou, Ph. 203 (1999) 103
Ribeiro, C.A., see de Castro, M.P.P. 203 (1999) 317
Stutzmann, M., see Vogg, G. 203 (1999) 570
Ricolleau, C., L. Audinet, M. Gandais, T.
Su Genbo, see Yang Shangfeng 203 (1999) 425
Gacoin and J.P. Boilot, 3D morphology of
Su, Y.K., see Chang, J.R. 203 (1999) 481
II-VI semiconductor nanocrystals grown
in inverted micelles 203 (1999) 486
Tagami, M., M. Hamai, I. Mogi, K. Watanabe
Rosenauer, A., see Chinyama, K.G. 203 (1999) 362
and M. Motokawa, Solidification of levi-
Sakai, S., see Wang, T. 203 (1999) 443 tating water in a gradient strong magnetic
field 203 (1999) 594
Sakai, Y., M. Imai, K. Kaji and M. Tsuji,
Tip-splitting crystal growth observed in Takei, H., see Tanaka, M. 203 (1999) 400
crystallization from thin films of poly(ethy- Tanaka, H., see Yokoyama, M. 203 (1999) 464
lene terephthalate) 203 (1999) 244 Tanaka, M., M. Hasegawa and H. Takei,
Sako, T., see Yumoto, H. 203 (1999) 136 Growth and characterization of delafos-
Salinger, A.G., J.N. Shadid, S.A. Hutchinson, site-type Pd(Co, - ,.Mn,)O, (x = 0.04, 0.11)
G.L. Hennigan, K.D. Devine and H.K. single crystals 203 (19994)0 0
Moffat, Analysis of gallium arsenide de- Tang Jing, see Yang Shangfeng 203 (19994)2 5
position in a horizontal chemical vapor Tatarenko, S., see Carbonell, L. 203 (1999) 61
deposition reactor using massively parallel Tedenac, J.C., see Krukowski, S. 203 (19992)6 9
computations 203 (1999) 516 Terashima, K., see Nakanishi, H. 203 (1999) 75
Sangwal, K., Kinetic effects of impurities on Togi, T., see Higuchi, M. 203 (19994)5 0
the growth of single crystals from solutions 203 (1999) 197 Tsuji, M., see Sakai, Y. 203 (19992)4 4
Sangwal, K., see Polak, W. 203 (1999) 434 Tubo, Y., see Akane, T. 203 (1999) 80
Sano, M., see Akane, T. 203 (1999) 80
Santo, A.M.E.,S.P. Morato and S.L. Baldochi, Udayashankar, N.K., K. Gopalakrishna Naik
Ni?* distribution in BaLiF,; crystals pre- and H.L. Bhat, The influence of temper-
pared by the zone-melting technique 203 (1999) 156 ature gradient and lowering speed on the
Scheel, H.J., see Klemenz, C. 203 (1999) 534 melt-solid interface shape of Ga,In, —,Sb
Schineller, B., see Schwambera, M. 203 (1999) 340 alloy crystals grown by vertical Bridgman
Schmitz, D., see Schwambera, M. 203 (1999) 340 technique 203 (1999) 333
Schoen, O., see Schwambera, M. 203 (1999) 340
Schwambera, M., O. Schoen, B. Schineller, D. Verhaegen, S.A.C., see Bégels, G. 203 (1999) 554
Schmitz and M. Heuken, Investigation of Vogelgesang, R., see Miotkowski, I. 203 (1999) 51
GalnN films and development of double- Vogg, G., M.S. Brandt, M. Stutzmann and M.
hetero (DH) structures for blue and green Albrecht, From CaSi, to siloxene: epitaxial
light emitters 203 (1999) 340 silicide and sheet polymer films on silicon 203 (1999) 570
Schwartz, A.M. and K.A. Berglund, The use of
Raman spectroscopy for in situ monitor- Wang, C.-W., Substrate misorientation effects
ing of lysozyme concentration during crys- on Zn,-,.Mg,Se layers grown on
tallization in a hanging drop 203 (1999) 599 GaAs(1 1 1) by molecular beam epitaxy 203 (1999) 355
608 Author index
Wang, T., M. Lachab, D. Nakagawa, T. Yeckel, A. F.P. Doty and J.J. Derby,
Shirahama and S. Sakai, Investigation of Effect of steady crucible rotation on
two-dimensional electron gas in AlGaN/ segregation in high-pressure vertical
GaN heterostructures grown by metalor- Bridgman growth of cadmium zinc
ganic chemical vapor deposition (MOCVD) 203 (1999) 443 telluride 203 (1999) 87
Wang, W. and W.R. Hu, Concentration distri- Yin, Z.-W., see Li, W.-J. 203 (1999) 186
bution in solution crystal growth: effect of Yokoyama, M., Y. Matsukura and H. Tanaka,
moving interface conditions 203 (1999) 227 Selective epitaxial growth of GaAs using
Wang, Y.T., see Xu, D.P. 203 (1999) 40 dimethylgalliumchloride by multi-wafer
Wartchow, R., see Patzke, G.R. 203 (1999) 141 low-pressure metal organic vapor phase
Watanabe, K., see Ohshita, Y. 203 (1999) 540 epitaxy (LP-MOVPE) 203 (1999) 464
Watanabe, K., see Tagami, M. 203 (1999) 594 Yoon, S.F., P.Y. Lui and H.Q. Zheng, Deep-
Wei, J., M.R. Gokhale and S.R. Forrest, Growth level transient spectroscopy characteriza-
of thallium containing III-V materials by tion of Ino. 4sGao.52P grown at different
gas-source molecular beam epitaxy 203 (1999) 302 V/III ratio using a valved phosphorus
Wells, J.-P.R., see Duffy, S. 203 (1999) 405 cracker cell in solid source molecular beam
Wright, A.C., Microstructure of zine selenide epitaxy 203 (1999) 31
single crystals grown by solid phase recrys- Yoshino, T., see Kawaguchi, T. 203 (1999) 173
tallisation 203 (1999) 309 Yumoto, H., T. Sako, Y. Gotoh, K. Nishiyama
Wu Jianmin, see Yang Shangfeng 203 (1999) 425 and T. Kaneko, Growth mechanism
Wu, R.H., see Xu, D.P. 203 (1999) 40 of vapor-liquid-solid (VLS) grown
indium tin oxide (ITO) whiskers along the
Xu, D.P., H. Yang, D.G. Zhao, J.B. Li, L.X.
substrate 203 (1999) 136
Zheng, Y.T. Wang, S.F. Li, L.H. Duan and
R.H. Wu, Scanning electron microscope
Zeng, H.C., Purification growth of orthor-
studies of cubic Al,Ga,_,N films grown
hombic molybdenum trioxide crystals
on GaAs(100) by metal organic vapor
from alkali-metal-containing Mo-sources 203 (1999) 547
phase epitaxy (MOVPE) 203 (1999) 40
Zhang Jiguo, see Zhang Shujun 203 (1999) 168
Xu Jun, see Dong Jun 203 (1999) 163
Zhang Shujun, Zhang’ Jiguo, Cheng
Yamamoto, K., see Kawaguchi, T. 203 (1999) 173 Zhenxiang, Zhou Guangyong, Han
Yamamoto, Y., see Kadoiwa, K. 203 (1999) 18 Jianru and Chen Huanchu, Studies on the
Yan, Z., 8. Naritsuka and T. Nishinaga, Inter- growth and defects of GdCa,O(BO;),
face supersaturation in microchannel epi- crystals 203 (19991)6 8
taxy of InP 203 (1999) 25 Zhao, D.G., see Xu, D.P. 203 (1999) 40
Yang, G.C., see Liu, Y.C. 203 (1999) 131 Zheng, H.Q., see Yoon, S.F. 203 (1999) 31
Yang, H., see Xu, D.P. 203 (1999) 40 Zheng, L.X., see Xu, D.P. 203 (1999) 40
Yang Shangfeng, Su Genbo, Tang Jing, Mao Zhong, W.-Z., see Li, W.-J. 203 (19991)8 6
Bingwei, Wu Jianmin and Li Zhengdong, Zhou Guangyong, see Zhang Shujun 203 (19991)6 8
Surface topography of rapidly grown Zhou, Y.H., see Liu, Y.C. 203 (19991)3 1
KH,PO, crystals with additives: ex situ Zhu, J., see Li, S.-Y. 203 (19994)7 3
investigation by atomic force microscopy 203 (1999) 425 Zunic, T.B., see Christoffersen, M.R. 203 (19992)3 4
sourna.or GRYSTAL
GROWTH
ELSEVIER Journal of Crystal Growth 203 (1999) 609-610
Subject index
Apparatus - of interface control 355
- for containerless growth 594 - of nucleation 412, 599
Computer simulation Lasers, see Device characterization
- of continuum transport 87 Lasers, crystals for
- of dendritic growth 269 - barium lithium fluoride 156
- of stability analysis 261 — yttrium aluminum garnet 163
- of vertical zone melting 286 Lysozyme 599
Constitutional supercooling
- of cadmium telluride 371
Melt growth technique
- of monotectic alloys 582
- by Bridgman-Stockbarger method
Convection 286, 500, 516, 582
- - of cadmium zinc telluride 87
- - of gallium indium antimonide 333
Dendritic growth - — of lithium yttrium fluoride 405
- of gadolinium calcium oxoborate 168 — by chill cast
Device characterization - — of titanium iron silicide quasicrystals 131
- diodes 103, 355 - by Czochralski method
- electronic materials 412 - - of germanium 75
- lasers 412 - — of lithium niobate 179
- nonlinear optics 149 - - of silicon 67
— quantum wells 362 - — of yttrium aluminum garnet 163
Diffusional control - by floating zone method
- of gallium nitride 473 - - of barium lithium fluoride 156
- of polymer crystallization 244 - - of silicon 500
Diodes, see Device characterization - by pulling down method
- - of rutile 450
Electronic materials, see Device characterization -a uniaxial solidification
Epitaxy, see Thin film growth - — of cadmium magnesium selenide 51
Etching - theory of
~ chemical 12. 179. 317 - silicon grown in defects 387
- photolithographic 317 - stability 261 .
~ Ghee 12 - - two-dimensional nucleation 168
Eutectic growth, of Microgravity, growth under
- gold 103 - of magnetic levitation 594
- of silicon 500
- of sodium chloride 227
Heat flow control, of
Morphological stability
— vertical zone melting 286
- of alpha-alumina 213
Hydrodynamics, see Convection
- of cadmium sulphide 486
-— of cadmium telluride 371
Kinetics - of clusters 434
- of dissolution 234 — of oxide crystals 186
- of growth 40, 61, 67, 125, 186, 197, 227, 244, 317, 599 - of polyethylene terephthalate 244
0022-0248/99/$-see front matter © 1999 Elsevier Science B.V. All rights reserved.
PII: S0022-0248(99)00228-6
610 Subject index
Nucleation Thin film growth, epitaxy
of cadmium sulphide 486 by chemical bath deposition
of electrodeposits 255 - of copper selenide 113
of potassium chloride 434 by liquid phase epitaxy
of potassium dihydrogen phosphide 564 - of aluminum gallium arsenide 327
Numbers - of indium phosphide 25, 459
Grashof 87 - of lithium niobate 173
Marangoni 261, 582 by metalorganic molecular beam epitaxy
Peclet 87, 582 - of indium gallium phosphide 317
Taylor 87, 286 by molecular beam epitaxy
- of aluminum arsenide antimonide 447
- of antimony telluride 125
Phase diagrams, of
- of bismuth telluride 125
~- bismuth borate 149
~ of cadmium telluride 61
—- growth modes 376
- of gallium antimonide 297
- of gallium nitride 349
Quantum wells, see Device characterization - of indium gallium arsenide 18
- of indium gallium phosphide 31
- of indium gallium thallium arsenide 302
Solid growth technique
~ of indium thallium phosphide 302
~ by recrystallization
- of silicon germanium carbon 80
- — of zinc selenide 309
- of zinc magnesium selenide 355
Solution growth
— of zinc selenide 45
- by electrodeposition
by reactive deposition epitaxy
- — of cadmium 255
- of calcium disilicide 570
~ - of copper 255
- of siloxene 570
- - of nickel 255
by vapor phase epitaxy
- by extractive crystallization
- through chemical vapor deposition
- — of silver bromide 554
- — of cadmium selenide 362
- — of silver chloride 554
- — of gallium nitride 1, 473
- by flux
- — of titanium silicide 540
- — of bismuth borate 149
- - of zinc selenide 362
- — of molybdenum trioxide 547
- through metalorganic chemical vapor deposition
- — of neodymium barium cuprate 534
- - of aluminum gallium nitride 40, 443
~- by hanging drop
- — of aluminum indium arsenide antimonide 481
- - of lysozyme 599
- — of gallium arsenide 464, 516
~ by hydrothermal method
of gallium nitride 12
- - of alpha-alumina 213
of indium gallium nitride 340
— by inverted micelles
theory of
~ — of cadmium sulphide 486
- growth modes 376
- by low temperature method
- strain induced miscibility 511
- - of hydrated neodymium carbonate 454
- — of potassium dihydrogen phosphate 197, 425 Vapor growth technique
- by metathetical reaction by chemical transport
- - of palladium cobalt cuprate 400 - of zine gallium oxide 141
— theory by evaporation and condensation
- - of growth habit 186 - of cadmium telluride 371
Stefan problem or moving boundary problem 87, 227
- of organic salt 412
Surface energy determination by reactive atmosphere process
- of triclinic calcium pyrophosphate dihydrate 234 ~ of metal fluorides 421
Surface structure, of theory
- aluminum gallium nitride 40 - of dendritic growth 269
- cadmium telluride 61, 371 Vapor-liquid-solid growth
- gallium nitride 349
of indium tin oxide 136
- ionic clusters 434
- s-k growth modes 376 Whiskers growth
- silicon germanium carbon 80 of indium tin oxide 136
— zinc selenide 45 of neodymium barium cuprate 534