Table Of ContentJournal of Crystal Growth 123 (1992) 619-623 ovene CRYSTAL
North-Holland GROWTH
Author index
Abstreiter, G., see Wegscheider 123 (1992) 75 Bubulac, L.O. and C.R. Viswanathan, Diffu-
Adibi, F., see Kimura 123 (19923)4 4 sion of As and Sb in HgCdTe 123 (19925)5 5
Agafonov, V., R. Ceolin, R. Moret, D. An- Bunkin, A.Yu., Capture of inclusions during
dré, A. Dworkin, H. Szwarc, C. Fabre, A. Czochralski growth of lead germanate
Rassat, J.M. Cense, A. Zahab and P. and gadolinium molybdate crystals 123 (19924)5 9
Bernier, Morphology of C,, decagonal
crystals grown from n-hexane 123 (19923)6 6
André, D., see Agafonov 123 (19923)6 6 Cahn, J.W., J.G. Dash and H. Fu, Theory of
Aoki, Y., S. Hayashi and H. Komatsu, Liq- ice premelting in monosized powders 123 (1992) 101
uidus- and eutectic-temperature mea- Caneau, C., see Kim 123 (1992) 69
surements of Al-rich alloys containing Cu Cense, J.M., see Agafonov 123 (19923)6 6
and Si in a magnetic field of 3.5 T 123 (19923)1 3 Ceolin, R., see Agafonov 123 (19923)6 6
Ashida, M., see Hayashi 123 (1992) 35 Chen, P.C., C.Y. Tai and $.M. Shih, Control
Astier, J.P., see Boistelle 123 (1992) 109 of crystal habit and particle morphology
of calcium sulfite hemihydrate crystals 123 (19922)7 7
Bala, M., see Singh 123 (19926)0 1 Cheng, C.S., see Tai 123 (19922)3 6
Balk, P., see Kohl 123 (1992) 174 Choi, G.H., see Suk 123(1992) 5
Barbusse, D., see Lazzari 123 (19924)6 5 Colas, E., see Kim 123 (1992) 69
Bauer, S., see Kuhn 123 (19926)0 5 Coriell, S.R., see Singh 123 (19922)2 1
Bennema, P., L.J.P. Vogels and S. de Jong, Coriell, S.R., see Singh 123 (19922)2 7
Morphology of 8 phase monoacid tria- Cornet, A., see Gonzalez 123 (19923)8 5
cylglycerol crystals: theory and observa- Cullis, A.G., D.J. Robbins, A.J. Pidduck and
tions 123 (1992) 141 P.W. Smith, The characteristics of
Bernier, P., see Agafonov 123 (19923)6 6 Strain-modulated surface undulations
Bhalla, A.S., see Yamamoto 123 (19924)2 3 formed upon epitaxial S, _,.Ge, layers on
Bhat, R., see Kim 123 (1992) 69 Si 123 (19923)3 3
Biber, C.R.. CA. Wang and S. Motakef,
Flow regime map and deposition rate
uniformity in vertical rotating-disk Dai, Ting-Arn, see Lin 123 (19924)5 1
OMVPE reactors 123 (19925)4 5 Dash, J.G., see Cahn 123 (19921)0 1
Biefeld, R.M., see Schneider 123 (19924)8 7 Davey, RJ., see Harding 123 (19923)7 3
Billia, B., H. Jamgotchian and R. Trivedi, De Jong, S., see Bennema 123 (19921)4 1
Improved analysis of tip undercooling in De Keijser, M., see Dormans 123 (19925)3 7
cellular solidification of a binary alloy 123 (19923)9 9 Desseaux, V., see Boistelle 123 (1992) 109
Bobrobnikova, 1.A., L.G. Lavrent’eva, M.P Dondl, W., see Wegscheider 123 (1992) 75
Rusaikin and M.D. Vilisova, Doping and Dormans, G.J.M., PJ. van Veldhoven and
impurity-—vacancy complex formation M. de Keijser, Composition-controlled
during vapour-phase epitaxy of gallium growth of PbTiO, on SrTiO, by organo-
arsenide 123 (19925)2 9 metallic chemical vapour deposition 123 (19925)3 7
Boistelle, R., J.P. Astier, G. Marchis- Dou, Shue-xing, see Zhang 123 (19922)5 5
Mouren, V. Desseaux and R. Haser, Sol- Dubs, C., K. Fischer and P. Gérnert, Liquid
ubility, phase transition, kinetic ripening phase epitaxy of YBa,Cu,0,_, on
and growth rates of porcine pancreatic NdGaO, and LaGaO, substrates 123 (19926)1 1
a-amylase isoenzymes 123 (1992) 109 Diimichen, U., see Kuhn 123 (19926)0 5
Brauers, A., see Kaul 123 (1992) 411 Duva, J.M., see Seidel-Salinas 123 (19925)7 5
Briones, F., see Gonzalez 123 (19923)8 5 Duval, W.M.B., see Singh 123 (19922)2 1
Brokman, A., see Vilenkin 123 (19922)6 1 Duval, W.M.B., see Singh 123 (19922)2 7
Bryan, R.P., see Schneider 123 (19924)8 7 Dworkin, A., see Agafonov 123 (19923)6 6
620 Author index
Ehinger, M., M. Wenzel, A. Waag and G Higuchi, M. and K. Kodaira, Effect of ZrO,
Landwehr, Scanning tunneling micro- addition on FZ growth of rutile single
scope investigation of CdTe substrate crystals 123 (1992) 495
surfaces for molecular beam epitaxy 123 (1992) 42 Ho, Wen-Jeng, see Lin 123 (19924)5 1
Hopkins, R.H., see Singh 123 (1992) 221
Hopkins, R.H., see Singh 123 (1992) 227
Fabisiak, K., see Marciniak 123 (1992) 587
Huang, Y.C., see Tai 123 (1992) 236
Fabre, C., see Agafonov 123 (1992) 366
Hunt, J.D., see Lu 123 (1992) 17
Fischer, K., see Dubs 123 (19926)1 1
Fivash, M.J., see Samudzi 123 (1992) 47
Fourcade, R., see Lazzari 123 (1992) 465 Ikeda, H., see Koukitu 123 (1992) 95
Fu, H., see Cahn 123 (1992) 101 Ikeda, H., Y. Nishiyama, A. Koukitu, H
Seki and K. Kuroiwa, Vapor phase epi-
taxy of InGaAsP by the chloride single
Gatazka, R.R., see Grasza 123 (1992) 519
flat temperature zone method 123 (19922)1 3
Gebhardt, W., see Kuhn 123 (19926)0 5
Ikuno, H., see Hayashi 123 (1992) 35
Geertman, R.M., see Van der Heijden 123 (1992) 321
Inoue, T., S. Hayashi, S. Miyashita, M
Ghez, R. and R. Madar, Crystal growth as a
Shimizu, Y. Nishimura and H. Komatsu,
problem in chemisorption 123 (1992) 317
Conversion of superconducting Bi-system
Glicksman, M.E., see Singh 123 (19922)2 1
single crystals from 2212 to 2223 by the
Glicksman, M.E., see Singh 123 (19922)2 7
annealing method 123 (19926)1 5
Gonzalez, L., see Gonzalez 123 (1992) 385
Ishijima, H., see Katsumata 123 (1992) 597
Gonzalez, Y., L. Gonzalez, F. Briones, A.
Ishikawa, M., see Nishikawa 123 (1992) 181
Vila, A. Cornet and J.R. Morante, Initial
Ishizuka, Y. and T. Miura, Growth mecha-
stage of epitaxial growth at low tempera-
nism for (11m) orientations in Bi-—Sr
ture of GaAs and AIAs on Si by atomic
Ca—Cu-—O thin films 123 (1992) 357
layer molecular beam epitaxy (ALMBE)
Iwanov, D. and D. Nenow, Spontaneous re-
and MBE 123 (1992) 385
alization of the equilibrium form of
G6érnert, P., see Dubs 123 (19926)1 1
adamantane crystals 123 (1992) 195
Goswani, D.P., see Singh 123 (19926)0 1
Iwanov, D. and D. Nenow, The appearance
Gottlieb, M., see Singh 123 (1992) 221
of molecular roughness on the {111} face
Gottlieb, M., see Singh 123 (1992) 227
of adamantane 123 (1992) 436
Grasza, K., U. Zuzga-Grasza, A. Jedrzejc-
zak, R.R. Gatazka, J. Majewski, A. Szad-
kowski and E. Grodzicka, A novel method Jamgotchian, H., see Billia 123 (19923)9 9
of crystal growth by physical vapour Jedrsejczak, A., see Grasza 123 (19925)1 9
transport and its application to CdTe 123 (19925)1 9 Jiang, Min-hua, see Zhang 123 (1992) 255
Greene, J.E., see Kimura 123 (19923)4 4 Jin, Weiqing and K. Tsukamoto, Anisotropic
Grodzicka, E., see Grasza 123 (19925)1 9 growth of LiNbO, crystal as revealed by
Grunberg, P., see Lazzari 123 (19924)6 5 high temperature in situ observation 123 (1992) 327
Johansen, T.H., The weight gain signal in
LEC crystal growth 123 (1992) 188
Haga, N., see Nagata 123 (1992) 1
Jones, E.D., see Schneider 123 (19924)8 7
Harding, M.M., R.J. Rule, R.J. Oldman and
Jones, S.H., see Seidel-Salinas 123 (1992) 575
RJ. Davey, Growth rate dispersion in
Joullié, A., see Lazzari 123 (19924)6 5
small crystals and its relation to mosaic
spread 123 (19923)7 3
Harris, Jr., J.S., see Kim 123 (19924)3 9 Kajikawa, Y., see Sugiyama 123 (19923)9 3
Haser, R., see Boistelle 123 (1992) 109 Kalra, M.L., see Singh 123 (19926)0 1
Hatakoshi, G., see Nishikawa 123 (1992) 181 Katsumata, T., H. Ishijima, T. Sugano, M
Hayashi, S., H. Ikuno, H. Yanagi and M. Yamagishi and K. Takahashi, Prepara-
Ashida, Epitaxial growth and molecular tion of starting materials of B-BaB,O, by
orientation of tetra(4-pyridyl)porphyrin zone melting 123 (19925)9 7
thin film vacuum-evaporated on KCl 123 (1992) 35 Kaul, P., A. Schiitze, D. Kohl, A. Brauers
Hayashi, S., see Aoki 123 (19923)1 3 and M. Weyers, Surface chemistry of new
Hayashi, S., see Inoue 123 (19926)1 5 As precursors for MOVPE and MOMBE:
Henningsen, T., see Singh 123 (19922)2 1 phenylarsine and tertiarybutylarsine on
Henningsen, T., see Singh 123 (19922)2 7 GaAs(100) 123 (19924)1 1
Hicks, R.F., see Liu 123 (19925)0 0 Kayser, O., see Kohl 123 (1992) 174
Author index
Kim, Moo-Sung, C. Caneau, E. Colas and R Liu, B., R.F. Hicks and J.J. Zinck, Chemistry
Bhat, Selective area growth of InGaAsP of photo-assisted organometallic vapor-
by OMVPE 123 (1992) 69 phase epitaxy of cadmium telluride 123 (1992) 500
Kim, $.D. and J.S. Harris, Jr., Stacking fault Lu, $.Z. and J.D. Hunt, A numerical analy-
stability in GaAs/Si hetero-epitaxial sis of dendritic and cellular array growth
growth 123 (19924)3 9 the spacing adjustment mechanisms 123 (1992) 17
Kimura, H., Il. Petrov, F. Adibi and J.E
Greene, Growth and microstructure of Madar, R., see Ghez 123 (1992) 317
epitaxial 45°-rotated bec W layers on Majewski, J., see Grasza 123 (19925)1 9
NaCl-structure MgO(001) substrates and Marchis-Mourin, G., see Boistelle 123 (1992) 109
TiN(001) buffer layers 123 (1992) 344 Marciniak, W., K. Fabisiak, S. Orzeszko and
Kimura, S., see Tokizaki 123 (1992) 121 F. Rozploch, Observation of twinning in
Ko, E.1., see Snyder 123 (1992) 163 diamond CVD films 123 (19925)8 7
Kodaira, K., see Higuchi 123 (1992) 495 Markgraf, S.A., see Yamamoto 123 (19924)2 3
Kohl, A., D. Marx, M. Weyers, O. Kayser Marx, D., see Kohl 123 (19921)7 4
and P. Balk, Localized deposition of In Mazelsky, R., see Singh 123 (19922)2 1
and Ga in MOMBE 123 (1992) 174 Mazelsky, R., see Singh 123 (19922)2 7
Kohl, D., see Kaul 123 (19924)1 1 Menczigar, U., see Wegscheider 123 (1992) 75
Koinuma, H.., see Nagata 123 (1992) 1 Min, E., see Nagata 123 (1992) 1
Kokubun, Y , see Nishikawa 123 (1992) 181 Mitwalsky, A., see Thoma 123 (19922)8 7
Kokubun, Y , see Nishiwaka 123 (1992) 326 Miura, T.., see Ishizuka 123 (19923)5 7
Komatsu, H., see Aoki 123 (1992) 313 Miyashita, S., see Inoue 123 (19926)1 5
Komatsu, H., see Inoue 123 (19926)1 5 Miyazawa, S., see Sasaura 123 (19921)2 6
Koukitu, A., T. Miyazawa, H. Ikeda and H Miyazawa, T., see Koukitu 123 (1992) 95
Seki, Atmospheric pressure atomic layer Moon, I.H., see Suk 123 (1992) §
epitaxy of ZnS using Zn and H,S 123 (1992) 95 Morante, J.R., see Gonzalez 123 (19923)8 5
Koukitu, A., see Ikeda 123 (19922)1 3 Moret, R.., see Agafonov 123 (19923)6 6
Krasnov, A.N., Yu.F. Vaksman and Yu.N Mori, H., see Takagishi 123 (19922)0 3
Purtov, p-Type conductivity in ZnSe 123 (1992) 594 Motakef, S., see Biber 123 (19925)4 5
Krost, A., see Kuhn 123 (1992) 605
Kuhn, W., A. Naumov, H. Stanzi, S. Bauer, Nagata, H., M. Yoshimoto, H. Koinuma, E
K. Wolf, H.P. Wagner, W. Gebhardt, Min and N. Haga, Type-B epitaxial
U.W. Pohl, A. Krost, W. Richter, U growth of CeO, thin film on Si{111) sub-
Diimichen and K.H. Thiele, Low temper- strate 123 (1992) 1
ature MOVPE growth of ZnSe with Nancollas, G.H., see Zhang 123 (1992) 59
ditertiarybutylselenide 123 (19926)0 5 Naumov, A., see Kuhn 123 (1992) 605
Kuroiwa, K., see Ikeda 123 (1992) 213 Nenow, D., see Iwanov 123 (1992) 195
Nenow, D., see Iwanov 123 (1992) 436
Nishikawa, Y., M. Suzuki, M. Ishikawa, Y
Kokubun and G. Hatakoshi, Effects of
Lambert, B., see Lazzari 123 (19924)6 5 residual impurities on Zn electrical activ-
Landwehr, G., see Ehinger 123 (1992) 42 ity in Zn-doped InGaAlIP grown by met-
Lavrent’eva, L.G., see Bobrobnikova 123 (19925)2 9 alorganic chemical vapor deposition 123 (1992) 181
Lazzari, J.L., J.L. Leclercq, P. Grunberg, A Nishikawa, Y., H Sugawara and Y
Joullié, B. Lambert, D. Barbusse and R Kokubun, Anomalous Mg incorporation
Fourcade, Liquid phase epitaxial growth behavior in InGaAIP grown by metalor-
of AlGaAsSb on GaSb 123 (19924)6 5 ganic chemical vapor deposition (E) 123 (19923)2 6
Leclercq, J.L., see Lazzari 123 (19924)6 5 Nishimura, Y., see Inoue 123 (19926)1 5
Lee, Gwo-Yue, see Lin 123 (19924)5 1 Nishiyama, Y., see Ikeda 123 (19922)1 3
Leister, H.-J. and M. Perié, Numerical simu-
lation of a 3D Czochralski-melt flow by a Olajos, J., see Wegscheider 123 (1992) 75
finite volume multigrid-algorithm 123 (1992) 567 Olbright, G.R., see Schneider 123 (19924)8 7
Lin, Wei, Yuan-Kuang Tu, Ting-Arn Dai, Oldman, R.J., see Harding 123 (1992) 373
Wen-Jeng Ho, Gwo-Yue Lee and Hung- Oppolzer, H., see Thoma 123 (1992) 287
Pin Shiao, The In,Ga,_,As,P,_, (0.53 Orzeszko, S., see Marciniak 123 (1992) 587
<x <1, 0<y<1) compound semicon-
ductor for LD structures by organometal- Parthier, L., see Utke 123 (19922)6 9
lic vapor-phase epitaxy 123 (19924)5 1 Peri¢é, M., see Leister 123 (19925)6 7
622 Author index
Petrov, I., see Kimura 123 (19923)4 4 Singh, Y., D.P. Goswami, M. Bala and M.L.
Pidduck, A.J., see Cullis 123 (19923)3 3 Kalra, Large needle-shaped highly con-
Pogadaev, V.G., see Yakusheva 123 (19924)7 9 ducting organic charge transfer com-
Pohl, U.W., see Kuhn 123 (19926)0 5 plexes with asymmetric donor molecules 123 (1992) 601
Purtov, Yu.N., see Krasnov 123 (19925)9 4 Smith, P.W., see Cullis 123 (1992) 333
Snyder, D.W., PJ. Sides and E.I. Ko, On the
rate and uniformity of CdTe deposition
Rassat, A., see Agafonov 123 (19923)6 6 in an impinging jet reactor: experimental
Richter, W., see Kuhn 123 (19926)0 5 results 123 (1992) 163
Riecheri, H., see Thoma 123 (19922)8 7 Stanzl, H., see Kuhn 123 (19926)0 5
Riesz, F., The analogy between a coherently B. Stépanek and V. Sest4k’ov4, Indium and
strained epilayer on a vicinal substrate nitrogen doping of GaSb single crystals 123 (1992) 306
and a low-angle grain boundary 123 (19923)0 9 Sugano, T., see Katsumata 123 (1992) 597
Robbins, D.J., see Cullis 123 (19923)3 3 Sugawara, H., see Nishikawa 123 (1992) 326
Rodriguez-Hornedo, N., see Zipp 123 (19922)4 7 Sugiyama, N. and Y. Kajikawa, Mechanism
Rosenberg, J.M., see Samudzi 123 (1992) 47 of arsenic incorporation growth of gal-
Rozploch, F., see Marciniak 123 (19925)8 7 lium arsenide on gallium-covered sur-
Rule, R.J., see Harding 123 (19923)7 3 faces 123 (19923)9 3
Rusaikin, M.P., see Bobrobnikova 123 (19925)2 9 Suk, M.J., G.H. Choi and I.H. Moon, For-
mation of halo in Sb-InSb and Sn-Bi
eutectic alloy systems 123 (1992) 5
Samudzi, C.T., M.J. Fivash and J.M. Rosen-
Suzuki, M., see Nishikawa 123 (1992) 181
berg, Cluster analysis of the Biological
Szadkowski, A., see Grasza 123 (19925)1 9
Macromolecule Crystallization Database 123 (1992) 47
Szwarc, H., see Agafonov 123 (19923)6 6
Santoro, G.J., see Singh 123 (19922)2 1
Santoro, G.J., see Singh 123 (19922)2 7 Tai, C.Y., C.S. Cheng and Y.C. Huang, In-
Sasaura, M. and S. Miyazawa, Single crystal terpretation of crystal growth rate data
growth of PrGaO, 123 (1992) 126 using a modified two-step model 123 (19922)3 6
Schenk, M., see Utke 123 (19922)6 9 Tai, C.Y., see Chen 123 (19922)7 7
Schneider, Jr., R.P., R.P. Bryan, E.D. Jones, Takagishi, S., H. Yao and H. Mori, Surface
R.M. Biefeld and G.R. Olbright, Tri- defects of GaAs epitaxial layers grown by
methylamine alane for MOVPE of Al- low-pressure OMVPE 123 (1992) 203
GaAs and vertical-cavity surface-emitting Takahashi, K., see Katsumata 123 (1992) 597
laser structures 123 (19924)8 7 Tang, D.Y., W.R. Zeng and Q.L. Zhao, A
Schiitze, A., see Kaul 123 (19924)1 1 study on growth of B-BaB,O, crystals 123 (1992) 445
Seidel-Salinas, L.K., S.H. Jones and J.M. Tao, Xu-tang, see Zhang 123 (19922)5 5
Duva, A semi-empirical model for the Tappura, K., Incorporation of group V ele-
complete orientation dependence of the ments in gas-source molecular beam epi-
growth rate for vapor phase epitaxy: taxy of Ga,In,_,As,P,_, with x = 0.15
chloride VPE of GaAs 123 (19925)7 5 and y = 0.33 y 123 (19921)3 3
Seki, H., see Koukitu 123 (1992) 95 Terashima, K., see Tokizaki 123 (19921)2 1
Seki, H., see Ikeda 123 (19922)1 3 Thiele, K.H., see Kuhn 123 (19926)0 5
Sestak’ova, V., see Stépanek 123 (19923)0 6 Thoma, S., H. Riechert, A. Mitwalsky and
Shao, Zong-shu, see Zhang 123 (19922)5 5 H. Oppolzer, Determination of composi-
Shiao, Huang-Pin, see Lin 123 (1992) 451 tion profile and atomic-scale roughness
Shih, S.M., see Chen 123 (19922)7 7 of GaAs/AIGaAs interfaces by high-res-
Shimizu, M., see Inoue 123 (19926)1 5 olution transmission electron microscopy 123 (1992) 287
Sides, P.J., see Snyder 123 (1992) 163 Tokizaki, E., K. Terashima and S. Kimura,
Singh, N.B., M. Gottlieb, T. Henningsen, Variations in the physical properties of
R.H. Hopkins, R. Mazelsky, M.E. Glicks- molten lithium niobate caused by doping
man, S.R. Coriell, GJ. Santoro and with magnesium oxide 123 (1992) 121
W.M.B. Duval, Growth and characteriza- Trivedi, R., see Billia 123 (1992) 399
tion of lead bromide crystals Tsukamoto, K., see Jin 123 (1992) 327
Singh, N.B., M. Gottlieb, T. Henningsen, Tu, Yuan-Kuang, see Lin 123 (1992) 451
R.H. Hopkins, R. Mazelsky, M.E. Glicks-
man, S.R. Coriell, W.M.B. Duval and Utke, L, L. Parthier and M. Schenk, The
G.J. Santoro, Effect of growth conditions influence of interdiffusion on the lattice
on the quality of lead bromide crystals 123 (1992) 227 misfit of epitaxial structures 123 (1992) 269
Author index
Vaksman, Yu.F., see Krasnov 123 (1992) 594 liquid phase epitaxy of GaAs from bis-
Van der Heijden, A.E.D.M. and R.M muth-—gallium melts 123 (1992) 479
Geertman, Etch pits on caprolactam 123 (19923)2 1 Yamagishi, M., see Katsumata 123 (19925)9 7
Van Veldhoven, P.J., see Dormans 123 (1992) 537 Yamamoto, J.K., S.A. Markgraf and A.S
Vila, A., see Gonzalez 123 (19923)8 5 Bhalla, Sr,Ba,_,Nb,O, single crystal
Vilenkin, AJ. and A. Brokman, Geometric fibers: dependence of crystal quality on
model of crystal growth between rigid growth parameters 123 (19924)2 3
walls. I. Kinetical faceting by geometric Yanagi, H., see Hayashi 123 (1992) 35
constraints 123 (1992) 261 Yao, H., see Takagishi 123 (1992) 203
Vilisova, M.D., see Bobrobnikova 123 (19925)2 9 Yoshimoto, M., see Nagata 123 (1992) 1
Viswanathan, C.R., see Bubulac 123 (19925)5 5 Yuan, Duo-rong, see Zhang 123 (1992) 255
Vogels, L.J.P., see Bennema 123 (1992) 141
Waag, A., see Ehinger 123 (1992) 42 Zahab, A., see Agafonov 123 (19923)6 6
Wagner, H.P., see Kuhn 123 (19926)0 5 Zeng, W.R., see Tang 123 (19924)4 5
Wang, C.A., see Biber 123 (19925)4 5 Zhang, J. and G.H. Nancollas, Dissolution
Wegscheider, W., J. Olajos, U. Menczigar, deceleration of calcium phosphate crys-
W. Dondl and G. Abstreiter, Fabrication tals at constant undersaturation 123 (1992) 59
and properties of epitaxially stabilized Zhang, Nan, Duo-rong Yuan, Xu-tang Tao,
Ge /a-Sn heterostructures on Ge(001) 123 (1992) 75 Zong-shu Shao, Shue-xing Dou, Min-hua
Wenzel, M., see Ehinger 123 (1992) 42 Jiang and Dong Xu, New nonlinear opti-
Weyers, M., see Kohl 123 (1992) 174 cal crystal 3-methoxy-4-hydroxy-benzal-
Weyers, M., see Kaul 123 (19924)1 1 dehyde and its phase-matched properties 123 (19922)5 5
Wolf, K., see Kuhn 123 (19926)0 5 Zhao, Q.L., see Tang 123 (19924)4 5
Zinck, J.J., see Liu 123 (19925)0 0
Xu, Dong, see Zhang 123 (19922)5 5 Zipp, G.L. and N. Rodriguez-Hornedo,
Phenytoin crystal growth rates in the
Yakusheva, N.A. and V.G. Pogadaev, Am- presence of phosphate and chloride ions 123 (19922)4 7
photeric behaviour of germanium during Zuzga-Grasza, U., see Grasza 123 (19925)1 9
Journal of Crystal Growth 123 (1992) 624-626 journo CRYSTAL
North-Holland GROWTH
Subject index
Adamantane 195, 436 Characterization methods
Alloys — by absorption spectroscopy 519
- aluminum 313 — by acoustic attenuation 221
— indium antimony 5 - by atomic force microscopy 333
— tin—bismuth 5 by Auger electron spectroscopy 75, 203, 385
Aluminum by differential thermal analysis 126, 221, 615
— arsenide 385 by electrical methods 181, 213, 306, 344, 357, 451,
— gallium arsenide 487 519, 529, 555, 594, 601, 611
— gallium arsenide antimonide 465 by electron diffraction 1, 587
— organic 487 by electron microscopy 35, 69, 174, 195, 203, 2
Ammonium 327, 333, 344, 357, 366, 385, 399, 439, 451,
— dihydrogen phosphate 373 605, 611
Apparatus by infrared spectroscopy 277
for solution growth by low energy electron diffraction 75
— by electrocrystallization — by mass spectrometry 411
— — of organic charge transfer complexes 601 - by optical microscopy 5, 126, 203, 255, 306, 321,
— by flux method 451, 459, 495, 611
- — of barium borate 445 by optical properties 227
for thin film growth by particle size distribution analysis 247, 373
— by vapor phase epitaxy by photoluminescence 213, 287, 451, 465, 487, 594, 605
— — through metalorganic chemical vapor deposition by Raman spectroscopy 75, 605
— — — of gallium arsenide 203
— — — of lead titanate 537 393
for miscellaneous purposes by Rutherford backscattering 537
— — cadmium telluride deposition (in impinging jet reactor) by scanning tunneling microscopy 42
163 by second harmonic generation 255
— — measuring temperature under magnetic field 313 by secondary ion mass spectrometry 181, 555
Arsenic by X-ray methods 1, 75, 95, 126, 213, 255, 269, 277, 344,
— organic 357, 366, 373, 445, 451, 465, 519, 529, 537, 605, 611, 615
- by X-ray photoelectron spectroscopy 411
Barium Clusters
— borate 445, 597 — analysis of 47
Benzaldehyde, 3-methoxy-4-hydroxy 255 Constitutional supercooling 459
Bismuth Convection 121, 227, 423, 545, 567
— strontium calcium cuprate 357, 615 Crystallization database
Buckminster fullerene — of biological macromolecules 47
~ Ceo 336
Burton—Cabrera—Frank theory 236 Database
- biological macromolecule crystallization 47
Cadmium Dendritic growth 17
— mercury telluride 269, 555 Device characterization
— organic 500 — laser diodes 451, 487
— telluride 42, 163, 500, 519 ~- p-—n junction 555
Calcium — quantum wells /size effects 213, 287, 451, 487
— phosphates 59 Diamond 587
— sulphite hemihydrate 277 Diffusional control 269
Cellular growth 17 — of mercury cadmium telluride 555
- of succinonitrile 399 - of succinonitrile 399
Cerium — of titanium dioxide 495
— dioxide 1 Dopants 121, 181, 306, 459, 479, 495, 555, 594
Subject index
Epitaxy, see Thin film growth - of gallium arsenide 188
Etching of lead germanate 459
chemical 42, 203, 269, 306, 321, 423 of lithium niobate 121
Eutectic growth of praseodymium gallate 126
of alloys 5 numerical simulation of 567
theory of 188
Fullerenes 366 by floating zone method
of titanium dioxide 495
by laser heated pedestal growth
Gadolinium of strontium barium niobate 423
molybdate 459
by uniaxial solidification
Gallium 174 of succinonitrile 399
antimonide 306
by zone melting
arsenide 188, 203, 287, 385, 393, 411, 439, 479, 529, 575
of barium borate 597
indium arsenide phosphide 133 theory of 101
organic 174, 451 Mercury
Germanium 75
cadmium telluride 269, 555
Glutamic acid 236 Morphological stability
of gadolinium molybdate 459
Heterojunction 1, 75 of lead germanate 459
Hydrodynamics, see Convection of lithium niobate 327
of silicon—germanium 333
Ice 101
Indium 174
Nonlinear optics, crystals for 255
antimonide 5
in barium borate 445
gallium aluminum phosphide 181
Nucleation 519, 587
gallium arsenide phosphide 69, 213, 451
Numbers
organic 174, 451
Grashof 545
Marangoni 423
Kinetics Peclet 545
of doping 529 Reynolds 545
of growth 5, 95, 109, 163, 174, 213, 236, 247, 261, 317, 357,
373, 393, 411, 465, 500, 537, 575, 605
of interface control 59, 261, 357 Organic charge transfer complexes 601
of nucleation 69, 385
Periodic bond chain theory 141, 321
Laser diodes, see Device characterization .
Lead Phase diagr rams 313
Ae b de 221. 227 of aluminum -gallium—antimony 465e
a cae ae of succinonitrile—acetone 399
zermanate 459
. Phenomenological theory
titanate 537
7 of cellular growth 399
Light emitting diode, see Device characterization
of dendritic growth 17
Lithium
Phenytoin 247
niobate 121, 327
Porphyrin
derivative 35
Magnesium Praseodymium
sulphate 236 gallate 126
Mathematical model Precursor
of dendritic growth 17 for aluminum gallium arsenide 487
Melt growth technique for gallium arsenide 411
by Bridgman—Stockbarger method Proteins 109
of aluminum alloy 313 Purification of materials
of lead bromide 221, 227 of barium borate 597
by Czochralski method
of gadolinium molybdate 459
of gallium antimonide 306 Quantum wells /size effects, see Device characterization
626 Subject index
Rutile 495 by liquid phase epitaxy
—- of aluminum gallium arsenide antimonide 465
Segregation ~ of gallium arsenide 479
— of tin in germanium 75 — of mercury cadmium telluride 269
Silicon - of yttrium barium cuprate 611
— germanium 333 by magnetron sputtering
Sodium — of tungsten 344
- chlorate 373 - by molecular beam epitaxy
Solid growth technique ~ of aluminum arsenide 385
— by recrystallization — of bismuth strontium calcium cuprate 357
- — of bismuth strontium calcium cuprate 615 - of cerium dioxide 1
Solution growth technique of gallium arsenide 287, 385, 393
— by electrocrystallization — of gallium indium arsenide phosphide 133
- — of organic charge transfer complexes 601 by vapor phase epitaxy
— by flux method — through chemical vapor deposition
— — of barium borate 445 - of diamond 587
— of yttrium barium cuprate 611 - of gallium arsenide 529, 575
by low temperature method — of indium gallium arsenide phosphide 213
of ammonium dihydroxy phosphate 373 — of silicon—germanium 333
~ of buckminster fullerenes 366 through evaporation and condensation
of calcium phosphates 59 - of porphyrin derivative 35
of calcium sulphite hemihydrate 277 - through metalorganic chemical vapor deposition
of organic crystals 141, 255 - of aluminum gallium arsenide 487
of proteins 109 ~ of cadmium telluride 163, 500
- — of sodium chlorate 373 — of gallium arsenide 203
— — of sucrose 373 - — of indium gallium aluminum phosphide 181
Statistical mechanics, molecular theory of indium gallium arsenide phosphide 69, 451
- of adamantane 436 of lead titanate 537
- of B phase monoacid triacylglycerol 141 of mercury cadmium telluride 55
Stefan problem or moving boundary problem of zinc selenide 605
~— of succinonitrile—acetone 399 theory of 545
— bismuth alloy 5
Strontium — nitride 344
- barium niobate 423 Titanium
Succinonitrile 399 ~ dioxide 495
Sucrose 373 Triacylglycerol, 8 phase monoacid 141
Superconducting materials, high T, Tungsten 344
— bulk Twinning
- — of BiSCCO 615 - of buckminster fullerene 366
— film - of diamond 587
- — of BiSCCO 357
- — of YBCO 611 Vapor growth technique
Supercooling, supersaturation 141, 327, 399, 459 — by chemical transport
Surface processes 317, 411 - — of cadmium telluride 519
Surface structure 42, 141, 174, 195, 436 — by evaporation and condensation
- — of adamantane 195
Tellurium
— organic 500 Zinc
Thin film growth, epitaxy ~— organic 605
— by atomic layer epitaxy - selenide 594, 605
— — of zinc sulphide 95 - sulphide 95
