Table Of ContentJournal of Crystal Growth 112 (1991) 841-846
North-Holland
Author index
Abell, J.S., see Gencer 112 (19913)3 7 Benson, S.W., see Francis 112 (19914)7 4
Agostinelli, E., see Leccabue 112 (19916)4 4 Bierlein, J.D., see Cheng 112 (19913)0 9
Allard, L.F., see Bamberger 112 (1991) 47 Bilgram, J.H., see Steininger 112 (1991) 201
Allerman, A.A., P.A. Barnes and S.D. Walck, Bindal, M.M., S.K. Singhal, B.P. Singh, R.K.
Uniform radial flow epitaxy for thin layer Nayar, R. Chopra and A. Dhar, Synthesis
heterostructures 112 (19915)8 3 of cubic boron nitride using magnesium
Andrieu, S. and F. Arnaud d’Avitaya, Ga as the catalyst 112 (1991) 386
adsorption on Si (111) analysed by Blaha, J., see McCrary 112 (1991) 39
RHEED and in situ ellipsometry 112 (19911)4 6 Boland, J.J., see Takamori 112 (1991) 660
Arnaud d’Avitaya, F., see Andrieu 112 (19911)4 6 Bolt, R.J.. M. van der Mooren and M.T.
Ashida, M., see Ueda 112 (19915)0 7 Sebastian, Etching experiments on flux
Asom, M.T., J. Mosovsky, R.E. Leibenguth, grown potassium titanyl phosphate KTiO
J.L. Zilko and G. Cadet, Transient arsine PO, (KTP) 112 (1991) 773
generation during opening of solid source Borisov, A.G., O.P. Fedorov and V.V.
MBE chambers 112 (19915)9 7 Maslow, Growth of succinonitrile den-
Asonen, H., see Tappura 112 (1991) 27 drites in different crystallographic direc-
Assenov, R. and E.K. Polychroniadis, On the tions 112 (19914)6 3
comparative characterization of single Borle, W.N., see Bagai 112 (19914)0 2
crystalline PbTe(I) grown by vertical Borrego, J.M., see Venkatasubramanian 112 (1991) 7
Bridgman and travelling heater methods 112 (1991) 227 Bothra, S., see Venkatasubramanian 112(1991) 7
Augustus, P.D., see Kightley 112 (1991) 359 Boutellier, R., see Sun 112 (1991) 71
Bradley, R.R., see Kightley 112 (19913)5 9
Baeta Moreira, M.V., M.A. Py and E. Tuncel, Braun, R.J. and S.H. Davis, Oscillatory insta-
A correlation between surface mor- bilities in rapid directional solidification:
phology and RHEED intensity variation bifurcation theory 112 (1991) 670
for growth of GaAs by molecular beam Breuilly, L., see Muranaka 112 (19918)0 8
epitaxy 112 (1991) 14 Bronshteyn, V.L. and A.A. Chernov, Freez-
Bagai, R.K., M. Srivastava, K. Sharma and ing potentials arising on solidification of
W.N. Borle, In-situ delineation of defects dilute aqueous solutions of electrolytes 112 (19911)2 9
in ISOVPE-grown Hg, _ .Cd,Te layers 112 (19914)0 2 Burkhardt, E., see Sun 112 (1991) 71
Balk, P., see Kayser 112 (1991) 111
Ballman, A.A., see Cheng 112 (1991) 309
Bamberger, C.E., L.F. Allard, D.W. Coffey Cadet, G., see Asom 112 (1991) 597
and M.R. Bennett, Whiskers of TiN by Cadoret, R., see Chaput 112 (1991) 691
topochemical reaction 112 (1991) 47 Cao, X.Z. and A.F. Witt, Decorated disloca-
Barber, P.G., J.T. Petty and R.L. Stevens, tions in SI-GaAs as revealed by dark field
Crystal growth precursors of YBa,Cu, NIR transmission microscopy 112 (1991) 838
O,_., predicted from crystal habits by use Chang, H.S.W., see Schleich 112 (19917)3 7
of moments of momentum 112 (1991) 613 Chang, R.S.F., see Shaw 112 (1991) 731
Barnes, P.A., see Allerman 112 (1991) 583 Chaput, L., R. Cadoret and M. Mihailovic,
Baughman, R.J., Quartz crystal growth 112 (1991) 753 Experimental and theoretical study of InP
Baxter, C.S., W.M. Stobbs and J.H. Wilkie, homoepitaxy by chemical vapour deposi-
The morphology of ordered structures in tion from gaseous indium chloride and
III-V alloys: inferences from a TEM hydrogen diluted phosphine 112 (1991) 691
study 112 (19913)7 3 Cheng Gan Chao, Qian Zhi Qiang, Tang
Beaglehole, D., Surface melting of small par- Guang Kui, Song Wen Bao and Tang
ticles, and the effects of surface impurities 112 (19916)6 3 Hong Gao, Top seeded growth of
Bennett, M.R., see Bamberger 112 (1991) 47 KTiOPO, from molten tungstate solution 112 (1991) 294
842 Author index
Cheng, L.K., J.D. Bierlein, C.M. Foris and Givargizov, E.I., M.O. Kliya, V.R. Melik-
A.A. Ballman, Growth of epitaxial thin Adamyan, A.I. Grebenko, R.C. DeMattei
films in the KTiOPO, family of crystals 112 (19913)0 9 and RS. Feigelson, Artificial epitaxy
Chernov, A.A., see Bronshteyn 112 (19911)2 9 (graphoepitaxy) of proteins 112 (19917)5 8
Chernov, A.A., see Mikheev 112 (19915)9 1 Glicksman, M.E., see Rubinstein 112 (1991) 84
Chopra, R., see Bindal 112 (19913)8 6 Glicksman, M.E., see Rubinstein 112 (1991) 97
Chu, S.N.G., see McCrary 112 (1991) 39 Goodhew, P.J., see Kightley 112 (19913)5 9
Coffey, D.W., see Bamberger 112 (1991) 47 Grabmaier, B.C., see Trauth 112 (19914)5 1
Cotell, C.M., see Panish 112 (19913)4 3 Grant, M., see Weeks 112 (19912)4 4
Grebenko, A.I., see Givargizov 112 (19917)5 8
Dabringhaus, H., see Helmrich 112 (1991) 824 Green, M.A., see Healy 112 (19912)8 7
Davis, S.H., see Braun 112 (1991) 670 Goto, T., see lijima 112 (19914)6 7
DeMattei, R.C., see Givargizov 112 (1991) 758
Deymier, P.A., see Shamsuzzoha 112 (1991) 635 Hakkarainen, T., see Tappura 112 (1991) 27
Dhar, A., see Bindal 112 (1991) 386 Hamm, R.A., see Panish 112 (19913)4 3
Doi, Y., see lijima 112 (1991) 467 Hanada, T., see Kawai 112 (19917)4 5
Doyle, S.E., A.R. Gerson, K.J. Roberts, J.N. Hanssen, L.M., see Snail 112 (19916)5 1
Sherwood and T. Wroblewski, Probing Hartman, P., see Van der Voort 112 (19914)4 5
the structure of solids in a liquid environ- Hatakoshi, G., see Nishikawa 112 (19916)2 8
ment: a recent in-situ crystallisation ex-
Healy, S.A., T.L. Young and M.A. Green,
periment using high energy wavelength
Low-temperature growth of silicon on
scanning X-ray diffraction 112 (1991) 302 Si, _ Ga, by liquid phase epitaxy 112 (19912)8 7
Helmrich, R., H. Dabringhaus, H. Frey and
Eguchi, M., see Kakimoto 112 (1991) 819 H.J. Meyer, Investigation of condensation
and evaporation of alkali halide crystals
Fan, Y.D., see Tang 112 (19914)0 7 by molecular beam methods. XIII. Devel-
Fedorov, O.P., see Borisov 112 (19914)6 3 opment of two-dimensional islands on the
Fedorov, V.A., V.A. Ganshin and Yu.N. (100) surface of KCl 112 (1991) 824
Korkishko, Ion exchange in zinc selenide Hibiya, T., see Kakimoto 112 (1991) 819
crystals: the role of lattice-misfit-induced Hicks, R.F., see Liu 112 (1991) 192
stresses and dislocations 112 (19917)8 1 Higuchi, M., T. Hosokawa and S. Kimura,
Feigelson, R.S., see Givargizov 112 (19917)5 8 Growth of rutile single crystals by float-
Feng, Y.J., see Tang 112 (19914)0 7 ing zone method 112 (19913)5 4
Fiorani, D., see Leccabue 112 (19916)4 4 Hirai, T., see Suzuki 112 (19916)2 1
Foris, C.M., see Cheng 112 (19913)0 9 Hirota, Y., T. Isshiki, K. Okashita and M.
Fox, B.A., see Jansen 112 (19913)1 6 Shiojiri, High-resolution transmission
Francis, J.T., S.W. Benson and T.T. Tsotsis, electron microscopy of growth and struc-
Kinetics of the very low pressure pyroly- tures of Ag—-Te and Cu-Se crystals pro-
sis of trimethylgallium and arsine 112 (19914)7 4 duced by solid—solid reactions 112 (1991) 55
Frey, H., see Helmrich 112 (19918)2 4 Hladina, R., see Leitner 112 (19914)3 7
Frigeri, C., see Licci 112 (19916)0 6 Hobbs, A.K. and Ph. Metzener, Long-wave
Fujishiro, H., see Sakurai 112 (19911)5 3 instabilities in directional solidification
Fukuda, T., see Machida 112 (19918)3 5 with remote flow 112 (19915)3 9
Fukuoka, M., see Ueda 112 (19915)0 7 Hogan, L.M., see Shamsuzzoha 112 (19916)3 5
Furuhata, N. and A. Okamoto, Selective Hosaka, M., Synthesis of micro a-quartz
growth mechanism of GaAs in metalor- crystals by hydrothermal hot-press meth-
ganic molecular beam epitaxy 112(1991) 1 od 112 (19912)9 1
Hosokawa, T., see Higuchi 112 (19913)5 4
Ganshin, V.A., see Fedorov 112 (1991) 781 Hou Li, see Qi 112 (19915)8 0
Gao, D., A.W. Stevenson, S.W. Wilkins and Hovinen, M., see Tappura 112 (1991) 27
G.N. Pain, Anisotropic microstructure in Huang Bingrong, Su Genbo and Pan Feng,
Cd,_,Mn,Te/Cd,_,Mn,Te superlat- Growth of urea crystals with very large
tices studied by X-ray diffraction 112 (19914)8 7 cross-sectional area 112 (19917)2 9
Gencer, F. and J.S. Abell, The growth of Huang Chaoen, see Ji 112 (19912)8 3
YBa,Cu,0,_; single crystals with the aid Hunt, J.D., see Rodway 112 (19915)5 4
of a NaCl-KCI flux 112 (19913)3 7 Hunt, J.D., see Rodway 112 (19915)6 3
Gerson, A.R., see Doyle 112 (19913)0 2 Huo Yujing, see Ji 112 (19912)8 3
Author index
Igasaki, Y., H. Yamauchi and S. Okamura, Balk, Control of selective area growth of
Structural properties of In—Se thin films InP 112 (1991) 111
prepared by direct evaporation of InSe Keller, K.W., Spontaneous and preferential
chunk 112 (1991) 797 two-dimensional nucleation — a quantita-
lida, S., see Katoh 112 (1991) 368 tive analysis of growth hill observations 112 (1991) 496
Iijima, M., H. Kamemizu, N. Wakamatsu, T. Kightley, P., P.J. Goodhew, R.R. Bradley and
Goto, Y. Doi and Y. Moriwaki, Precipita- P.D. Augustus, A mechanism of misfit
tion of octacalcium phosphate at 37°C dislocation reaction for GalnAs strained
and at pH 7.4: in relation to enamel for- layers grown onto off-axis GaAs sub-
mation 112 (1991) 467 strates 112 (19913)5 9
lijima, M. and Y. Moriwaki, Lengthwise and Kimura, S., see Higuchi 112 (1991) 354
oriented growth of octacalcium phosphate Kimura, T., see Kajigaya 112 (1991) 123
on cation selective membrane in a model Klima, P., see Leitner 112 (19914)3 7
system of enamel formation 112 (19915)7 1 Kliya, M.O., see Givargizov 112 (1991) 758
Inoue, T., M. Kuriyama and H. Komatsu, Kobayashi, N., Oxygen transport under an
Growth of CuCl single crystals by the top axial magnetic field in Czochralski silicon
seeded solution growth method 112 (19915)3 1 growth (E) 112 (1991) 308
Ishikawa, M., see Nishikawa 112 (19916)2 8 Kokubun, Y., see Nishikawa 112 (19916)2 8
Isshiki, T., see Hirota 112 (1991) 55 Komatsu, H., see Inoue 112 (19915)3 1
Ito, Y., K. Kushida and H. Takeuchi, Role Korkishko, Yu.N., see Fedorov 112 (19917)8 1
of chromium sublayers in the growth of Krémaf, S., see Sdhnel 112 (19914)1 5
highly crystalline (111)-oriented gold films Kfivankova, I., see S6hnel 112 (19914)1 5
on sapphire 112 (1991) 427 Kumabe, H., see Nishimura 112 (19917)9 1
Kuriyama, M., see Inoue 112 (1991) 531
Jansen, A.N., M.E. Orazem, B.A. Fox and Kushida, K., see Ito 112 (19914)2 7
W.A. Jesser, Numerical study of the in- Kusunoki, T., C. Takenaka and K. Nakajima,
fluence of reactor design on MOCVD with LEC growth of InGaAs bulk crystal fed
a comparison to experimental data 112 (1991) 316 with a GaAs source 112 (1991) 33
Jesser, W.A., see Jansen 112 (19913)1 6
Ji Yangyang, Zhao Shuging, Huo Yujing, Larsen, C.A., see Li 112 (1991) 515
Zhang Hongwu, Li Ming and Huang Leccabue, F., R. Panizzieri, B.E. Watts, D.
Chaoen, Growth of lithium triborate Fiorani, E. Agostinelli, A. Testa and E.
(LBO) single crystal fiber by the laser- Paparazzo, Growth, thermodynamic and
heated pedestal growth method 112 (1991) 283 magneto-structural study of FeGa,O,
Juréova, M., see Séhnel 112 (1991) 415 single crystals 112 (19916)4 4
Lee, C.Y., see Wu 112 (1991) 803
Kadoiwa, K., see Nishimura 112 (1991) 791 Lee, J.W., see McCrary 112 (1991) 39
Kadota, Y., see Kajigaya 112 (1991) 123 Lee, P., see Ren 112 (1991) 587
Kagawa, M., see Suzuki 112 (19916)2 1 Leibenguth, R.E., see Asom 112 (1991) 597
Kajigaya, T., T. Kimura and Y. Kadota, Ef- Leitner, J., J. Mikulec, P. Vonka, J. Stejskal,
fect of the magnetic flux direction on R. Hladina and P. Klima, Thermody-
LEC GaAs growth under magnetic field 112 (1991) 123 namic analysis of the deposition of GaAs
Kakimoto, K., M. Eguchi and T. Hibiya, epitaxial layers prepared by the MOCVD
In-situ monitoring of dopant concentra- method 112 (19914)3 7
tion variation in a silicon melt during Li, H.D., see Tang 112 (19914)0 7
Czochralski growth 112 (1991) 819 Li Ming, see Ji 112 (19912)8 3
Kamemizu, H., see Iijima 112 (1991) 467 Li, S.H., C.A. Larsen and G.B. Stringfellow,
Katayama, S., see Yokota 112 (1991) 723 Radical reactions in pyrolysis of triethyl-
Katoh, M., S. lida, Y. Sugiia and K. arsine and diethylarsine 112 (19915)1 5
Okamoto, X-ray characterization of tung- Licci, F., H.J. Scheel and P. Tissot, De-
sten single crystals grown by secondary termination of the eutectic composition
recrystallization method 112 (1991) 368 by crystal growth and flux separation:
Kawai, M., S. Watanabe and T. Hanada, example BaCuO,—CuO, 112 (1991) 600
Molecular beam epitaxy of Bi,Sr,CuO, Licci, F., C. Frigeri and H.J. Scheel, Effect of
and Bi,Sr,Cagg5Srp;;Cu,0, ultra thin flux composition on crucible corrosion
films at 300°C 112 (1991) 745 and aluminum distribution coefficient in
Kayser, O., R. Westphalen, B. Opitz and P. YBCO single crystals 112 (19916)0 6
s44 Author index
Liu, B., A.H. McDaniel and R.F. Hicks, strate temperature into Zn-doped In
Modeling of the coupled kinetics and GaAIP grown by low-pressure MOCVD 112 (1991) 628
transport in the organometallic vapor- Nishimura, T., K. Kadoiwa, M. Miyashita,
phase epitaxy of cadmium telluride 112 (1991) 192 H. Kumabe and T. Murotani, Crack-free
Lu, K. and J.T. Wang, A micromechanism and low dislocation density GaAs-on-Si
for crystallization of amorphous alloys. I. grown by 2-reactor MOCVD system 112 (1991) 791
An in situ TEM observation 112 (1991) 525 Nishizawa, J., see Sakurai 112 (1991) 153
Lu, S.C., see Wu 112 (1991) 803
Luftman, H.S., see Panish 112 (1991) 343
Lundager Madsen, H.E., On the surface en- Okamoto, A., see Furuhata 112(1991) 1
ergy of ionic crystals 112 (19914)5 8 Okamoto, K., see Katoh 112 (19913)6 8
Okamura, S., see Igasaki 112 (19917)9 7
Okashita, K., see Hirota 112 (1991) 55
Machida, H. and T. Fukuda, Difficulties en- Opitz, B., see Kayser 112 (19911)1 1
countered during the Czochralski growth Orazem, M.E., see Jansen 112 (19913)1 6
of TiO, single crystals 112 (19918)3 5
Maslow, V.V., see Borisov 112 (19914)6 3 Pain, G.N., see Gao 112 (19914)8 7
McCrary, V.R., D.L. Van Haren, J.L. Zilko, Pan Feng, see Huang 112 (19917)2 9
J. Blaha, S.E.G. Slusky, J.W. Lee, S.N.G.
Panish, M.B., R.A. Hamm, D. Ritter, HLS.
Chu, P. Thomas and V. Swaminathan,
Luftman and C.M. Cotell, Redistribution
Low pressure MOCVD in a vertical reac-
of beryllium in InP and Gag47Ing53As
tor: growth and characterization of In
grown by hydride source molecular beam
GaAsP on (100)InP for 1.3 um lasers 112 (1991) 39
epitaxy and metalorganic molecular beam
McDaniel, A.H., see Liu 112 (19911)9 2
epitaxy 112 (19913)4 3
Melik-Adamyan, V.R., see Givargizov 112 (19917)5 8
Panizzieri, R., see Leccabue 112 (1991) 644
Metzener, Ph., see Hobbs 112 (19915)3 9
Paparazzo, E., see Leccabue 112 (19916)4 4
Meyer, H.J., see Helmrich 112 (19918)2 4
Petty, J.T., see Barber 112 (1991) 613
Mihailovic, see Chaput 112 (19916)9 1
Polychroniadis, E.K., see Assenov 112 (1991) 227
Mikheev, L.V. and A.A. Chernov, Mobility
Pu Xin, see Qi 112 (1991) 580
of a diffuse simple crystal—melt interface 112 (19915)9 1
Py, M.A., see Baeta Moreira 112 (1991) 14
Mikulec, J., see Leitner 112 (19914)3 7
Mitrovi¢, M.M. and R.I. Risti¢é, Growth rate
dispersion of small MnCl, -4H,O crys- Qi Lichang, Xuan Zhenwu, Yang Peichun,
tals. I. Growth without a magnetic field 112 (1991) 160 Pu Xin and Hou Li, Presence of core
Mitrovi¢é, M.M., Growth rate dispersion «+f particles in diamond crystals grown by
small MnCl, - 4H,0 crystals. II. Growi:: electron assisted chemical vapor deposi-
in a magnetic field 112 (19911)7 1 tion 112 (1991) 580
Miyadera, H., see Muranaka 112 (19918)0 8 Qian Zhi Qiang, see Cheng 112 (1991) 294
Miyashita, M., see Nishimura 112 (19917)9 1
Moriwaki, Y., see Iijima 112 (19914)6 7
Moriwaki, Y., see Iijima 112 (19915)7 1 Rzkennus, K., see Tappura 112 (1991) 27
Mosovsky, J., see Asom 112 (19915)9 7 Rashkovich, L.N. and B.Yu. Shekunov, Study
Muranaka, Y., H. Yamashita, H. Miyadera of the growth mechanism of L-arginine
and L. Breuilly, Synthesis of polycrystal- chloride monohydrate (LACh) crystals 112 (1991) 183
line diamond films in CO,/H, and Ren Zhifeng, M.J. Naughton, P. Lee and J.H.
CO/CO,/H, systems 112 (19918)0 8 Wang, Growth of superconducting single
Murotani, T., see Nishimura 112 (19917)9 1 crystals of T1,,Ba,Ca,,_,Cu,O, in a con-
venient way 112 (19915)8 7
Risti¢, R.I., Mitrovié 112 (19911)6 0
Nakai, H., see Yokota 112 (19917)2 3 Ritter, D., see Panish 112 (19913)4 3
Nakajima, K., see Kusunoki 112 (1991) 33 Roberts, K.J., see Doyle 112 (19913)0 2
Nanev, Chr.N., Instability of faceted crystal Rodriguez, V., see Sun 112 (1991) 71
shapes growing under diffusion control 112 (19912)3 5 Rodway, G.H. and J.D. Hunt, Thermoelec-
Naughton, M.J., see Ren 112 (19915)8 7 tric investigation of solidification of lead.
Nayar, R.K., see Bindal 112 (1991) 386 I. Pure lead 112 (1991) 554
Nishikawa, Y., M. Ishikawa, H. Sugawara, G. Rodway, G.H. and J.D. Hunt, Thermoelec-
Hatakoshi and Y. Kokubun, Anomalous tric investigation of solidification of lead.
dependence of In incorporation on sub- II. Lead alloys 112 (1991) 563
Author index 845
Rubinstein, E.R. and M.E. Glicksman, Den- Su Genbo, see Huang 112 (19917)2 9
dritic growth kinetics and structure. I. Sugawara, H., see Nishikawa 112 (19916)2 8
Pivalic acid 112 (1991) 84 Sugita, Y., see Katoh 112 (1991) 368
Rubinstein, E.R. and M.E. Glicksman, Den- Sun, B.N., R. Boutellier, Ph. Sciau, E. Burk-
dritic growth kinetics and structure. II. hardt, V. Rodriguez and H. Schmid, High
Camphene 112 (1991) 97 temperature solution growth of perovskite
Pb,CoWO, single crystals 112 (1991) 71
Suto, K., see Sakurai 112 (1991) 153
Sakurai, F., H. Fujishiro, K. Suto and J.
Suzuki, M., M. Kagawa, Y. Syono and T.
Nishizawa, ZnSe epitaxial growth by the
Hirai, Thin films of rare-earth (Y, La, Ce,
temperature difference method under
Pr, Nd, Sm) oxides formed by the spray-
controlled vapor pressure (TDM-—CVP) ICP technique 112 (19916)2 1
using Se solvent 112 (1991) 153 Swaminathan, V., see McCrary 112 (1991) 39
Satoh, K., see Yokota 112 (1991) 723 Syono, Y., see Suzuki 112 (19916)2 1
Scheel, H.J., see Licci 112 (19916)0 0
Scheel, H.J., see Licci 112 (1991) 606
Takamori, T. and J.J. Boland, On
Schleich, D.M. and H.S.W. Chang, Iron pyrite
and iron marcasite thin films prepared by pyrochlore-type bismuth platinum oxide 112 (19916)6 0
low pressure chemical vapor deposition 112 (19917)3 7 Takenaka, C., see Kusunoki 112 (1991) 33
Schmid, H., see Sun 112 (1991) 71 Takeuchi, H., see Ito 112 (1991) 427
Sciau, Ph., see Sun 112 (1991) 71 Tang Guang Kui, see Cheng 112 (1991) 294
Sebastian, M.T., see Bolt 112 (19917)7 3 Tang, H.P., J.Y. Feng, Y.D. Fan and H.D.
Li, Growth of CdTe films on GaAs by
Sebastian, P.J. and V. Sivaramakrishnan, The
ionized cluster beam epitaxy 112 (19914)0 7
growth and characterization of CdSe
x Tang Hong Gao, see Cheng 112 (1991) 294
Te, _, thin films 112 (19914)2 1
Tappura, K., T. Hakkarainen, K. Rakennus,
Shamsuzzoha, M., L.M. Hogan, D.J. Smith
M. Hovinen and H. Asonen, The in-
and P.A. Deymier, A transmission and
fluence of growth conditions on the com-
high-resolution electron microscope study
position of GalnAsP grown by gas-source
of cozonally twinned growth of eutectic
molecular beam epitaxy 112 (1991) 27
silicon in unmodified Al-Si alloys 112 (19916)3 5
Testa, A., see Leccabue 112 (19916)4 4
Sharma, K., see Bagai 112 (1991) 402
Thomas, P., see McCrary 112 (1991) 39
Shaw, L.B. and R.S.F. Chang, Rare earth
Timmons, M.L., see Venkatasubramanian 112(1991) 7
doped YLF grown by laser-heated pedes-
tal growth technique 112 (19917)3 1 Tissot, P., see Licci 112 (19916)0 0
Shekunov, B.Yu., see Rashkovich 112 (19911)8 3 Trauth, J. and B.C. Grabmaier, The shape of
Sherwood, J.N., see Doyle 112 (19913)0 2 the crystal/melt interface during the
Shiojiri, M., see Hirota 112 (1991) 55 growth of lithium niobate crystals by the
Singh, B.P., see Bindal 112 (19913)8 6 Czochralski technique 112 (1991) 451
Singhal, S.K., see Bindal 112 (19913)8 6 Tsotsis, T.T., see Francis 112 (19914)7 4
Sivaramakrishnan, V., see Sebastian 112 (19914)2 1 Tuncel, E., see Baeta Moreira 112 (1991) 14
Slusky, S.E.G., see McCrary 112 (1991) 39
Smith, D.J., see Shamsuzzoha 112 (19916)3 5 Ueda, T., see Ueda 112 (1991) 507
Snail, K.A. and L.M. Hanssen, High temper- Ueda, Y., T. Ueda, M. Fukuoka and M.
ature, high rate homoepitaxial growth of Ashida, Epitaxial growth of 2,5-distyryl-
diamond in an atmospheric pressure flame 112 (19916)5 1 pyrazine from the vapor phase 112 (1991) 507
Sdhnel, O., I. Kfivankova, S. Krémaf and M. Uwai, K., Sequential self-limiting growth of
Juréova, Gypsum crystals formed on de- CuO on MgO(100) by chemical vapor de-
composing calcium citrate 112 (1991) 415 position 112 (1991) 298
Song Wen Bao, See Cheng 112 (1991) 294
Srivastava, M., see Bagai 112 (19914)0 2 Van der Mooren, M., see Bolt 112 (1991) 773
Steininger, R. and J.H. Bilgram, A_ light Van der Voort, E. and P. Hartman, The habit
scattering study of the solid—liquid inter- of gypsum and solvent interaction 112 (1991) 445
face layer of cyclohexane crystals 112 (19912)0 1 Van Haren, D.L., see McCrary 112 (1991) 39
Stejskal, J., see Leitner 112 (19914)3 7 Van Saarloos, W., see Weeks 112 (19912)4 4
Stevens, R.L., see Barber 112 (19916)1 3 Venkatasubramanian, R., M.L. Timmons, S.
Stevenson, A.W., see Gao 112 (19914)8 7 Bothra and J.M. Borrego, Optimization of
Stobbs, W.M., see Baxter 112 (19913)7 3 the heteroepitaxy of Ge on GaAs for
Stringfellow, G.B., see Li 112 (19915)1 5 minority-carrier lifetime 112(1991) 7
846 Author index
Virzi, A., Computer modelling of heat trans- mance of the AlGaAs/InGaP single het-
fer in Czochralski silicon crystal growth 112 (1991) 699 erostructure grown by liquid-phase epi-
Vonka, P., see Leitner 112 (1991) 437 taxy 112 (1991) 803
Wakamatsu, N., see lijima 112 (19914)6 7 Xuan Zhenwuy, see Qi 112 (1991) 580
Walck, S.D., see Allerman 112 (19915)8 3 Yamashita, H., see Muranaka 112 (19918)0 8
Wang, J.H., see Ren 112 (19915)8 7 Yamauchi, H., see Igasaki 112 (19917)9 7
Wang, J.T., see Lu 112 (19915)2 5 Yang Peichun, see Qi 112 (19915)8 0
Watanabe, S., see Kawai 112 (19917)4 5 Yang, Y.C., see Wu 112 (19918)0 3
Watts, B.E., see Leccabue 112 (19916)4 4
Yokota, K., H. Nakai, K. Satoh and S.
Weeks, J.D., W. van Saarloos and M. Grant,
Katayama, Segregation coefficients and
Stability and shapes of cellular profiles in
activation of indium in cadmium telluride
directional solidification: expansion and
matching methods 112 (19912)4 4 grown from tellurium-rich melt by the
Westphalen, R., see Kayser 112 (19911)1 1 Bridgman technique 112 (1991) 723
Wilkie, J.H., see Baxter 112 (19913)7 3 Young, T.L., see Healy 112 (1991) 287
Wilkins, S.W., see Gao 112 (19914)8 7 Zhang Hongwu, see Ji 112 (1991) 283
Witt, A.F., see Cao 112 (19918)3 8 Zhao Shuging, see Ji 112 (1991) 283
Wroblewski, T., see Doyle 112 (19913)0 2 Zilko, J.L., see McCrary 112 (1991) 39
Wu, M.C., S.C. Lu, C.Y. Lee and Y.C. Yang, Zilko, J.L., see Asom 112 (1991) 597
Interface abruptness and LED perfor-
Journal of Crystal Growth 112 (1991) 847-850
North-Holland
Subject index
Adsorption 1, 146, 192, 298, 421, 445 by electrical methods 7, 111, 153, 227, 343, 402, 554, 563,
Alloys 525, 539, 563, 635 587, 606, 723, 803
Aluminum by electroluminescence 803
— gallium arsenide 803 by electron diffraction 507, 525, 635
— organic 628 by electron microscopy 1, 47, 55, 84, 111, 227, 235, 287, 291,
— silicon alloys 635 337, 359, 373, 386, 415, 421, 427, 474, 496, 507, 525, 583,
Apparatus 621, 635, 651, 660, 731, 758, 803, 808
for thin film growth by ellipsometry 146
— by liquid phase epitaxy by emission 808
— — by temperature difference method, under controlled by infrared microscopy 838
vapor pressure by infrared spectroscopy 402
— — — of zinc selenide 153 by infrared thermography 699
— by uniform radial flow epitaxy by interferometry 183, 235
— — of III-V compounds 583 by light scattering 201
for miscellaneous purposes by magnetic properties 337, 587, 644
— reaction kinetics 474 by mass spectrometry 474, 515
— undercooling 554 by microwave lifetime 7
L-Arginine chloride monohydrate 183 by optical microscopy 1, 14, 33, 71, 153, 294, 337, 354, 402,
Arsenic 463, 487, 531, 651, 737, 753, 758
— organic 575 by optical properties 283, 294
Arsine 597 by particle size distribution analysis 415
by photoluminescence 14, 39, 723, 791
Barium by Raman spectroscopy 651, 808
— oxide/ copper oxide eutectic 600, 606 by reflectance 368
Bismuth by reflection high energy electron diffraction 14, 146, 407,
— platinum oxide 660 427, 745, 781
— strontium calcium cuprate 745 by second harmonic generation 283, 294
— strontium cuprate 745 by secondary ion mass spectrometry 343
Boron by thermal analysis 525, 600
— nitride 386 by X-ray methods 7, 39, 55, 71, 123, 153, 287, 291, 298, 302,
309, 337, 368, 386, 421, 487, 525, 587, 606, 621, 628, 644,
651, 660, 723, 737, 745, 773, 781, 797, 808, 819
Cadmium 235
— by X-ray photoemission spectroscopy 407, 421, 745, 808
manganese telluride 487
Chromium
mercury telluride 402
— (III) oxide 427
organic 192
Computer simulation 699, 824
selenide telluride 421
Constitutional supercooling 244
telluride 192, 407, 723
Convection 84, 97, 451, 539, 835
Calcium
Copper
— hydroxyapatite 467, 571
— chloride 531
— phosphates 467, 571
— oxide 298, 600, 613
— sulphate dihydrate 415, 445
— selenide 55
Camphene 97
Cyclohexane 201
Cellular growth 463, 670
Characterization methods
— by absorption spectroscopy 7 Dendritic growth 84, 97, 129, 463
— by Auger electron spectroscopy 39, 644, 745, 803 Devices 287, 309, 803
— by cathodoluminescence 153 Diamond 580, 651, 808
— by differential thermal analysis 600 Diffusional control 183, 201, 235, 781, 824
848 Subject index
Dislocations 33, 39, 227, 354, 359, 402, 496, 773, 781, 791 — cobalt tungstate 71
Distribution coefficient 129, 160, 171, 244, 563, 606, 723 — telluride 227
Dopants 153, 343, 628, 731, 819 Lithium
— niobate 451
Etching — triborate 283
— chemical 227, 294, 354, 402, 773, 791, 838
Eutectic growth 386, 635
Manganese
— chloride 160, 171
Finite element method 699
Mathematical model 192, 244, 515
Melt growth technique
Gallium 146
— by Bridgman-Stockbarger method
arsenide 1, 14, 123, 316, 437, 474, 791, 838
— — of cadmium telluride 723
indium arsenide 343, 359
— — of lead telluride 227
indium arsenide phosphide 27
by Czochralski method
indium phosphide 373
— of gallium arsenide 123
organic 1, 359, 474, 628
— of indium gallium arsenide 33
Germanium 7
— of lithium niobate 451
Gold 427
— of silicon 308, 699, 819
Grain boundary 227, 354
— of titanium dioxide 835
Gypsum 415, 445
by floating zone method
— of lead telluride 227
Heat flow control 699, 835
— of titanium dioxide 354
Heterojunction 583, 803
by ion-exchange technique
— of zinc selenide 781
Ice 129 by laser-heated pedesial growth
Impurity 129, 227, 244, 308, 663, 723 — of lithium triborate 283
Indium — of yttrium lithium fluoride 731
gallium aluminum phosphide 628
by melt spinning
gallium arsenide 33, 583 — of nickel phosphide 525
gallium arsenide phosphide 39
by uniaxial solidification
gallium phosphide 39 — of alloys 539
organic 359, 628 — of succinonitrile 463
phosphide 111, 343, 583, 691 by zone melting
selenide 797 — of cyclohexane 201
Interface 39, 129, 201, 359, 445, 451, 458, 463, 539, 554, 670, — of lead 554
699, 803, 819, 835
— of lead alloys 563
Ionic crystals 458 — of lead telluride 227
Iron
theory of 591, 670
— disulphide 737 Mercury
— gallate 644
— cadmium telluride 402
— pentacarbonyl 737
Morphological stability 129, 235, 244, 539, 670
Morphology of growth 7, 14, 39, 47, 71, 84, 97, 123, 153, 291,
Kinetics 294, 337, 373, 386, 445, 463, 487, 496, 507, 571, 613, 635,
of decomposition 415, 474 651, 660, 670, 773, 824, 835
of freezing hydrolysis 129
of growth 7, 27, 84, 97, 111, 129, 146, 160, 171, 192, 201,
294, 302, 309, 316, 407, 445, 467, 496, 515, 531, 554, 571, Nickel
591, 628, 651, 670, 691, 737, 753, 824 — phosphide 525
of interface control 407, 451, 670 Nonlinear optics 183
of ledge diffusion 824 Nucleation 291, 407, 496, 580, 758, 808
of nucleation 146, 407 Numbers
of step formation 183 — Grashof 192, 451
— Peclet 84, 97, 244
Lasers 39, 283, 731 Prandtl 192
Lattice mismatch 33, 39, 309, 628, 781, 803 Rayleigh 201
Lead 554 Reynolds 192
— alloys 563 Schmidt 539
Subject index
Organic crystals 84, 97, 201, 302, 463, 507, 729, 758 Spinel 644
Statistical mechanics, molecular theory 591
Perfection of crystals 71, 123, 153, 227, 354, 368, 402, 407, 421, Stefan problem or moving boundary problem 539, 699
487, 531, 587, 635, 791, 808, 838 Step 183, 496, 651
Periodic bond chain theory 613 Strain 359
Phase diagrams 129, 244, 531, 600, 663 Succinonitrile 463
Phenomenological theory 7, 235 Sulphur
Pivalic acid 84 — organic 737
Potassium Superconductivity 337, 587, 606, 613
— bromide 235 — bulk 337, 587, 606, 613
— chloride 824 — characterization 587, 606
— dihydrogen phosphate 235 — crystal chemistry 337, 587
— titanyl phosphate 294, 309, 773 — high T, 337, 587, 606, 613
Proteins 758 — stoichiometry 337, 587, 606
Purification of materials 84, 97, 227, 531, 808 Supercooling, supersaturation 84, 97, 160, 171, 183, 287, 487,
496, 663, 729, 803
Quartz 291, 753 Superlattices 359, 791
Surface energy, determination of 84, 97, 458
Rare earth Surface processes 129, 474
— oxides 621 Surface structure 146, 183, 445, 487, 591, 644, 663, 781
Rutile 354
Segregation 723 Tellurium
Silicon 287, 308, 635, 699 — organic 192
— dioxide 291 Thallium
— germanium 287 — barium calcium cuprate 587
Silver 235 Thermodynamics 437, 458, 467, 644, 663, 691, 781
— telluride 55 Thin film growth
Sodium by graphoepitaxy
— chloride 496 — of proteins 758
Solar cells 421 by liquid phase epitaxy
Solid growth technique — of aluminum gallium arsenide 803
— by polymorphic transformation — of potassium titanyl phosphate 309
— — of boron nitride 386 — of silicon 287
— by recrystallization — of silicon germanium 287
— — of tungsten 368 — of zinc selenide 153
— by topochemical reaction by metalorganic molecular beam epitaxy
— — of titanium nitride 47 — of gallium arsenide 1
Solution growth technique — of gallium indium arsenide 343
by electrocrystallization — of indium phosphide 343
— of silver 235 by molecular beam epitaxy
by flux method of bismuth strontium calcium cuprate 745
- of copper(I) chloride 531 of bismuth strontium cuprate 745
— of lead cobalt tungstate 71 of gallium 146
— of potassium titanyl phosphate 294, 773 of gallium arsenide 14, 597
— of yttrium barium cuprate 337, 606 - — of gallium indium arsenide 343
by hydrothermal growth of gallium indium arsenide phosphide 27
— of quartz 291, 753 of indium phosphide 343
by low temperature method by vapor phase epitaxy
of L-arginine chloride monohydrate 183 — through chemical vapor deposition
of calcium hydroxyapatite 467, 571 of copper oxide 298
of calcium phosphates 467, 571 of diamond 580, 808
of gypsum 415 of gallium indium phosphide 373
of manganese chloride 160, 171 of indium phosphide 691
of potassium bromide 235 of III-V compounds 583
of potassium dihydrogen phosphate 235 through combustion flame
of urea 729 — of diamond 651
theory of 613 through evaporation and condensation
Subjeci index
of cadmium selenide telluride 421 Tungsten 368
of cadmium telluride 407 Twinning 337, 635
of chromium(III) oxide 427
of copper selenide 55
Urea 729
of gold 427
of indium selenide 797
of mercury cadmium telluride 402 Vapor growth technique
of organic crystals 507 — by chemical transport
of rare earth oxides 621 — — of iron gallate 644
of silver telluride 55 — by evaporation and condensation
through metalorganic chemical vapor deposition — — of cadmium 235
of cadmium manganese telluride 487 — — of zinc 235
of cadmium telluride 192
of gallium arsenide 316, 437, 474, 791
of gallium indium arsenide 359 Whisker growth
of indium gallium aluminum phosphide 628 — of titanium nitride 47
of indium gallium arsenide phosphide 39
of indium phosphide 111
Yttrium
of iron disulphide 737
— barium cuprate 337, 613
theory of 192, 316, 437
— lithium fluoride 731
Three-— five (III-V) compounds 373, 583
Titanium
— dioxide 354, 835 Zinc 235
— nitride 47 — selenide 153, 781
